专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120044234A1 PLASMA DISPLAY DEVICE AND DRIVING APPARATUS THEREOF 失效
标题翻译：等离子体显示装置及其驱动装置
公开(公告)号：US20120044234A1
公开(公告)日：2012-02-23
申请号：US12965811
申请日：2010-12-10
申请人： Suk-Ki Kim , Sang-Hun Park , Kwan-Il Oh , Sang-Chul Kim
发明人： Suk-Ki Kim , Sang-Hun Park , Kwan-Il Oh , Sang-Chul Kim
IPC分类号： G09G5/00 , G09G3/28
CPC分类号： G09G3/2965 , G09G3/294 , G09G2330/021 , G09G2330/028
摘要： In a plasma display device, a secondary coil of a transformer is connected across a panel capacitor formed by a scan electrode and a sustain electrode performing a sustain discharge. The plasma display device uses resonance between a secondary coil of a transformer and a panel capacitor to apply a sustain discharge pulse to a scan electrode and a sustain electrode in a sustain period.
摘要翻译：在等离子体显示装置中，变压器的次级线圈跨越由扫描电极和执行维持放电的维持电极形成的面板电容器连接。等离子体显示装置使用变压器的次级线圈与面板电容器之间的谐振，以在维持期间向扫描电极和维持电极施加维持放电脉冲。

2. 发明授权

US08405578B2 Plasma display device and driving apparatus thereof 失效
标题翻译：等离子体显示装置及其驱动装置
公开(公告)号：US08405578B2
公开(公告)日：2013-03-26
申请号：US12965811
申请日：2010-12-10
申请人： Suk-Ki Kim , Sang-Hun Park , Kwan-Il Oh , Sang-Chul Kim
发明人： Suk-Ki Kim , Sang-Hun Park , Kwan-Il Oh , Sang-Chul Kim
IPC分类号： G09G3/28
CPC分类号： G09G3/2965 , G09G3/294 , G09G2330/021 , G09G2330/028
摘要： In a plasma display device, a secondary coil of a transformer is connected across a panel capacitor formed by a scan electrode and a sustain electrode performing a sustain discharge. The plasma display device uses resonance between a secondary coil of a transformer and a panel capacitor to apply a sustain discharge pulse to a scan electrode and a sustain electrode in a sustain period.
摘要翻译：在等离子体显示装置中，变压器的次级线圈跨越由扫描电极和执行维持放电的维持电极形成的面板电容器连接。等离子体显示装置使用变压器的次级线圈与面板电容器之间的谐振，以在维持期间向扫描电极和维持电极施加维持放电脉冲。

3. 发明申请

US20090001584A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090001584A1
公开(公告)日：2009-01-01
申请号：US12142923
申请日：2008-06-20
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76805 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device that may include at least one of the following steps: Forming a lower metal wiring on and/or over a semiconductor substrate. Forming an interlayer insulating film having a damascene hole on and/or over the semiconductor substrate and the lower metal wiring. Forming an anti-diffusion film on and/or over the exposed lower metal wiring below the damascene hole and/or on side surfaces of the damascene hole. Selectively removing the anti-diffusion film formed on and/or over the exposed lower metal wiring at the bottom of the damascene hole using a plasma process that uses an inert gas.
摘要翻译：一种制造半导体器件的方法，其可以包括以下步骤中的至少一个：在半导体衬底上和/或上方形成下部金属布线。在半导体衬底和/或下部金属布线上形成具有镶嵌孔的层间绝缘膜。在镶嵌孔下面和/或在镶嵌孔的侧面上的暴露的下金属布线上和/或上方形成防扩散膜。使用惰性气体的等离子体工艺，选择性地去除在镶嵌孔底部露出的下部金属布线上和/或上方形成的抗扩散膜。

4. 发明申请

US20080284023A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BOAC/COA 审中-公开
标题翻译：半导体器件及制造BOAC / COA的方法
公开(公告)号：US20080284023A1
公开(公告)日：2008-11-20
申请号：US12120943
申请日：2008-05-15
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L24/12 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0381 , H01L2224/03912 , H01L2224/0401 , H01L2224/056 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/11912 , H01L2224/13147 , H01L2224/16 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/3025 , Y10T428/12528 , H01L2924/00014 , H01L2224/13099
摘要： A BOAC/COA of a semiconductor device is manufactured by forming a conductive pad over a semiconductor device, forming a passivation oxide film over the semiconductor device including the conductive pad, forming an oxide film over the entire surface of the conductive pad and the passivation oxide film, forming an oxide film pattern defining a bond pad region on the conductive pad, sequentially forming a barrier film and a metal seed layer over the oxide film pattern, the passivation oxide film and the conductive pad, forming a metal layer over the metal seed layer, planarizing the metal layer exposing the oxide film pattern and portions of the barrier film and the metal seed layer, and removing the oxide film pattern by an etching process.
摘要翻译：通过在半导体器件上形成导电焊盘来制造半导体器件的BOAC / COA，在包括导电焊盘的半导体器件上形成钝化氧化膜，在导电焊盘的整个表面上形成氧化膜，并且钝化氧化物在所述导电焊盘上形成限定焊盘区域的氧化膜图案，在所述氧化膜图案上依次形成阻挡膜和金属籽晶层，所述钝化氧化物膜和所述导电焊盘在所述金属种子上形成金属层使暴露氧化膜图案的金属层和阻挡膜和金属种子层的部分平坦化，并通过蚀刻工艺除去氧化膜图案。

5. 发明申请

US20090160012A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090160012A1
公开(公告)日：2009-06-25
申请号：US12334508
申请日：2008-12-14
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L27/0688
摘要： Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a first device, a silicon epitaxial layer formed on and/or over the first device, a second device formed on and/or over the silicon epitaxial layer, and a connection via formed through the silicon epitaxial layer, which may electrically interconnect the first device and the second device. According to embodiments, a method for fabricating a semiconductor device may include forming a first device, forming a silicon epitaxial layer on and/or over the first device, forming a connection via through the silicon epitaxial layer, and forming a second device on and/or over the silicon epitaxial layer such that the second device may be electrically connected to the connection via.
摘要翻译：实施例涉及一种半导体器件及其制造方法。根据实施例，半导体器件可以包括第一器件，形成在第一器件上和/或上面的硅外延层，形成在硅外延层上和/或之上的第二器件，以及通过硅外延层形成的连接通孔层，其可以电连接第一器件和第二器件。根据实施例，用于制造半导体器件的方法可以包括形成第一器件，在第一器件上和/或第一器件上形成硅外延层，通过硅外延层形成连接，并在其上形成第二器件和/ 或在硅外延层上方，使得第二器件可以电连接到连接通孔。

6. 发明授权

US07414597B2 Plasma display panel driving circuit 失效
标题翻译：等离子显示面板驱动电路
公开(公告)号：US07414597B2
公开(公告)日：2008-08-19
申请号：US10769786
申请日：2004-02-03
申请人： Hak-Ki Choi , Sang-Chul Kim , Seung-Pil Mun , Kwang-Ho Jin , Sun-Kyung Ahn
发明人： Hak-Ki Choi , Sang-Chul Kim , Seung-Pil Mun , Kwang-Ho Jin , Sun-Kyung Ahn
IPC分类号： G09G3/28
CPC分类号： G09G3/296 , G09G3/2927 , G09G2310/066 , G09G2320/041
摘要： A PDP driving circuit for a stable operation of a ramp pulse. A capacitor having a temperature characteristic opposite to a temperature characteristic of a part coupled to a switch that operates as a constant current source for generation of a ramp pulse is arranged in the driving circuit for generating a ramp pulse. The ramp pulse linearly increases or decreases a panel voltage of the PDP with respect to time. Parts having opposite temperature characteristics are coupled in parallel to control variation of a gradient of the ramp pulse so that values of the parts may not be varied depending on the temperature changes. Thus, stable operation of the ramp pulse is obtained.
摘要翻译：用于斜坡脉冲的稳定操作的PDP驱动电路。具有与作为用于产生斜坡脉冲的恒定电流源工作的开关的部分的温度特性相反的温度特性的电容器被布置在用于产生斜坡脉冲的驱动电路中。斜坡脉冲相对于时间线性地增加或减小PDP的面板电压。具有相反温度特性的部件并联耦合以控制斜坡脉冲的梯度的变化，使得部件的值可能不会随温度变化而变化。因此，获得斜坡脉冲的稳定操作。

7. 发明申请

US20080057695A1 SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体及其制造方法
公开(公告)号：US20080057695A1
公开(公告)日：2008-03-06
申请号：US11846897
申请日：2007-08-29
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L24/24 , H01L24/82 , H01L25/0655 , H01L25/18 , H01L2224/24227 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/14
摘要： A semiconductor device includes a substrate formed with a predetermined trench, a plurality of devices fixed into the trench, an etch stop layer on an entire surface of the substrate including the devices while selectively exposing the devices, an interlayer dielectric layer on the etch stop layer, in which the interlayer dielectric layer includes a predetermined via hole and a predetermined trench, and a via plug and a metal line formed on the interlayer dielectric layer while filling the via hole and the trench.
摘要翻译：半导体器件包括形成有预定沟槽的衬底，固定到沟槽中的多个器件，在包括器件的衬底的整个表面上的蚀刻停止层，同时选择性地暴露器件;蚀刻停止层上的层间介电层其中层间介电层包括预定的通孔和预定沟槽，以及在填充通孔和沟槽的同时在层间电介质层上形成的通孔塞和金属线。

8. 发明授权

US06208082B1 Method for driving surface discharge type plasma display panel 有权
标题翻译：用于驱动表面放电型等离子体显示面板的方法
公开(公告)号：US06208082B1
公开(公告)日：2001-03-27
申请号：US09464438
申请日：1999-12-16
申请人： Sang-Chul Kim , Eun-gi Heo
发明人： Sang-Chul Kim , Eun-gi Heo
IPC分类号： G09G310
CPC分类号： G09G3/2983 , G09G3/299 , G09G2310/0218 , G09G2310/0224
摘要： A method for driving a surface discharge type plasma display panel (PDP) having a matrix display form is provided. The surface discharge type PDP is driven by a progressive driving method such that non-discharge regions are removed by combining common and scanning electrodes traversing neighboring discharge cells or two neighboring scanning electrodes into one. While the scanning electrodes traversing neighboring discharge cells are reduced to one to be used in common, sequential scanning is allowed. Thus, the number of driver circuits can be reduced. Also, since the distance between electrodes of the respective lines can be reduced, a high-precision PDP can be achieved by reducing a line pitch. Also, the ratio of the area occupied by display electrodes in a unit emission region is increased and the range in which a surface discharge occurs is extended, thereby improving the luminance.
摘要翻译：提供一种用于驱动具有矩阵显示形式的表面放电型等离子体显示面板（PDP）的方法。表面放电型PDP由逐行驱动方法驱动，通过将通过相邻放电单元或两个相邻扫描电极的公共扫描电极和扫描电极组合成一个来去除非放电区域。当穿过相邻放电单元的扫描电极被减少到一个共同使用时，允许顺序扫描。因此，可以减少驱动器电路的数量。此外，由于可以减少各行的电极之间的距离，所以可以通过减少线间距来实现高精度的PDP。此外，单位发射区域中显示电极占据的面积的比例增加，并且发生表面放电的范围延长，从而提高了亮度。

9. 发明授权

US5936355A Method for driving a plasma display to enhance brightness 失效
标题翻译：用于驱动等离子体显示器以增强亮度的方法
公开(公告)号：US5936355A
公开(公告)日：1999-08-10
申请号：US713081
申请日：1996-09-12
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01J15/04 , G09G3/20 , G09G3/282 , G09G3/291 , G09G3/293 , G09G3/294 , G09G3/28
CPC分类号： G09G3/2022 , G09G3/288 , G09G2320/0626
摘要： A method for driving a plasma display having a plurality of cathodes and anodes arranged in a matrix structure and a plurality of discharge cells formed at intersecting portions of the cathodes and anodes. Each cathode is addressed and subsequently a sustaining pulse for a predetermined time during a sustaining period is applied to each cathode so that the sustaining period is increased. The method maintains a discharge-sustaining time by adding a predetermined sustaining pulse during a writing phase after addressing all cathodes, thereby enhancing the brightness of the discharge cell.
摘要翻译：一种用于驱动等离子体显示器的方法，其具有以矩阵结构排列的多个阴极和阳极以及形成在阴极和阳极的交叉部分处的多个放电单元。寻址每个阴极，随后在维持周期期间将预定时间的维持脉冲施加到每个阴极，使得维持周期增加。该方法通过在寻址所有阴极之后的写入阶段期间添加预定的维持脉冲来维持放电维持时间，从而提高放电单元的亮度。

10. 发明授权

US09008190B2 Apparatus for processing images and method thereof 有权
标题翻译：图像处理装置及其方法
公开(公告)号：US09008190B2
公开(公告)日：2015-04-14
申请号：US12651730
申请日：2010-01-04
申请人： Kun-Sik Lee , Yoon-Jung Kim , Hae-Jin Bae , Gyu-Seung Kim , Sang-Chul Kim , Sang-Kil Park , Jae-Kyung Lee , Jin-Gyeong Kim , Tae-Il Chung
发明人： Kun-Sik Lee , Yoon-Jung Kim , Hae-Jin Bae , Gyu-Seung Kim , Sang-Chul Kim , Sang-Kil Park , Jae-Kyung Lee , Jin-Gyeong Kim , Tae-Il Chung
IPC分类号： H04N7/18 , H04N21/4402 , H04N5/445 , H04N21/482 , H04N21/426 , H04N21/475
CPC分类号： H04N21/440263 , H04N5/445 , H04N21/4263 , H04N21/4755 , H04N21/482
摘要： An apparatus for processing images may include a de-multiplexer that receives a data stream and de-multiplexes a video signal and channel information from the data stream, a first decoder that provides a decoded video signal, a thumbnail generator coupled to the first decoder to generate at least one of a still picture thumbnail or a moving picture thumbnail based on the decoded video signal, and an encoder coupled to the thumbnail generator and the de-multiplexer. The encoder encodes the thumbnail with the channel information to provide a thumbnail data stream to provide thumbnails of moving pictures and/or still pictures on a display.
摘要翻译：用于处理图像的装置可以包括解复用器，其接收数据流并且从数据流解码多路复用视频信号和信道信息，提供解码视频信号的第一解码器，耦合到第一解码器的缩略图生成器基于解码的视频信号生成静止图像缩略图或运动图像缩略图中的至少一个，以及耦合到缩略图生成器和解复用器的编码器。编码器利用频道信息对缩略图进行编码以提供缩略图数据流，以在显示器上提供运动图像和/或静止图像的缩略图。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式