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1. 发明授权

US08871518B2 Monoclonal antibody for analyzing high-molecular weight adiponectin and utilization of same 有权
标题翻译：用于分析高分子量脂联素的单克隆抗体及其利用
公开(公告)号：US08871518B2
公开(公告)日：2014-10-28
申请号：US13319054
申请日：2010-05-06
申请人： Suguru Akamatsu , Kiyonori Katsuragi , Hideaki Onishi , Midori Abe , Toru Hadama , Ayako Nishimura , Mio Ooguchi
发明人： Suguru Akamatsu , Kiyonori Katsuragi , Hideaki Onishi , Midori Abe , Toru Hadama , Ayako Nishimura , Mio Ooguchi
IPC分类号： C07K16/26 , G01N33/74 , G01N33/543 , G01N33/82
CPC分类号： G01N33/74 , C07K16/26 , G01N33/543 , G01N33/54313 , G01N33/82 , G01N2800/042
摘要： A monoclonal antibody that does not show a crossreactivity with middle-molecular weight (MMW) adiponectin and specifically reacts with high-molecular weight (HMW) adiponectin alone is disclosed. The monoclonal antibody of the present invention can be produced by using HMW adiponectin as an antigen. According to the monoclonal antibody of the present invention, a convenient, high-accurate, and versatile reagent for analyzing HMW adiponectin can be provided.
摘要翻译：公开了不显示与中等分子量（MMW）脂联素交联反应并且单独与高分子量（HMW）脂联素特异性反应的单克隆抗体。本发明的单克隆抗体可以通过使用HMW脂联素作为抗原来制备。根据本发明的单克隆抗体，可以提供用于分析HMW脂联素的方便，高精度和通用的试剂。

2. 发明申请

US20120052596A1 NOVEL MONOCLONAL ANTIBODY FOR ANALYZING HIGH-MOLECULAR WEIGHT ADIPONECTIN AND UTILIZATION OF SAME 有权
标题翻译：用于分析高分子量ADIPONECTIN的新型单克隆抗体及其应用
公开(公告)号：US20120052596A1
公开(公告)日：2012-03-01
申请号：US13319054
申请日：2010-05-06
申请人： Suguru Akamatsu , Kiyonori Katsuragi , Hideaki Onishi , Midori Abe , Toru Hadama , Ayako Nishimura , Mio Ooguchi
发明人： Suguru Akamatsu , Kiyonori Katsuragi , Hideaki Onishi , Midori Abe , Toru Hadama , Ayako Nishimura , Mio Ooguchi
IPC分类号： G01N33/53 , C07K16/26
CPC分类号： G01N33/74 , C07K16/26 , G01N33/543 , G01N33/54313 , G01N33/82 , G01N2800/042
摘要： A monoclonal antibody that does not show a crossreactivity with middle-molecular weight (MMW) adiponectin and specifically reacts with high-molecular weight (HMW) adiponectin alone is disclosed. The monoclonal antibody of the present invention can be produced by using HMW adiponectin as an antigen. According to the monoclonal antibody of the present invention, a convenient, high-accurate, and versatile reagent for analyzing HMW adiponectin can be provided.
摘要翻译：公开了不显示与中等分子量（MMW）脂联素交联反应并且单独与高分子量（HMW）脂联素特异性反应的单克隆抗体。本发明的单克隆抗体可以通过使用HMW脂联素作为抗原来制备。根据本发明的单克隆抗体，可以提供用于分析HMW脂联素的方便，高精度和通用的试剂。

3. 发明申请

US20120037861A1 FLAME RETARDANT COMPOSITION FOR FLAMMABLE PLASTIC MATERIALS COMPRISING 2,4,6-TRIS(2,4,6-TRIBROMOPHENOXY)-1,3,5-TRIAZINE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：包含2,4,6-三（2,4,6-三溴苯氧基）-1,3,5-三嗪的易燃塑料材料的阻燃组合物及其制造方法
公开(公告)号：US20120037861A1
公开(公告)日：2012-02-16
申请号：US13265628
申请日：2009-05-01
申请人： Hideaki Onishi , Michael Peled
发明人： Hideaki Onishi , Michael Peled
IPC分类号： C09K21/10
CPC分类号： C09K21/10 , C07D251/30 , C08K3/016 , C08K5/0066 , C08K5/3492 , C08K13/02
摘要： A flame retardant composition for flammable plastic materials and a method for producing the same are disclosed. The flame retardant composition comprises 2,4,6-tris(2,4,6-tribromophenoxy)-1,3,5-triazine that contains 1 to 1000 ppm of a metal species of a water-insoluble polyvalent metal compound selected from the group consisting of oxide, hydroxide, carbonate, phosphate, sulfate and silicate present in the particles of 2,4,6-tris(2,4,6-tribromophenoxy)-1,3,5-triazine. The flame retardant composition is produced by reacting an alkali metal salt of 2,4,6-tribromophenol and cyanuric chloride in the presence of said water-insoluble polyvalent metal compound.
摘要翻译：公开了一种可燃性塑料材料的阻燃组合物及其制造方法。阻燃组合物包含2,4,6-三（2,4,6-三溴苯氧基）-1,3,5-三嗪，其含有1至1000ppm的金属种类的非水溶性多价金属化合物，其选自存在于2,4,6-三（2,4,6-三溴苯氧基）-1,3,5-三嗪颗粒中的氧化物，氢氧化物，碳酸盐，磷酸盐，硫酸盐和硅酸盐组成的组。所述阻燃组合物通过在所述水不溶性多价金属化合物的存在下使2,4,6-三溴苯酚的碱金属盐和氰尿酰氯反应来制备。

4. 发明申请

US20060047049A1 Flame retardant compositions for flammable plastics and flame retarded plastic compositions containing the same 审中-公开
标题翻译：用于易燃塑料的阻燃组合物和含有该组合物的阻燃塑料组合物
公开(公告)号：US20060047049A1
公开(公告)日：2006-03-02
申请号：US11216066
申请日：2005-09-01
申请人： Hideaki Onishi , Makoto Teramoto
发明人： Hideaki Onishi , Makoto Teramoto
IPC分类号： C08K5/03
CPC分类号： C08K5/0066 , C08K5/0091 , C08K5/01 , C08K5/02
摘要： A flame retardant composition for rendering flammable plastics flame retardant is provided. The composition comprises a brominated flame retardant, a free-radical generator selected from 2,3-dimethyl-2,3-diphenyl-butane or its homologs, and a phthalocyanine or naphthalocyanine complex with a metal of groups 7 to group 10 of the IUPAC periodic chart. The quantity of the brominated flame retardant may be saved when incorporating into flammable plastic materials in conjunct with the free-radical generator and the phathalocyanine or naphthalocyanine complex of the above type.
摘要翻译：提供了一种用于提炼易燃塑料阻燃剂的阻燃组合物。该组合物包含溴化阻燃剂，选自2,3-二甲基-2,3-二苯基 - 丁烷或其同系物的自由基发生剂，以及IUPAC的第7族至第10族金属的酞菁或萘酞菁络合物周期图。当与自由基发生剂和上述类型的酞菁或萘酞菁复合物结合时，可以节省溴化阻燃剂的量。

5. 发明授权

US6160293A Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers 失效
标题翻译：具有深硅化物接触层的二分之一微米绝缘体上的MOS场效应晶体管
公开(公告)号：US6160293A
公开(公告)日：2000-12-12
申请号：US176914
申请日：1998-10-22
申请人： Hideaki Onishi , Kiyotaka Imai
发明人： Hideaki Onishi , Kiyotaka Imai
IPC分类号： H01L29/45 , H01L29/786 , H01L29/00
CPC分类号： H01L29/78612 , H01L29/458
摘要： A semiconductor thin film structure includes source/drain regions and a channel region positioned between the source/drain regions. The semiconductor thin film structure extends directly on and in contact with a surface of an insulation region. At least one of the source/drain regions includes a semiconductor material region extending directly over and in contact with the surface of the insulation region and a refractory metal silicide layer extending directly on and in contact with the semiconductor material region. The refractory metal silicide layer has a first thickness which is equal to or thicker than a half of a second thickness of the channel region, thereby suppressing any substantive kink effect. The first thickness of the refractory metal silicide layer is also thinner than a third thickness of the source/drain regions, so that at least a majority part of a bottom surface of the refractory metal silicide layer has a junction interface with the semiconductor material region of the source/drain regions, thereby reducing a parasitic resistance of the source and drain regions.
摘要翻译：半导体薄膜结构包括源极/漏极区域和位于源极/漏极区域之间的沟道区域。半导体薄膜结构直接在绝缘区域的表面上进行接触。源极/漏极区域中的至少一个包括直接在绝缘区域的表面上和与绝缘区域的表面接触的半导体材料区域和直接在半导体材料区域上接触并且与半导体材料区域接触的难熔金属硅化物层。难熔金属硅化物层的第一厚度等于或大于通道区域的第二厚度的一半，从而抑制任何实质的扭结效应。难熔金属硅化物层的第一厚度也比源极/漏极区域的第三厚度薄，使得难熔金属硅化物层的底表面的至少大部分部分具有与半导体材料区域的接合界面源极/漏极区域，从而减小源极和漏极区域的寄生电阻。

6. 发明授权

US09487707B2 Flame retardant composition for flammable plastic materials comprising 2,4,6-tris(2,4,6-tribromophenoxy)-1,3,5-triazine and process for producing the same 有权
公开(公告)号：US09487707B2
公开(公告)日：2016-11-08
申请号：US13265628
申请日：2009-05-01
申请人： Hideaki Onishi , Michael Peled
发明人： Hideaki Onishi , Michael Peled
IPC分类号： C09K21/10 , C07D251/30 , C08K3/00 , C08K5/00 , C08K5/3492 , C08K13/02
CPC分类号： C09K21/10 , C07D251/30 , C08K3/016 , C08K5/0066 , C08K5/3492 , C08K13/02
摘要： A flame retardant composition for flammable plastic materials and a method for producing the same are disclosed. The flame retardant composition comprises 2,4,6-tris(2,4,6-tribromophenoxy)-1,3,5-triazine that contains 1 to 1000 ppm of a metal species of a water-insoluble polyvalent metal compound selected from the group consisting of oxide, hydroxide, carbonate, phosphate, sulfate and silicate present in the particles of 2,4,6-tris(2,4,6-tribromophenoxy)-1,3,5-triazine. The flame retardant composition is produced by reacting an alkali metal salt of 2,4,6-tribromophenol and cyanuric chloride in the presence of said water-insoluble polyvalent metal compound.

7. 发明申请

US20150225540A1 POLYLACTIC ACID RESIN COMPOSITION AND RESIN MOLDED ARTICLE THEREOF 有权
标题翻译：聚酰胺树脂组合物和树脂模塑制品
公开(公告)号：US20150225540A1
公开(公告)日：2015-08-13
申请号：US14603175
申请日：2015-01-22
申请人： Hideaki Onishi , Ken Morishita
发明人： Hideaki Onishi , Ken Morishita
IPC分类号： C08K5/20 , C08K5/11
CPC分类号： C08K5/20 , C08K5/09 , C08K5/103 , C08K5/11 , C08L67/04 , C08L71/02
摘要： Provided are a polylactic acid resin composition excellent in impact resistance, migration resistance, and heat resistance, and excellent in productivity at the time of the mold forming thereof, and a resin molded article thereof. The polylactic acid resin composition includes a polylactic acid; a reaction product of at least one of a polyol and a polyol dehydration condensate, an alkylene oxide mainly formed of ethylene oxide, and a fatty acid having 12 to 24 carbon atoms; and a fatty acid amide.
摘要翻译：本发明提供耐冲击性，耐迁移性，耐热性优异，成型时的生产率优异的聚乳酸树脂组合物及其树脂成形品。聚乳酸树脂组合物包括聚乳酸; 多元醇和多元醇脱水缩合物，主要由环氧乙烷形成的氧化烯和碳原子数为12〜24的脂肪酸中的至少一种的反应产物; 和脂肪酸酰胺。

8. 发明申请

US20150197621A1 POLYLACTIC ACID RESIN COMPOSITION AND RESIN MOLDED ARTICLE THEREOF 有权
标题翻译：聚酰胺树脂组合物和树脂模塑制品
公开(公告)号：US20150197621A1
公开(公告)日：2015-07-16
申请号：US14603159
申请日：2015-01-22
申请人： Hideaki Onishi , Ken Morishita
发明人： Hideaki Onishi , Ken Morishita
IPC分类号： C08K5/20 , C08K5/1535
CPC分类号： C08K5/20 , C08K5/103 , C08K5/151 , C08K5/1535 , C08L67/04
摘要： Provided are a polylactic acid resin composition excellent in transparency, heat resistance, and migration resistance, and excellent in productivity at the time of the mold forming thereof, and a resin molded article thereof. The polylactic acid resin composition includes a polylactic acid; a reaction product of at least one selected from the group consisting of sorbitol, mannitol, and dehydration condensates thereof, an alkylene oxide mainly formed of ethylene oxide, and a fatty acid having 8 to 24 carbon atoms; and a fatty acid amide having a hydroxyl group.
摘要翻译：提供透明性，耐热性和耐迁移性优异，成型时的生产率优异的聚乳酸树脂组合物及其树脂成型品。聚乳酸树脂组合物包括聚乳酸; 选自山梨糖醇，甘露糖醇及其脱水缩合物中的至少一种的反应产物，主要由环氧乙烷形成的烯化氧和碳原子数为8〜24的脂肪酸; 和具有羟基的脂肪酸酰胺。

9. 发明申请

US20070246861A1 FLAME-RETARDED STYRENE-BASED PLASTIC COMPOSITIONS 审中-公开
标题翻译：阻燃的基于苯乙烯的塑料组合物
公开(公告)号：US20070246861A1
公开(公告)日：2007-10-25
申请号：US11767875
申请日：2007-06-25
申请人： Hideaki Onishi , Hideto Kondo
发明人： Hideaki Onishi , Hideto Kondo
IPC分类号： B29C41/46
CPC分类号： C08K5/03 , C08K3/2279 , C08K2201/014 , C08L25/02
摘要： The present invention relates to a flame-retarded plastic composition comprising (A) a styrene-based plastic material, (B) a brominated aromatic compound having a melting point from 200° C. to 260° C. in which all bromine atoms are attached to the aromatic ring, (C) a bromine-containing organic compound having at least one 2,3-dibromopropyl group, and optionally antimony trioxide.
摘要翻译：本发明涉及一种阻燃塑料组合物，其包含（A）苯乙烯基塑料材料，（B）熔点为200℃至260℃的溴化芳族化合物，其中所有溴原子连接（C）具有至少一个2,3-二溴丙基的含溴有机化合物和任选的三氧化锑。

10. 发明授权

US5856693A Semiconductor integrated circuit device containing MOS protection circuit 失效
标题翻译：包含MOS保护电路的半导体集成电路器件
公开(公告)号：US5856693A
公开(公告)日：1999-01-05
申请号：US516929
申请日：1995-08-18
申请人： Hideaki Onishi
发明人： Hideaki Onishi
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/088 , H01L29/78 , H01L23/62
CPC分类号： H01L29/7833 , H01L27/0266 , H01L2924/0002
摘要： A semiconductor integrated circuit device containing a protection MOSFET. This MOSFET has source and drain regions and a channel region formed in a semiconductor substrate. The channel region is disposed between the source and drain regions. The source region is made of a first lightly doped region and a first heavily doped region. The first lightly doped region is adjacent to a first end of the channel region. The drain region is made of a second lightly doped region and a second heavily doped region. The second lightly doped region is adjacent to a second end of the channel region. The second end of the channel region is positioned on an opposite side to that of the first end. A distance from the second end of the channel region to an opposing end of the second heavily doped region is longer than a distance from the first end of the channel region to an opposing end of the first heavily doped region. Even if the snapback voltage of the MOSFET fluctuates from place to place in the same MOSFET, the snapback phenomenon tends to occur within the entire drain region almost simultaneously, enabling to improve the ESD breakdown resistance of the protection MOSFET.
摘要翻译：一种包含保护MOSFET的半导体集成电路器件。该MOSFET具有源极和漏极区域以及形成在半导体衬底中的沟道区域。沟道区域设置在源区和漏区之间。源极区域由第一轻掺杂区域和第一重掺杂区域制成。第一轻掺杂区域与沟道区域的第一端相邻。漏极区域由第二轻掺杂区域和第二重掺杂区域制成。第二轻掺杂区域与沟道区域的第二端相邻。通道区域的第二端位于与第一端相反的一侧。从沟道区的第二端到第二重掺杂区的相对端的距离比从沟道区的第一端到第一重掺杂区的相对端的距离长。即使MOSFET的快速恢复电压从同一个MOSFET的位置发生波动，几乎同时也会在整个漏极区域内发生快速反应现象，从而能够提高保护MOSFET的ESD击穿电阻。

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