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    • 7. 发明授权
    • Brominated polyphenylene oxide and flame retardant employing the brominated polyphenylene oxide
    • 溴化聚苯醚和阻燃剂采用溴化聚苯醚
    • US06864343B2
    • 2005-03-08
    • US10457261
    • 2003-06-09
    • Hideaki Onishi
    • Hideaki Onishi
    • C09K21/08C08G65/38C08G65/48C08L101/00C09K21/14C08G65/80
    • C09K21/14C08G65/485
    • A brominated polyphenylene oxide having a molecular skeleton obtained by condensing tribromophenols and satisfying the requirements: (A) its 20 wt. % solution in chloroform has an absorbance at 600 nm of not larger than 0.6; (B) when 50 ml of ion-exchanged water is added to its 1.00 g/30 ml solution in dioxane, the resulting solution has an electroconductivity of not larger than 10 μS/cm measured at 25° C.; and (C) when a mixture comprised of 20% by weight of the brominated polyphenylene oxide and 80% by weight of triphenyl phosphate is heated at 280° C. for 20 minutes, the halide ion increase therein is not larger than 10 μmols per gram of the brominated polyphenylene oxide, is used as a flame retardant. When it is added to resin, the resin moldings are excellent in its flame retardancy, electric properties, physical properties, thermal stability and appearance (color hue), and they do not corrode molds.
    • 具有分子骨架的溴化聚苯醚,其通过使三溴酚缩合并满足以下要求:(A)其20重量% 氯仿中的%溶液在600nm处的吸光度不大于0.6; (B)当向其1.00g / 30ml二恶烷溶液中加入50ml离子交换水时,得到的溶液在25℃下测得的电导率不大于10μS/ cm。 和(C)当将由20重量%的溴化聚苯醚和80重量%的磷酸三苯酯组成的混合物在280℃下加热20分钟时,其中的卤离子增加量不大于10克莫尔/克 的溴化聚苯醚,用作阻燃剂。 当添加到树脂中时,树脂模制品的阻燃性,电性能,物理性能,热稳定性和外观(色调)优异,并且不会腐蚀模具。
    • 8. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US6150202A
    • 2000-11-21
    • US90937
    • 1998-06-05
    • Kiyotaka ImaiHideaki Onishi
    • Kiyotaka ImaiHideaki Onishi
    • H01L27/092H01L21/336H01L21/762H01L21/8238H01L21/84H01L29/786
    • H01L21/76264H01L21/84
    • Disclosed is a method for fabricating semiconductor device, which has the steps of: forming a device separation region to section a first device forming region and a second device forming region on a substrate with a SOI structure; forming gate oxide film on the first and second device forming regions; introducing first conductivity type impurity and second conductivity type impurity into the first and second device forming regions to form a channel region of a first channel type transistor by the first conductivity type impurity and to form a source-drain region of the first channel type transistor by the second conductivity type impurity on at least the first device forming region; and introducing the first conductivity type impurity and the second conductivity type impurity selectively into the second device forming region to form a channel region and a source-drain region of a second channel type transistor on the second device forming region.
    • 本发明公开了一种制造半导体器件的方法,其特征在于包括以下步骤:在具有SOI结构的衬底上形成第一器件形成区域和第二器件形成区域的器件分离区域; 在第一和第二器件形成区上形成栅氧化膜; 将第一导电型杂质和第二导电型杂质引入到第一和第二器件形成区域中,以通过第一导电类型杂质形成第一沟道型晶体管的沟道区,并通过第一导电型杂质形成第一沟道型晶体管的源极 - 漏极区 至少在第一器件形成区域上的第二导电型杂质; 并且将第一导电类型杂质和第二导电类型杂质选择性地引入到第二器件形成区域中,以在第二器件形成区域上形成沟道区域和第二沟道型晶体管的源极 - 漏极区域。
    • 9. 发明授权
    • Semiconductor device with an improved body contact hole structure
    • 具有改善的体接触孔结构的半导体器件
    • US5929490A
    • 1999-07-27
    • US61864
    • 1998-04-17
    • Hideaki Onishi
    • Hideaki Onishi
    • H01L21/336H01L29/786H01L27/01
    • H01L29/66772H01L29/78615
    • The present invention provides a contact hole structure in a field effect transistor having a semiconductor layer extending over an insulation region, a control electrode provided on an insulation film on the semiconductor layer, and an inter-layer insulator covering the semiconductor layer and the control electrode. The semiconductor layer further comprises a drain region of a first conductivity type extending on the insulation region, an intermediate region of a second conductivity type extending on the insulation region and also being in contact with the drain region so that the intermediate region is positioned under the control electrode, and a laminated region in contact with the intermediate region so that the laminated region is separated by the intermediate region from the drain region. The laminated region comprises a base layer of the second conductivity type on the insulation region and a source region of the first conductivity type laminated on the base layer. The contact hole structure comprises at least a first contact hole filled with a first contact layer and formed in the inter-layer insulator so that the first contact hole reaches a top surface of the source region, at least a second contact hole filled with a second contact layer and formed in the inter-layer insulator so that the second contact hole penetrates through the source region to reach the base layer, and an electrical isolation layer provided on an inner wall of at least a part of the second contact hole so that the second contact layer within the second contact hole is electrically isolated by the electrical isolation layer from the source region.
    • 本发明提供一种具有在绝缘区域上延伸的半导体层的场效应晶体管中的接触孔结构,设置在半导体层上的绝缘膜上的控制电极和覆盖半导体层和控制电极的层间绝缘体 。 半导体层还包括在绝缘区域上延伸的第一导电类型的漏极区域,在绝缘区域上延伸并且还与漏极区域接触的第二导电类型的中间区域,使得中间区域位于 控制电极和与中间区域接触的层叠区域,使得层叠区域被中间区域与漏极区域分离。 层叠区域包括在绝缘区域上具有第二导电类型的基底层和层叠在基底层上的第一导电类型的源极区域。 接触孔结构至少包括填充有第一接触层并形成在层间绝缘体中的第一接触孔,使得第一接触孔到达源极区的顶表面,至少填充有第二接触孔的第二接触孔 接触层,并形成在层间绝缘体中,使得第二接触孔穿过源极区域到达基底层;以及电绝缘层,设置在第二接触孔的至少一部分的内壁上,使得 第二接触孔内的第二接触层通过电隔离层与源极区域电隔离。