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1. 发明申请

US20090067188A1 LIGHT SOURCE 审中-公开
标题翻译：光源
公开(公告)号：US20090067188A1
公开(公告)日：2009-03-12
申请号：US12242134
申请日：2008-09-30
申请人： Sugio Wako , Atsushi Koyama , Hiroshi Matsuura , Takeshi Takagi , Satoru Abe , Akira Fujisaki
发明人： Sugio Wako , Atsushi Koyama , Hiroshi Matsuura , Takeshi Takagi , Satoru Abe , Akira Fujisaki
IPC分类号： G01S1/00
CPC分类号： H01S3/09415 , G02B6/264 , G02B6/29358 , G02B6/29362 , G02B6/29398 , G02B6/4213 , G02B6/4215 , H01S3/06708 , H01S3/06712 , H01S3/08022 , H01S3/1028 , H01S3/109 , H01S3/1618
摘要： A first optical waveguide guides a pumping light emitted from a semiconductor laser. A second optical waveguide absorbs the pumping light and emits a spontaneous emission light having a wavelength longer than that of the pumping light. A third optical waveguide guides a light output from the second optical waveguide to outside. A wavelength selecting element is provided between the second optical waveguide and the third optical waveguide, across which a resonator is formed between the semiconductor laser side and an output side to outside. A wavelength of a laser light emitted from the resonator is set by controlling length of the second optical waveguide.
摘要翻译：第一光波导引导从半导体激光器发射的泵浦光。第二光波导吸收泵浦光并发射具有比泵浦光的波长更长的波长的自发发射光。第三光波导将从第二光波导的光输出引导到外部。波长选择元件设置在第二光波导和第三光波导之间，在半导体激光器侧和输出侧至外部之间形成谐振器。通过控制第二光波导的长度来设定从谐振器发射的激光的波长。

2. 发明授权

US07801186B2 Light source 失效
标题翻译：光源
公开(公告)号：US07801186B2
公开(公告)日：2010-09-21
申请号：US11952647
申请日：2007-12-07
申请人： Sugio Wako , Atsushi Koyama , Xiongfei Zhang , Hiroshi Matsuura , Satoru Abe , Takeshi Takagi
发明人： Sugio Wako , Atsushi Koyama , Xiongfei Zhang , Hiroshi Matsuura , Satoru Abe , Takeshi Takagi
IPC分类号： H01S3/30
CPC分类号： H01S3/09415 , G01N2201/06113 , G02B6/29317 , G02B6/29358 , H01S3/06708 , H01S3/0675 , H01S3/08036 , H01S3/1062 , H01S3/1618
摘要： A spatial coupling provided between an amplified-light waveguide and an output-light waveguide includes a wavelength selecting element that selectively transmits a light having a desired wavelength band out of a spontaneous emission light generated in the amplified-light waveguide and a lens unit that couples the spontaneous emission light to the wavelength selecting unit. An input-side light reflecting unit provided between a semiconductor pumping laser and the amplified-light waveguide and an output-side light reflecting unit formed on an output side of the spatial coupling unit form a laser resonator.
摘要翻译：提供在放大光波导和输出光波导之间的空间耦合包括波长选择元件，其选择性地透射在放大光波导中产生的自发发射光中具有期望波长带的光;以及透镜单元，其耦合对波长选择单元的自发发射光。设置在半导体泵浦激光器和放大光波导之间的输入侧光反射单元和形成在空间耦合单元的输出侧的输出侧光反射单元形成激光谐振器。

3. 发明授权

US06909506B2 Stokes parameter measurement device and method 失效
标题翻译：斯托克斯参数测量装置及方法
公开(公告)号：US06909506B2
公开(公告)日：2005-06-21
申请号：US10347842
申请日：2003-01-16
申请人： Takeshi Takagi , Kazuhiro Ikeda , Tatsuya Hatano , Hiroshi Matsuura
发明人： Takeshi Takagi , Kazuhiro Ikeda , Tatsuya Hatano , Hiroshi Matsuura
IPC分类号： G01J4/00
CPC分类号： G01J4/00
摘要： An object is to accurately measure the Stokes parameters, without the occurrence of polarization fluctuations or PDL during the splitting of the incident light. When the incident light is made incident on a first-stage prism, the light is split into two first splitting light rays. Next, the first split light rays are respectively incident on a pair of prisms of a second stage. Each of the pair of first split light rays is split into two rays by a second-stage prism, to obtain four second split light rays.
摘要翻译：目的是精确测量斯托克斯参数，而不会在入射光分裂期间出现极化波动或PDL。当入射光入射在第一级棱镜上时，光被分成两个第一分裂光线。接下来，第一分裂光线分别入射到第二级的一对棱镜上。一对第一分裂光线中的每一个被第二级棱镜分成两束，以获得四条第二分裂光线。

4. 发明授权

US09142289B2 Method for driving variable resistance element, and nonvolatile memory device 有权
标题翻译：用于驱动可变电阻元件的方法和非易失性存储器件
公开(公告)号：US09142289B2
公开(公告)日：2015-09-22
申请号：US13883075
申请日：2012-06-11
申请人： Takeshi Takagi , Koji Katayama
发明人： Takeshi Takagi , Koji Katayama
IPC分类号： G11C11/21 , G11C13/00
CPC分类号： G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/009 , G11C2013/0092 , G11C2213/15 , G11C2213/32
摘要： A driving method for driving a variable resistance element and a nonvolatile memory device, which achieves stable storage operation. In a low resistance write process, a low resistance writing voltage pulse having the negative polarity is applied once to a variable resistance layer included in a variable resistance element while in a high resistance write process, a high resistance writing voltage pulse having the positive polarity is applied more than twice to the same variable resistance layer. Here, when a voltage value of one of the high resistance writing voltage pulses is VH1 and a voltage value of the other high resistance writing voltage pulse applied subsequently is VH2, VH1>VH2 is satisfied.
摘要翻译：用于驱动可变电阻元件和非易失性存储器件的驱动方法，其实现稳定的存储操作。在低电阻写入处理中，具有负极性的低电阻写入电压脉冲在包括在可变电阻元件中的可变电阻层上施加一次，而在高电阻写入处理中，具有正极性的高电阻写入电压脉冲是施加两倍以上的同一可变电阻层。这里，当高电阻写入电压脉冲之一的电压值为VH1，随后施加的另一个高电阻写入电压脉冲的电压值为VH2时，满足VH1> VH2。

5. 发明授权

US08796660B2 Nonvolatile memory element comprising a resistance variable element and a diode 有权
标题翻译：非易失性存储元件包括电阻可变元件和二极管
公开(公告)号：US08796660B2
公开(公告)日：2014-08-05
申请号：US12375881
申请日：2007-09-21
申请人： Takeshi Takagi , Takumi Mikawa
发明人： Takeshi Takagi , Takumi Mikawa
IPC分类号： H01L29/02 , H01L47/00 , H01L29/04 , H01L29/06 , H01L29/08 , H01L31/0352 , H01L45/00 , H01L27/24 , H01L27/10 , H01L21/00 , G11C11/00
CPC分类号： H01L45/04 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1683
摘要： A nonvolatile memory element (20) of the present invention comprises a resistance variable element (14) and a diode (18) which are formed on a substrate (10) such that the resistance variable element (14) has a resistance variable layer (11) sandwiched between a lower electrode (12) and an upper electrode (13), and the diode (18) which is connected in series with the resistance variable element (14) in the laminating direction and has an insulating layer or semiconductor layer (15) sandwiched between a first electrode (16) at the lower side and a second electrode (17) at the upper side. The resistance variable layer (11) is embedded in a first contact hole (21) formed on the lower electrode (12). A first area (22) where insulating layer or semiconductor layer (15) of the diode (18) is in contact with a first electrode (16) of the diode (18) is larger than at least one of a second area (23) where the resistance variable layer (11) is in contact with the upper electrode (13) and a third area (24) where the resistance variable layer (11) is in contact with the lower electrode (12).
摘要翻译：本发明的非易失性存储元件（20）包括形成在基板（10）上的电阻可变元件（14）和二极管（18），使得电阻可变元件（14）具有电阻变化层（11 ）和位于下电极（12）和上电极（13）之间的二极管（18），以及与电阻可变元件（14）在层叠方向上串联连接并具有绝缘层或半导体层（15）的二极管）夹在下侧的第一电极（16）和上侧的第二电极（17）之间。电阻变化层（11）嵌入形成在下电极（12）上的第一接触孔（21）中。二极管（18）的绝缘层或半导体层（15）与二极管（18）的第一电极（16）接触的第一区域（22）大于第二区域（23）中的至少一个，其中电阻变化层（11）与上电极（13）接触，电阻变化层（11）与下电极（12）接触的第三区域（24）。

6. 发明授权

US08712702B2 Measuring apparatus for measuring a physical property of a sample 有权
标题翻译：用于测量样品的物理性质的测量装置
公开(公告)号：US08712702B2
公开(公告)日：2014-04-29
申请号：US13167585
申请日：2011-06-23
申请人： Takeshi Takagi , Koji Okumura , Tatsuo Kamata
发明人： Takeshi Takagi , Koji Okumura , Tatsuo Kamata
IPC分类号： G06F19/00 , G01N1/10
CPC分类号： G01N1/38 , B01L3/502715 , B01L2200/10 , B01L2300/0654 , B01L2300/0816 , B01L2300/087 , B01L2300/0877 , B01L2300/0883 , B01L2300/0887 , B01L2400/0406 , G01N27/3271 , G01N2021/054 , G01N2035/1018
摘要： A measuring apparatus for measuring a predetermined physical property of a liquid measuring sample comprises a preparing unit in which a plurality of materials including at least a liquid material are mixed; a supply route which supplies the liquid material to the preparing unit; a withdrawing unit which withdraws the measuring sample from the preparing unit into the supply route, the measuring sample being prepared to contain the liquid material supplied to the preparing unit via the supply route; and a measuring unit which measures the predetermined physical property of the measuring sample withdrawn into the supply route by the withdrawing unit.
摘要翻译：用于测量液体测量样品的预定物理性能的测量装置包括其中混合至少包含液体材料的多种材料的制备单元; 将液体材料供给到制备单元的供给路径; 所述取出单元将所述测量样品从所述准备单元抽出到所述供给路径中，所述测量样品准备容纳经由所述供给路径供给到所述准备单元的液体材料; 以及测量单元，其测量由所述抽出单元抽出到所述供给路径中的所述测量样本的预定物理属性。

7. 发明授权

US08565004B2 Nonvolatile memory device and method for programming the same 有权
标题翻译：非易失性存储器件及其编程方法
公开(公告)号：US08565004B2
公开(公告)日：2013-10-22
申请号：US13379463
申请日：2011-06-28
申请人： Mitsuteru Iijima , Takeshi Takagi , Koji Katayama
发明人： Mitsuteru Iijima , Takeshi Takagi , Koji Katayama
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C11/5685 , G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2213/72 , G11C2213/74 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells (11) (S101); a step of changing the resistance value of a load resistor (121) to a second resistance value smaller than a first resistance value (S103); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor (121) having the second resistance value, a variable resistance element (105) included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S104).
摘要翻译：根据本发明的非易失性存储器件的编程方法包括从多个存储单元（11）中检测过低电阻单元的步骤（S101）; 将负载电阻器（121）的电阻值改变为小于第一电阻值的第二电阻值的步骤（S103）; 以及通过对包括过低电阻单元的串联电路和具有第二电阻值的负载电阻器（121）施加电压脉冲，使包含在过低电阻单元中的可变电阻元件（105）移位到具有大于第一低电阻状态的电阻值的第二高电阻状态（S104）。

8. 发明授权

US08553446B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element 有权
标题翻译：非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
公开(公告)号：US08553446B2
公开(公告)日：2013-10-08
申请号：US13567646
申请日：2012-08-06
申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
发明人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8
摘要翻译：本发明的非易失性存储元件包括第一电极（103），第二电极（108）介于第一电极（103）和第二电极（107）之间的电阻变化层（107），其被配置为响应于施加在电极（103）和（108）之间的电信号可逆地切换电阻值，，并且电阻变化层（107）具有至少多层结构，其中具有表示为HfO x（0.9 @ x @ 1.6）的组成的第一含铪层和具有表达的组成的第二含铪层因为HfOy（1.8

9. 发明申请

US20130223131A1 METHOD FOR DRIVING VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：驱动可变电阻元件的方法和非易失性存储器件
公开(公告)号：US20130223131A1
公开(公告)日：2013-08-29
申请号：US13883075
申请日：2012-06-11
申请人： Takeshi Takagi , Koji Katayama
发明人： Takeshi Takagi , Koji Katayama
IPC分类号： G11C13/00
CPC分类号： G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/009 , G11C2013/0092 , G11C2213/15 , G11C2213/32
摘要： A driving method for driving a variable resistance element and a nonvolatile memory device, which achieves stable storage operation. In a low resistance write process, a low resistance writing voltage pulse having the negative polarity is applied once to a variable resistance layer included in a variable resistance element while in a high resistance write process, a high resistance writing voltage pulse having the positive polarity is applied more than twice to the same variable resistance layer. Here, when a voltage value of one of the high resistance writing voltage pulses is VH1 and a voltage value of the other high resistance writing voltage pulse applied subsequently is VH2, VH1>VH2 is satisfied.
摘要翻译：用于驱动可变电阻元件和非易失性存储器件的驱动方法，其实现稳定的存储操作。在低电阻写入处理中，具有负极性的低电阻写入电压脉冲在包括在可变电阻元件中的可变电阻层上施加一次，而在高电阻写入处理中，具有正极性的高电阻写入电压脉冲是施加两倍以上的同一可变电阻层。这里，当高电阻写入电压脉冲之一的电压值为VH1，随后施加的另一个高电阻写入电压脉冲的电压值为VH2时，满足VH1> VH2。

10. 发明授权

US08486788B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08486788B2
公开(公告)日：2013-07-16
申请号：US13162310
申请日：2011-06-16
申请人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
发明人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L21/823431 , H01L27/0886 , H01L29/66795
摘要： A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
摘要翻译：一种半导体器件包括：形成沟槽的半导体衬底; 源极区域和漏极区域，每个源极区域和漏极区域被埋在沟槽中并且包含相同导电类型的杂质; 掩埋在沟槽中并设置在源区和漏区之间的半导体FIN; 设置在半导体FIN的侧表面上的栅极绝缘膜以及半导体FIN的上表面; 以及形成在栅极绝缘膜上的栅电极。

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