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    • 1. 发明授权
    • Method to form copper interconnects by adding an aluminum layer to the copper diffusion barrier
    • 通过向铜扩散阻挡层添加铝层来形成铜互连的方法
    • US06740580B1
    • 2004-05-25
    • US09389633
    • 1999-09-03
    • Subhash GuptaChyi S. ChernMei Sheng Zhou
    • Subhash GuptaChyi S. ChernMei Sheng Zhou
    • H01L214763
    • H01L21/76846H01L21/76873H01L21/76874H01L23/53238H01L2924/0002H01L2924/00
    • A method to form copper interconnects is described. The method may be used to form single or dual damascene interconnects. The addition of an aluminum barrier layer to the conventional barrier layer creates a superior barrier to copper diffusion. A substrate layer is provided. A dielectric layer is deposited overlying the substrate layer. The dielectric layer patterned to form interconnect trenches. An optional titanium adhesion layer may be deposited. An aluminum barrier layer is deposited overlying the interior surfaces of the trenches. A second barrier layer, comprising for instance titanium and titanium nitride, is deposited overlying the aluminum barrier layer. A copper layer is deposited overlying the second barrier layer and filling the interconnect trenches. The copper layer, the second barrier layer, and the aluminum barrier layer are polished down to the top surface of the dielectric layer to define the copper interconnects, and complete the fabrication of the integrated circuit device.
    • 描述形成铜互连的方法。 该方法可以用于形成单镶嵌或双镶嵌互连。 向常规阻挡层添加铝阻挡层产生对铜扩散的优异屏障。 提供基底层。 沉积在基底层上的电介质层。 图案化的电介质层形成互连沟槽。 可以沉积可选的钛粘合层。 覆盖在沟槽的内表面上的铝阻挡层被沉积。 包含例如钛和氮化钛的第二阻挡层沉积在铝阻挡层上。 沉积铜层,覆盖第二阻挡层并填充互连沟槽。 铜层,第二阻挡层和铝阻挡层被抛光到介电层的顶表面以限定铜互连,并且完成集成电路器件的制造。