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1. 发明申请

US20060210467A1 Producing a stable catalyst for nanotube growth 审中-公开
标题翻译：生产稳定的纳米管生长催化剂
公开(公告)号：US20060210467A1
公开(公告)日：2006-09-21
申请号：US11082437
申请日：2005-03-17
申请人： Steven Smith , Bernard Coll , Jaime Quintero , Yi Wei
发明人： Steven Smith , Bernard Coll , Jaime Quintero , Yi Wei
IPC分类号： D01F9/12
CPC分类号： D01F9/127 , B82Y30/00 , D01F9/1272
摘要： A process (40) is provided for preparing a catalyst (20). A catalyst (20) is formed over a substrate (12). A gas (24) comprising hydrogen and carbon is applied to the catalyst (20), wherein a carbon seeding layer (26) is formed on the catalyst (20). Carbon nanotubes (28) may then be grown from the catalyst (20) having the carbon seeding layer thereon (26).
摘要翻译：提供了一种制备催化剂（20）的方法（40）。催化剂（20）形成在衬底（12）上。将包含氢和碳的气体（24）施加到催化剂（20）上，其中在催化剂（20）上形成碳接种层（26）。然后可以在其上具有碳籽晶层的催化剂（20）（26）上生长碳纳米管（28）。

2. 发明申请

US20060134329A1 Method of forming a porous metal catalyst on a substrate for nanotube growth 失效
标题翻译：在纳米管生长用基材上形成多孔金属催化剂的方法
公开(公告)号：US20060134329A1
公开(公告)日：2006-06-22
申请号：US11016406
申请日：2004-12-17
申请人： Yi Wei , Jeffrey Baker , Bernard Coll , Steven Smith
发明人： Yi Wei , Jeffrey Baker , Bernard Coll , Steven Smith
IPC分类号： C23C16/00 , D01F9/12 , B05D5/12 , B05D3/10
CPC分类号： D01F9/1272 , B01J23/755 , B01J37/0238 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01J9/025 , H01J2201/30469
摘要： A method is provided for forming a porous metal catalyst (44) on a substrate (42) for nanotube (84) growth in an emissive display. The method comprises depositing a metal (44) onto a surface of a substrate (12) at an angle (Θ) to the surface, depositing a metal catalyst (72) onto the metal (44), and forming nanotubes (84) on the metal catalyst (72).
摘要翻译：提供了一种在发射显示器中用于在纳米管（84）生长的衬底（42）上形成多孔金属催化剂（44）的方法。该方法包括以与该表面成角度（θ）将金属（44）沉积到基底（12）的表面上，在金属（44）上沉积金属催化剂（72），并在金属（44）上形成纳米管金属催化剂（72）。

3. 发明申请

US20050079650A1 Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication 有权
标题翻译：包括用于改善有机层的粘附性的无定形碳层的装置及其制造方法
公开(公告)号：US20050079650A1
公开(公告)日：2005-04-14
申请号：US10892693
申请日：2004-07-16
申请人： David Mancini , Jaime Quintero , Doug Resnick , Steven Smith
发明人： David Mancini , Jaime Quintero , Doug Resnick , Steven Smith
IPC分类号： G03F7/09 , H01L20060101 , H01L21/00 , H01L23/48 , H01L23/52 , H01L29/22 , H01L29/40
CPC分类号： G03F7/094 , B82Y10/00 , G03F7/09
摘要： A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.
摘要翻译：包括用于改善有机层的粘合性的无定形碳层和制造方法的新型装置，例如半导体装置，微流体装置，表面声波装置，印模模板等。该器件包括具有覆盖在衬底表面上的表面，无定形碳层和覆盖衬底表面的低表面能材料层的衬底。该器件通过使用等离子体增强化学气相沉积（PECVD）或溅射提供具有表面的衬底，沉积低表面能材料层和覆盖邻近低表面能材料层的衬底的表面的无定形碳层而形成。

4. 发明申请

US20060024970A1 Method for preparing a semiconductor substrate surface for semiconductor device fabrication 有权
公开(公告)号：US20060024970A1
公开(公告)日：2006-02-02
申请号：US10901589
申请日：2004-07-29
申请人： Steven Smith , Diana Convey , Andy Hooper , Yi Wei
发明人： Steven Smith , Diana Convey , Andy Hooper , Yi Wei
IPC分类号： H01L21/461
CPC分类号： H01L21/02052 , H01L21/02046 , Y10S438/906
摘要： A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe. The semiconductor substrate (20) is cleaned using a first oxygen plasma process (14) to remove foreign matter (30) from the surface (28) of the substrate (20). The substrate surface (28) is next immersed in a hydrochloric acid solution (16) to remove additional foreign matter (30) from the surface (28) of the substrate (20). The immersion step is followed by a second oxygen plasma etch process (18), passivate the surface with a passivation layer (34), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

5. 发明申请

US20100068828A1 METHOD OF FORMING A STRUCTURE HAVING A GIANT RESISTANCE ANISOTROPY OR LOW-K DIELECTRIC 审中-公开
标题翻译：形成具有抗电偶性或低K电介质结构的方法
公开(公告)号：US20100068828A1
公开(公告)日：2010-03-18
申请号：US11584078
申请日：2006-10-20
申请人： Shawn Thomas , Steven Smith , Yi Wei
发明人： Shawn Thomas , Steven Smith , Yi Wei
IPC分类号： H01L21/3205
CPC分类号： B82Y30/00 , B82Y40/00 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/14 , H01L45/144 , H01L45/148
摘要： A method is provided involving the growth of carbon nanotubes to provide giant resistance anisotropy or a low-k dielectric. The method comprises growing a plurality of one-dimensional nanostructures (18) orthogonal to a first conductive layer (14). A dielectric material (22, 32, 60) is formed covering the plurality of one-dimensional nanostructures and then etched to remove a portion of the dielectric material (22, 32, 60) to expose the ends (24, 34, 68) of the one-dimensional nanostructures (18). A second conductive layer (26, 36, 84) is formed over the dielectric material (22, 32, 60) to make contact with the ends (24, 34, 68) of the one-dimensional nanostructures (18). One or both of the first (14) and second (26, 36, 84) layers may be patterned for accessing individual or groups of the one-dimensional nanostructures (18). In another exemplary embodiment, the one-dimensional nanostructures (18) may be removed prior to forming the second layer (84), thereby creating a high-k dielectric layer (32) between the first and second layers (14, 84).
摘要翻译：提供了一种涉及碳纳米管生长以提供巨大电阻各向异性或低k电介质的方法。该方法包括生长与第一导电层（14）正交的多个一维纳米结构（18）。形成覆盖多个一维纳米结构的电介质材料（22,32,60），然后蚀刻以去除电介质材料（22,32,60）的一部分以暴露端部（24,34,68）的端部一维纳米结构（18）。在电介质材料（22,32,60）之上形成第二导电层（26,36,84）以与一维纳米结构（18）的端部（24,34,68）接触。第一（14）和第二（26,36,84）层中的一个或两个可以被图案化以访问一维纳米结构（18）的单个或一组。在另一示例性实施例中，可以在形成第二层（84）之前去除一维纳米结构（18），从而在第一和第二层（14,84）之间形成高k电介质层（32）。

6. 发明授权

US11260056B2 Diaminopyrimidine P2X3 and P2X2/3 receptor modulators for use in the treatment of cough 有权
公开(公告)号：US11260056B2
公开(公告)日：2022-03-01
申请号：US15764174
申请日：2016-09-23
申请人： Afferent Pharmaceuticals, Inc. , Anthony P. Ford , Kathleen Sereda Glaub , Michael M. Kitt , Steven Smith
发明人： Anthony P. Ford , Kathleen Sereda Glaub , Michael M. Kitt , Steven Smith
IPC分类号： A61K31/505 , A61K9/00 , A61K47/38 , A61K47/44 , A61K9/10 , A61K9/06 , A61K45/06 , A61K9/20 , A61K9/48
摘要： Methods for treating cough, chronic cough and urges to cough associated with respiratory diseases with a P2X3 and/or a P2X2/3 receptor antagonist, the methods comprising administering to a subject in need thereof an effective amount of a compound of Formula (I): or a pharmaceutically acceptable salt thereof, wherein R1 and R2 are as defined herein.

7. 发明申请

US20200049003A1 SYSTEMS AND METHODS FOR EVALUATING RESERVOIR SUPERCHARGED CONDITIONS 审中-公开
公开(公告)号：US20200049003A1
公开(公告)日：2020-02-13
申请号：US16100435
申请日：2018-08-10
申请人： Steven Smith
发明人： Steven Smith
IPC分类号： E21B49/08 , E21B49/10 , E21B47/06 , E21B49/00
摘要： Downhole formation pressure testing systems are provide. The systems include a drawdown pump, a probe configured to engage with a borehole wall and extract fluid from a formation, and a control element operably connected to the probe and the drawdown pump to perform a formation pressure testing operation. The formation pressure testing operation includes extracting a fluid from the formation for at least three drawdown intervals, monitoring a fluid pressure for a response interval at an end of each drawdown interval, measuring a fluid pressure at an end of each response interval to obtain a data point for each response interval, wherein each response interval is of the same duration, and wherein at least three data points are obtained, and performing a best fit analysis on the at least three data points, wherein the best fit analysis calculates a formation pressure.

8. 发明授权

US09175123B2 Gate insulator layer for organic electronic devices 有权
标题翻译：有机电子器件的栅极绝缘层
公开(公告)号：US09175123B2
公开(公告)日：2015-11-03
申请号：US13223884
申请日：2011-09-01
申请人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
发明人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
IPC分类号： B32B27/32 , C08F132/08 , C08F232/00 , H01L51/05
CPC分类号： H01L51/052 , C08F32/04 , C08F232/00 , C08L45/00 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/0537 , H01L51/0541 , H01L51/0545 , H01L51/107
摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.
摘要翻译：根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为用于制造电子器件的栅极绝缘体层，包括这种聚环烯烃栅极绝缘体的电子器件以及用于制备这种多环烯烃栅极绝缘体层和包含这些层的电子器件。

9. 再颁专利

USRE43552E1 Block programmable priority encoder in a cam 有权
标题翻译：在凸轮中嵌入可编程优先编码器
公开(公告)号：USRE43552E1
公开(公告)日：2012-07-24
申请号：US12709198
申请日：2010-02-19
申请人： Alan Roth , Sean Lord , Robert McKenzie , Dieter Haerle , Steven Smith
发明人： Alan Roth , Sean Lord , Robert McKenzie , Dieter Haerle , Steven Smith
IPC分类号： G06F12/00
CPC分类号： G11C15/00
摘要： A priority encoder (PE) for a CAM, comprising a plurality of PE blocks, each receiving a plurality of match results corresponding to data entries in a corresponding data array block and, for determining an address of a highest priority data entry based on a physical location in the data array block during a CAM search-and-compare operation a register for storing a user defined priority value assigned to each PE block and means for evaluating priority values and the address determined by the plurality of PE blocks to select a PE block having the highest priority data entry.
摘要翻译：一种用于CAM的优先编码器（PE），包括多个PE块，每个PE块都接收与对应的数据阵列块中的数据条目相对应的多个匹配结果，并且用于基于物理上的数据来确定最高优先级数据条目的地址在CAM搜索与比较操作期间在数据阵列块中的位置存储用于分配给每个PE块的用户定义的优先级值的寄存器以及用于评估优先级值的装置和由多个PE块确定的地址以选择PE块具有最高优先级的数据输入。

10. 发明申请

US20120056249A1 INTERLAYER FOR ELECTRONIC DEVICES 有权
标题翻译：电子设备中间层
公开(公告)号：US20120056249A1
公开(公告)日：2012-03-08
申请号：US13223784
申请日：2011-09-01
申请人： David Christoph Mueller , Pawel Miskiewicz , Toby Cull , Piotr Wierzchowiec , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
发明人： David Christoph Mueller , Pawel Miskiewicz , Toby Cull , Piotr Wierzchowiec , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
IPC分类号： B32B27/32 , C08F136/20 , H01L21/336 , C08F232/08 , H01L29/78 , C08F236/20 , C08F132/08
CPC分类号： H01L51/0043 , C08F232/00 , C08L65/00 , C08L2203/20 , H01L51/0035 , H01L51/0529 , H01L51/0541 , H01L51/0545 , Y10T428/31938
摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.
摘要翻译：根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为中间层，其用于制备电子器件的氟聚合物层，包含这种聚环烯夹层的电子器件和制备这种聚环烯夹层和电子器件。

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