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    • 6. 发明授权
    • IC PMOS Schottky reverse bias protection structure
    • IC PMOS肖特基反向偏置保护结构
    • US06674621B2
    • 2004-01-06
    • US09989066
    • 2001-11-21
    • Alexander Noam TeutschZbigniew Jan LataDavid John BaldwinRoss E. Teggatz
    • Alexander Noam TeutschZbigniew Jan LataDavid John BaldwinRoss E. Teggatz
    • F21V704
    • H01L27/0255H02H11/003
    • The present invention relates to a reverse bias protection structure which comprises a PMOS transistor structure having a drain portion, a gate portion, a source portion and a backgate portion, wherein the gate portion is coupled to a first voltage potential, the source portion is selectively coupleable to a power supply, and the drain portion is selectively coupleable to a circuit needing power to be supplied thereto from the power supply. The reverse bias protection structure further comprises a Schottky diode structure having an anode coupled to the source portion of the PMOS transistor structure, and a cathode coupled to the backgate portion of the PMOS structure. Under forward bias conditions, the PMOS transistor conducts and exhibits a small voltage drop thereacross. Under reverse bias conditions, the PMOS transistor is off and the Schottky structure is reverse biased, thus preventing current through the protection structure.
    • 本发明涉及一种反偏置保护结构,其包括具有漏极部分,栅极部分,源极部分和后栅极部分的PMOS晶体管结构,其中栅极部分耦合到第一电压电位,源极部分选择性地 可与电源连接,并且漏极部分选择性地耦合到需要从电源供给的电力的电路。 反向偏置保护结构还包括具有耦合到PMOS晶体管结构的源极部分的阳极的肖特基二极管结构以及耦合到PMOS结构的背栅极部分的阴极。 在正向偏置条件下,PMOS晶体管导通并呈现出小的电压降。 在反向偏置条件下,PMOS晶体管截止,肖特基结构反向偏置,从而防止电流通过保护结构。