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1. 发明授权

US09297746B2 Energetic material reaction characteristic detector 有权
标题翻译：能量反应特征检测器
公开(公告)号：US09297746B2
公开(公告)日：2016-03-29
申请号：US13308631
申请日：2011-12-01
申请人： Steven J. Apperson , Christopher J. Morris , Luke J. Currano , Collin R. Becker , Madan Dubey
发明人： Steven J. Apperson , Christopher J. Morris , Luke J. Currano , Collin R. Becker , Madan Dubey
IPC分类号： G01N27/00 , G01N27/02 , G01N27/06 , G01N21/27
CPC分类号： G01N21/272 , G01N27/02 , G01N27/06
摘要： A reaction characteristic detector comprising a ladder assembly including a plurality of rungs, where each rung in the plurality of rungs comprises a reaction passage determiner spaced a distance from a point of an energetic material reaction initiation. Each reaction passage determiner has at least one characteristic that is configured to change in response to the reaction occurring proximate to the reaction passage determiner.
摘要翻译：一种反应特性检测器，包括梯形组件，其包括多个梯级，其中多个梯级中的每个梯级包括与能量反应开始点间隔一定距离的反应通道确定器。每个反应通道确定器具有至少一个特征，其被配置为响应于靠近反应通道确定器发生的反应而改变。

2. 发明申请

US20130143330A1 Energetic Material Reaction Characteristic Detector 有权
标题翻译：能量反应特性检测器
公开(公告)号：US20130143330A1
公开(公告)日：2013-06-06
申请号：US13308631
申请日：2011-12-01
申请人： Steven J. Apperson , Christopher J. Morris , Luke J. Currano , Collin R. Becker , Madan Dubey
发明人： Steven J. Apperson , Christopher J. Morris , Luke J. Currano , Collin R. Becker , Madan Dubey
IPC分类号： G01N27/00 , G01N27/02 , G01N27/06 , G06F19/00
CPC分类号： G01N21/272 , G01N27/02 , G01N27/06
摘要： A reaction characteristic detector comprising a ladder assembly including a plurality of rungs, where each rung in the plurality of rungs comprises a reaction passage determiner spaced a distance from a point of an energetic material reaction initiation. Each reaction passage determiner has at least one characteristic that is configured to change in response to the reaction occurring proximate to the reaction passage determiner.
摘要翻译：一种反应特性检测器，包括梯形组件，其包括多个梯级，其中多个梯级中的每个梯级包括与能量反应开始点间隔一定距离的反应通道确定器。每个反应通道确定器具有至少一个特征，其被配置为响应于靠近反应通道确定器发生的反应而改变。

3. 发明申请

US20120305891A1 GRAPHENE CHANNEL TRANSISTORS AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：石墨通道晶体管及其生产方法
公开(公告)号：US20120305891A1
公开(公告)日：2012-12-06
申请号：US13479552
申请日：2012-05-24
申请人： Osama M. Nayfeh , Madan Dubey
发明人： Osama M. Nayfeh , Madan Dubey
IPC分类号： H01L29/78 , H01L21/20 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/1033 , H01L29/1606 , H01L29/66045 , H01L29/66431 , H01L29/66462 , H01L29/7781 , H01L29/78618 , H01L29/78684
摘要： Embodiments of graphene channel transistors and methods for producing same are provided herein. In some embodiments, a graphene channel transistor may include a substrate a having a source region, a drain region, and a dielectric material disposed between the source and drain regions; a channel region comprising a graphene layer disposed atop the dielectric material and partially atop the source and drain regions; and a composite gate electrode comprising an insulator layer disposed atop the graphene layer and a conductive layer disposed atop the insulator layer.
摘要翻译：本发明提供石墨烯晶体管的实施例及其制造方法。在一些实施例中，石墨烯通道晶体管可以包括具有源极区，漏极区和设置在源极和漏极区之间的介电材料的衬底a; 沟道区域，包括设置在电介质材料顶部并且部分地位于源极和漏极区域顶部的石墨烯层; 以及复合栅电极，其包括设置在石墨烯层顶部的绝缘体层和设置在绝缘体层顶上的导电层。

4. 发明申请

US20120298960A1 Hetero-Junction Tunneling Transistor 有权
标题翻译：异质结隧道晶体管
公开(公告)号：US20120298960A1
公开(公告)日：2012-11-29
申请号：US13479392
申请日：2012-05-24
申请人： Osama M. Nayfeh , Madan Dubey
发明人： Osama M. Nayfeh , Madan Dubey
IPC分类号： H01L29/775
CPC分类号： H01L29/0847 , H01L29/7391
摘要： A hetero-junction tunneling transistor having a first layer of p++ silicon germanium which forms a source for the transistor at one end. A second layer of n+ silicon material is deposited so that a portion of the second layer overlies the first layer and forms the drain for the transistor. An insulating layer and metallic gate for the transistor is deposited on top of the second layer so that the gate is aligned with the overlying portions of the first and second layers. The gate voltage controls the conduction between the source and the drain and the conduction between the first and second layers occurs by vertical tunneling between the layers.
摘要翻译：异质结隧道晶体管具有第一层p ++硅锗，其在一端形成晶体管的源极。沉积第二层n +硅材料，使得第二层的一部分覆盖第一层并形成晶体管的漏极。用于晶体管的绝缘层和金属栅极沉积在第二层的顶部上，使得栅极与第一层和第二层的上覆部分对准。栅极电压控制源极和漏极之间的导通，并且第一和第二层之间的导通通过层之间的垂直隧道发生。

5. 发明授权

US09573856B2 Carbon nanotube explosives 有权
标题翻译：碳纳米管炸药
公开(公告)号：US09573856B2
公开(公告)日：2017-02-21
申请号：US13372720
申请日：2012-02-14
申请人： Luke M. Currano , Madan Dubey , Ronald G. Polcawich
发明人： Luke M. Currano , Madan Dubey , Ronald G. Polcawich
IPC分类号： C06B43/00 , C06B45/00
CPC分类号： C06B43/00 , C06B45/00
摘要： A micro-explosive material is provided. The micro-explosive material can include a carbon nanotube and a solid oxidizer attached to the carbon nanotube. The carbon nanotube with the solid oxidizer attached thereto is operable to burn per an exothermic chemical reaction between the carbon nanotube and the solid oxidizer such that a controlled burn and/or an explosive burn is provided. The micro-explosive material can be used as a heat generator, a gas generator, a micro-thruster, a primer for use with a larger explosive material, and the like.
摘要翻译：提供微爆材料。微爆材料可以包括碳纳米管和连接到碳纳米管的固体氧化剂。附着有固体氧化剂的碳纳米管可操作以在碳纳米管和固体氧化剂之间的放热化学反应中燃烧，从而提供受控的燃烧和/或爆炸性燃烧。微爆炸材料可以用作发热体，气体发生器，微推进器，用于较大爆炸性材料的底漆等。

6. 发明授权

US06311003B1 Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides 失效
标题翻译：用于形成具有半导体波导形式的互连的光学电子集成电路的技术
公开(公告)号：US06311003B1
公开(公告)日：2001-10-30
申请号：US09256579
申请日：1999-02-24
申请人： Madan Dubey , Kenneth A. Jones , Weiyu Han , Lawrence C. West
发明人： Madan Dubey , Kenneth A. Jones , Weiyu Han , Lawrence C. West
IPC分类号： G02B610
CPC分类号： G02B6/10 , G02B6/12004 , G02B6/122 , G02B6/132 , G02B6/136 , G02B6/43 , G02B2006/12176
摘要： An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide.
摘要翻译：一种具有光波导作为器件互连的光电子集成电路（OEIC）。通过在基本上降低膜的孔隙率和材料从衬底扩散到膜中的温度下，在半导体衬底上在无氧气氛中沉积半导体材料的膜而形成光波导。蚀刻具有大于基板的折射率的半导体膜，以在基板上形成光波导。基板还支撑多个有源光学器件，光波导延伸在该有源光学器件之间。衬底优选由砷化镓和来自锗的波导形成。有源器件还可以包括这些材料以及砷化镓铝。

7. 发明授权

US6051445A Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides 失效
标题翻译：用于形成具有半导体波导形式的互连的光学电子集成电路的技术
公开(公告)号：US6051445A
公开(公告)日：2000-04-18
申请号：US267918
申请日：1999-02-24
申请人： Madan Dubey , Kenneth A. Jones , Weiyu Han , Lawrence C. West
发明人： Madan Dubey , Kenneth A. Jones , Weiyu Han , Lawrence C. West
IPC分类号： G02B6/10 , G02B6/12 , G02B6/122 , G02B6/132 , G02B6/136 , G02B6/43 , H01L21/20
CPC分类号： G02B6/10 , G02B6/12004 , G02B6/122 , G02B6/132 , G02B6/136 , G02B2006/12176 , G02B6/43
摘要： An optical electronic integrated (circuit (OEIC) having optical waveguidess device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.
摘要翻译：一种具有光波导作为器件互连的光学电子集成（电路（OEIC）），通过在无氧气氛中在半导体衬底上沉积半导体材料的膜而形成光波导，该温度基本上降低了半导体衬底的孔隙率膜和材料从衬底扩散到膜中，其折射率大于衬底的半导体膜被蚀刻以在衬底上形成光波导，衬底还支撑多个有源光学光波导延伸的装置，基板优选由砷化镓和锗的波导形成，有源器件还可以包括这些材料以及砷化镓铝，当使用这些材料时，锗膜被沉积在无氧环境中约100摄氏度。

8. 发明申请

US20130206290A1 CARBON NANOTUBE EXPLOSIVES 有权
标题翻译：碳纳米管爆炸
公开(公告)号：US20130206290A1
公开(公告)日：2013-08-15
申请号：US13372720
申请日：2012-02-14
申请人： Luke M. Currano , Madan Dubey , Ronald G. Polcawich
发明人： Luke M. Currano , Madan Dubey , Ronald G. Polcawich
IPC分类号： C06B43/00 , B82Y30/00
CPC分类号： C06B43/00 , C06B45/00
摘要： A micro-explosive material is provided. The micro-explosive material can include a carbon nanotube and a solid oxidizer attached to the carbon nanotube. The carbon nanotube with the solid oxidizer attached thereto is operable to burn per an exothermic chemical reaction between the carbon nanotube and the solid oxidizer such that a controlled burn and/or an explosive burn is provided. The micro-explosive material can be used as a heat generator, a gas generator, a micro-thruster, a primer for use with a larger explosive material, and the like.
摘要翻译：提供微爆材料。微爆材料可以包括碳纳米管和连接到碳纳米管的固体氧化剂。附着有固体氧化剂的碳纳米管可操作以在碳纳米管和固体氧化剂之间的放热化学反应中燃烧，从而提供受控的燃烧和/或爆炸性燃烧。微爆炸材料可以用作发热体，气体发生器，微推进器，用于较大爆炸性材料的底漆等。

9. 发明授权

US5917967A Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides 失效
标题翻译：用于形成具有半导体波导形式的互连的光学电子集成电路的技术
公开(公告)号：US5917967A
公开(公告)日：1999-06-29
申请号：US861387
申请日：1997-05-21
申请人： Madan Dubey , Kenneth A. Jones , Weiyu Han , Lawrence C. West
发明人： Madan Dubey , Kenneth A. Jones , Weiyu Han , Lawrence C. West
IPC分类号： G02B6/10 , G02B6/12 , G02B6/122 , G02B6/132 , G02B6/136 , G02B6/43
CPC分类号： G02B6/10 , G02B6/12004 , G02B6/122 , G02B6/132 , G02B6/136 , G02B2006/12176 , G02B6/43
摘要： An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a to plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.
摘要翻译：一种具有光波导作为器件互连的光电子集成电路（OEIC）。通过在基本上降低膜的孔隙率和材料从衬底扩散到膜中的温度下，在半导体衬底上在无氧气氛中沉积半导体材料的膜而形成光波导。蚀刻具有大于基板的折射率的半导体膜，以在基板上形成光波导。基板还支撑一个至多个有源光学器件，光波导延伸在其间。衬底优选由砷化镓和来自锗的波导形成。有源器件还可以包括这些材料以及砷化镓铝。当使用这些材料时，锗膜在大约100摄氏度的无氧环境中沉积。

10. 发明授权

US08629480B2 Hetero-junction tunneling transistor 有权
标题翻译：异质结隧道晶体管
公开(公告)号：US08629480B2
公开(公告)日：2014-01-14
申请号：US13479392
申请日：2012-05-24
申请人： Osama M. Nayfeh , Madan Dubey
发明人： Osama M. Nayfeh , Madan Dubey
IPC分类号： H01L29/66
CPC分类号： H01L29/0847 , H01L29/7391
摘要： A hetero-junction tunneling transistor having a first layer of p++ silicon germanium which forms a source for the transistor at one end. A second layer of n+ silicon material is deposited so that a portion of the second layer overlies the first layer and forms the drain for the transistor. An insulating layer and metallic gate for the transistor is deposited on top of the second layer so that the gate is aligned with the overlying portions of the first and second layers. The gate voltage controls the conduction between the source and the drain and the conduction between the first and second layers occurs by vertical tunneling between the layers.
摘要翻译：异质结隧道晶体管具有第一层p ++硅锗，其在一端形成晶体管的源极。沉积第二层n +硅材料，使得第二层的一部分覆盖第一层并形成晶体管的漏极。用于晶体管的绝缘层和金属栅极沉积在第二层的顶部上，使得栅极与第一层和第二层的上覆部分对准。栅极电压控制源极和漏极之间的导通，并且第一和第二层之间的导通通过层之间的垂直隧道发生。

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