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    • 6. 发明授权
    • Chemical vapor deposition of luminescent films
    • 化学气相沉积发光膜
    • US3984587A
    • 1976-10-05
    • US381709
    • 1973-07-23
    • Steven Alan Lipp
    • Steven Alan Lipp
    • C09K11/00C23C16/40B05D5/12
    • C23C16/401C09K11/00C23C16/40
    • Method for depositing a luminescent film upon a substrate comprising vaporizing into a nonreactive carrier gas (1) at least one member of a first group consisting of hydrides and alkyls of M.sup.1, wherein M.sup.1 is at least one of silicon, germanium, boron, phosphorus, and aluminum, (2) at least one volatile M.sup.2 -containing organo-metallic compound of a second group, wherein M.sup.2 is at least one of zinc, cadmium, magnesium, calcium, beryllium, strontium, or barium, and (3) at least one volatile M.sup.3 -containing organo-metallic compound of a third group, wherein M.sup.3 is at least one activator for said luminescent film. The vapor-laden carrier gas and the oxidizing gas are contacted with the substrate which is at temperatures in the range of about 300.degree. to 700.degree.C. The reaction is continued unitl the desired thickness of luminescent film is achieved.
    • 在衬底上沉积发光膜的方法,其包括汽化成非反应性载气(1)由氢化物和M1烷基组成的第一组中的至少一个元素,其中M1是硅,锗,硼,磷中的至少一种, 铝,(2)至少一种挥发性含镁有机金属化合物,其中M2是锌,镉,镁,钙,铍,锶或钡中的至少一种,和(3)至少 一种挥发性含M3的有机金属化合物,其中M3是至少一种用于所述发光膜的活化剂。 载气载气和氧化性气体与温度在约300〜700℃的基板接触。反应持续单位1,实现了所需的发光膜厚度。