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    • 2. 发明申请
    • Methods to make piezoelectric ceramic thick film array and single elements and devices
    • 制造压电陶瓷厚膜阵列和单元件和器件的方法
    • US20090113685A1
    • 2009-05-07
    • US11363849
    • 2006-02-28
    • Baomin XuSteven A. BuhlerMichael C. WelsbergWilliam S. WongScott E. SolbergKarl A. LittauJohn S. FitchScott A. Elrod
    • Baomin XuSteven A. BuhlerMichael C. WelsbergWilliam S. WongScott E. SolbergKarl A. LittauJohn S. FitchScott A. Elrod
    • H04R17/00
    • B41J2/161B41J2/1623B41J2/1632B41J2/1634B41J2/1637B41J2/1646H01L41/313H01L41/314H01L41/331H01L2221/68368Y10T29/42Y10T29/435Y10T29/49128Y10T29/4913Y10T29/49133Y10T29/49155Y10T29/4981
    • A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.In another embodiment, a material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 μm to 100 μm. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.
    • 制造至少一个压电元件的方法包括将压电陶瓷材料沉积到第一基板的表面上以形成至少一个压电元件结构。 然后在至少一个压电元件结构的表面上沉积电极。 接下来,将至少一个压电元件结构接合到第二基板,第二基板是导电的或具有导电层。 然后从至少一个压电元件结构去除第一衬底,并且第二侧电极沉积在至少一个压电元件结构的第二表面上。 执行极化操作以向至少一个压电元件结构提供压电特性。 在另一个实施例中,用于厚膜元件的材料沉积到第一基底的表面上以形成厚度大于10um至100μm的厚膜元件结构。 所述至少一个厚膜元件结构被结合到第二基板。 此后,使用包括从辐射源(例如激光或其它合适的装置)发射通过第一基板的光束到形成的附接接口的剥离过程,从至少一个厚膜元件结构中去除第一基板, 在第一基板和第一基板的表面处的至少一个厚膜元件结构之间。 第一衬底在光束的波长处基本上是透明的,并且光束在界面处产生足够的能量以破坏附件。
    • 8. 发明授权
    • Piezoelectric diaphragm structure with outer edge electrode
    • 压电膜片结构,外缘电极
    • US07084555B2
    • 2006-08-01
    • US10739478
    • 2003-12-18
    • John R. BachellerieSteven A. BuhlerJohn S. FitchMeng H. LeanKarl A. Littau
    • John R. BachellerieSteven A. BuhlerJohn S. FitchMeng H. LeanKarl A. Littau
    • H01L41/08
    • H01L41/0973H01L41/047
    • A multi-electrode piezoelectric diaphragm structure includes a diaphragm, piezoelectric material located on the diaphragm, which is defined as having a first area, and a second area. The first area of the piezoelectric is poled in a first direction, and the second area of the piezoelectric is poled in a second direction. The poled first direction is in a Z-axis of the piezoelectric and the poled second direction is in a Radial axis of the piezoelectric. A first electrode is positioned in the first area, on the first surface, of the piezoelectric. A second electrode is positioned in the second area, on the first surface, of the piezoelectric. A third electrode is located on a second surface of the piezoelectric. The application of voltages to the first, second and third electrodes generates electric fields in the piezoelectric material resulting in actuation of the piezoelectric material, or the application of pressure or strain to the diaphragm generates electric potentials at the first, second and third electrodes.
    • 多电极压电膜结构包括隔膜,位于膜片上的压电材料,其被定义为具有第一区域,第二区域。 压电体的第一区域沿第一方向极化,并且压电体的第二区域在第二方向上极化。 极化的第一方向在压电体的Z轴上,并且极化的第二方向处于压电体的径向轴线。 第一电极位于压电体的第一表面的第一区域中。 第二电极位于压电体的第一表面的第二区域中。 第三电极位于压电体的第二表面上。 施加电压到第一,第二和第三电极在压电材料中产生电场,导致压电材料的致动,或施加压力或应变到隔膜在第一,第二和第三电极处产生电位。