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    • 7. 发明申请
    • Methods to make piezoelectric ceramic thick film array and single elements and devices
    • 制造压电陶瓷厚膜阵列和单元件和器件的方法
    • US20090113685A1
    • 2009-05-07
    • US11363849
    • 2006-02-28
    • Baomin XuSteven A. BuhlerMichael C. WelsbergWilliam S. WongScott E. SolbergKarl A. LittauJohn S. FitchScott A. Elrod
    • Baomin XuSteven A. BuhlerMichael C. WelsbergWilliam S. WongScott E. SolbergKarl A. LittauJohn S. FitchScott A. Elrod
    • H04R17/00
    • B41J2/161B41J2/1623B41J2/1632B41J2/1634B41J2/1637B41J2/1646H01L41/313H01L41/314H01L41/331H01L2221/68368Y10T29/42Y10T29/435Y10T29/49128Y10T29/4913Y10T29/49133Y10T29/49155Y10T29/4981
    • A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.In another embodiment, a material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 μm to 100 μm. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.
    • 制造至少一个压电元件的方法包括将压电陶瓷材料沉积到第一基板的表面上以形成至少一个压电元件结构。 然后在至少一个压电元件结构的表面上沉积电极。 接下来,将至少一个压电元件结构接合到第二基板,第二基板是导电的或具有导电层。 然后从至少一个压电元件结构去除第一衬底,并且第二侧电极沉积在至少一个压电元件结构的第二表面上。 执行极化操作以向至少一个压电元件结构提供压电特性。 在另一个实施例中,用于厚膜元件的材料沉积到第一基底的表面上以形成厚度大于10um至100μm的厚膜元件结构。 所述至少一个厚膜元件结构被结合到第二基板。 此后,使用包括从辐射源(例如激光或其它合适的装置)发射通过第一基板的光束到形成的附接接口的剥离过程,从至少一个厚膜元件结构中去除第一基板, 在第一基板和第一基板的表面处的至少一个厚膜元件结构之间。 第一衬底在光束的波长处基本上是透明的,并且光束在界面处产生足够的能量以破坏附件。