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1. 发明申请

US20060157493A1 Lid dispenser 失效
标题翻译：盖子分配器
公开(公告)号：US20060157493A1
公开(公告)日：2006-07-20
申请号：US11249732
申请日：2005-10-12
申请人： Steve Christoffersen , Thomas Hecht , Scott Thompson , Michael Simi
发明人： Steve Christoffersen , Thomas Hecht , Scott Thompson , Michael Simi
IPC分类号： B65H3/00
CPC分类号： A47F1/106
摘要： A dispensing apparatus for dispensing a lid from a stack of lids each having a lid periphery includes a load platform having a main floor on which to place a stack of lids, the main floor sloping downward from an apex in a rearward direction, the load platform having a forward slope inclined downward from the apex in a forward direction. A parallelogram mechanism is mounted to move in a linear direction forward to a dispense position and rearward to a home position. A hinge is coupled to the parallelogram mechanism and has a handle with a distal end oriented upward and forward to contact an inner surface of a lid periphery of a bottommost lid of the stack of lids when the parallelogram mechanism moves forward from the home position toward the dispense position. After the distal end of the handle of the hinge contacts the inner surface of the lid periphery of the bottommost lid, the parallelogram mechanism deforms to de-elevate the hinge and move the distal end of the handle of the hinge downward causing the bottommost lid to deformably move downward to the forward slope of the load platform to separate from the stack of lids for dispensing.
摘要翻译：一种用于从每个具有盖周边的盖子分配盖子的分配装置包括：负载平台，其具有主底板，在其上放置一叠盖子，主底板从顶端向后倾斜，负载平台具有从顶点向前方向向下倾斜的前斜面。安装平行四边形机构以在线性方向向前移动到分配位置并向后移动到原始位置。铰链联接到平行四边形机构，并且具有手柄，其前端朝上和向前定向，以便当平行四边形机构从原始位置向前移动时接触盖子堆叠的最底部盖的盖周边的内表面分配位置在铰链的手柄的远端接触最底盖的盖周边的内表面之后，平行四边形机构变形以使铰链脱升并且使铰链的手柄的远端向下移动，使最底部的盖子可变形地向下移动到负载平台的前斜面以与用于分配的盖子堆叠分离。

2. 发明授权

US07669646B2 Heat exchanger with header and flow guide 有权
标题翻译：热交换器带头部和导流管
公开(公告)号：US07669646B2
公开(公告)日：2010-03-02
申请号：US11589710
申请日：2006-10-31
申请人： Herbert Aigner , Gabriele Engl , Thomas Hecht , Helge Möbus , Stefan Möller , Wolfgang Süssmann , Alfred Wanner
发明人： Herbert Aigner , Gabriele Engl , Thomas Hecht , Helge Möbus , Stefan Möller , Wolfgang Süssmann , Alfred Wanner
IPC分类号： F28F9/02
CPC分类号： F28F9/02 , F28D9/00 , F28D2021/0033 , F28F9/0246 , F28F9/0265
摘要： A plate heat exchanger includes a heat exchanger block having a plurality of heat exchange passages. On the heat exchanger block, a header is mounted that extends over at least one part of one side of the heat exchanger block and establishes a flow connection between the heat exchange passages. The plate heat exchanger is provided with a fluid connection, which is formed by the header-side end of a pipeline. The fluid connection is essentially perpendicular to the side of the heat exchanger block over which the header extends. Within the pipeline directly in front of the header, there is a flow guide.
摘要翻译：板式换热器包括具有多个热交换通道的热交换器块。在热交换器块上，安装有在热交换器块的一侧的至少一部分上延伸并在热交换通道之间建立流动连接的集管。板式换热器设置有由管道的集管侧端部形成的流体连接。流体连接基本上垂直于热交换器块的侧面，头部延伸穿过该块。在管道前面的管道中，有一个流程图。

3. 发明申请

US20070281432A1 Transistor and method of providing interlocking strained silicon on a silicon substrate 审中-公开
标题翻译：在硅衬底上提供互锁应变硅的晶体管和方法
公开(公告)号：US20070281432A1
公开(公告)日：2007-12-06
申请号：US11443501
申请日：2006-05-30
申请人： Matthias Goldbach , Thomas Hecht
发明人： Matthias Goldbach , Thomas Hecht
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/76229 , H01L21/823878 , H01L29/7846
摘要： A method for providing interlocking strained silicon on a silicon substrate, comprises providing a mask on a surface of the substrate. The mask comprises a first plurality of openings corresponding to a first plurality of holes to be etched and comprises a second plurality of openings corresponding to a second plurality of holes to be etched. The surface of the substrate is etched through the mask to form the first and second pluralities of holes. A first strain type material is deposited into the first plurality of holes to form a plurality of first strain type portions. A plurality of second strain type portions are formed at the second plurality of holes.
摘要翻译：一种在硅衬底上提供互锁应变硅的方法，包括在衬底的表面上提供掩模。掩模包括对应于待蚀刻的第一多个孔的第一多个开口，并且包括对应于待蚀刻的第二多个孔的第二多个开口。通过掩模蚀刻衬底的表面以形成第一和第二多个孔。第一应变型材料沉积到第一多个孔中以形成多个第一应变型部分。在第二多个孔处形成多个第二应变型部分。

4. 发明申请

US20070137844A1 Plate heat exchanger 审中-公开
标题翻译：板式换热器
公开(公告)号：US20070137844A1
公开(公告)日：2007-06-21
申请号：US11607094
申请日：2006-12-01
申请人： Herbert Aigner , Gabriele Engl , Thomas Hecht , Stefan Moller , Wolfgang Sussmann , Alfred Wanner
发明人： Herbert Aigner , Gabriele Engl , Thomas Hecht , Stefan Moller , Wolfgang Sussmann , Alfred Wanner
IPC分类号： F28F3/00
CPC分类号： F28D9/0037 , F28F9/02 , F28F9/0243
摘要： In a plate heat exchanger having a heat exchanger block (1) with a number of heat exchange passages and a header (2) attached to the heat exchanger block, the header providing a flow connection between a portion of the heat exchange passages and a fluid connection (3), the header is defined by a cylinder jacket segment-shaped wall (7) and by a flat surface (12), which runs parallel to the axis of the cylinder (13) on a side (5) of the heat exchanger block. The length of the header extends over at least one portion of a side (5) of the heat exchanger block. At least one wall (7) of the header is connected to the side (5) of the heat exchanger block. The header is designed so that the axis (13) of the cylinder runs inside the header spaced at a distance (11) from the flat surface (12).
摘要翻译：在具有具有多个热交换通道的热交换器块（1）和附接到热交换器块的集管（2）的板式换热器中，集管提供一部分热交换通道与流体连接件（3）的头部由圆筒套管段形壁（7）和平坦表面（12）限定，平面（12）平行于气缸（13）的轴线（5）交换器块。集管的长度在热交换器块的侧面（5）的至少一部分上延伸。集管的至少一个壁（7）连接到热交换器块的侧面（5）。该集管被设计成使得气缸的轴线（13）在与该平坦表面（12）间隔开的距离（11）内的集管的内部延伸。

5. 发明申请

US20070111547A1 Method for producing a semiconductor structure 审中-公开
标题翻译：半导体结构的制造方法
公开(公告)号：US20070111547A1
公开(公告)日：2007-05-17
申请号：US11582656
申请日：2006-10-18
申请人： Thomas Hecht , Stefan Jakschik , Christian Kapteyn
发明人： Thomas Hecht , Stefan Jakschik , Christian Kapteyn
IPC分类号： H01L21/31
CPC分类号： H01L21/31111 , H01L21/28202 , H01L21/823857 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/78
摘要： In a method for producing a semiconductor structure a substrate is provided, a dielectric layer comprising at least one metal oxide is formed on the substrate, and a nitrided layer is formed from the dielectric layer. The nitrided layer comprises either at least one metal nitride corresponding to the metal oxide or a metal oxynitride. The nitrided layer is removed selectively with respect to the dielectric layer in a predetermined etching medium.
摘要翻译：在制造半导体结构体的方法中，提供了基板，在基板上形成包含至少一种金属氧化物的电介质层，并且从电介质层形成氮化层。氮化层包括至少一种对应于金属氧化物的金属氮化物或金属氮氧化物。在预定的蚀刻介质中相对于电介质层选择性地去除氮化层。

6. 发明授权

US07176514B2 Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material 有权
标题翻译：通过衬底材料的自对准和自限制电化学转换来加强缺陷处的介电层的方法和结构
公开(公告)号：US07176514B2
公开(公告)日：2007-02-13
申请号：US10413812
申请日：2003-04-15
申请人： Thomas Hecht , Albert Birner , Harald Seidl , Uwe Schröder , Stefan Jakschik , Martin Gutsche
发明人： Thomas Hecht , Albert Birner , Harald Seidl , Uwe Schröder , Stefan Jakschik , Martin Gutsche
IPC分类号： H01L27/108 , H01L21/76
CPC分类号： H01L21/02238 , C25D11/02 , C25D11/32 , H01L21/02258 , H01L21/31675 , H01L21/31687 , H01L27/1085
摘要： A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.
摘要翻译：用于在由导电基板材料制成的基板上制造介电层的方法包括至少通过导电基板材料的自对准和自限制电化学转换为不导电的方式减少流过电介质层的缺陷的漏电流衬底跟随材料在与缺陷相邻的衬底的部分中。还提供了包括具有缺陷的电介质层，由导电基板材料制成的基板以及由与该缺陷相邻的部分中的非导电性基板追随材料制成的加强区域的结构。

7. 发明申请

US20060234463A1 Method for fabricating an electrical component 有权
标题翻译：电气部件的制造方法
公开(公告)号：US20060234463A1
公开(公告)日：2006-10-19
申请号：US11399811
申请日：2006-04-07
申请人： Alejandro Avellan , Thomas Hecht , Stefan Jakschik , Uwe Schroeder
发明人： Alejandro Avellan , Thomas Hecht , Stefan Jakschik , Uwe Schroeder
IPC分类号： H01L21/20 , H01L21/8242 , H01L21/31 , H01L21/469
CPC分类号： H01L28/65 , H01L27/1087 , H01L29/66181
摘要： An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.
摘要翻译：制造诸如DRAM半导体存储器或场效应晶体管的电气部件。制造具有电介质（130）和至少一个连接电极（120,140）的至少一个电容器。为了使得制造的电容器即使对于非常小的电容器结构也具有最佳的存储特性，电介质（130）或连接电极（120,140）形成为使得瞬态极化效应被防止或至少减小。

8. 发明授权

US07100280B2 Method for producing a heat exchanger 有权
标题翻译：热交换器的制造方法
公开(公告)号：US07100280B2
公开(公告)日：2006-09-05
申请号：US10785484
申请日：2004-02-25
申请人： Stefan Moeller , Alfred Wanner , Gabriele Engl , Thomas Hecht , Wolfgang Suessmann , Herbert Aigner
发明人： Stefan Moeller , Alfred Wanner , Gabriele Engl , Thomas Hecht , Wolfgang Suessmann , Herbert Aigner
IPC分类号： B21D39/06 , B21D53/02 , B21D53/08 , B23P15/26
CPC分类号： F28D9/0037 , F28D9/0043 , F28F9/0246 , F28F9/26 , Y10T29/4935 , Y10T29/49366 , Y10T29/49389 , Y10T29/53113 , Y10T29/53117
摘要： The invention relates to a method for producing a plate heat exchanger from a plurality of heat exchanger blocks (1a, 1b). Each heat exchanger block (1a, 1b) has mounted on it a header (6a, 7a, 6b, 7b) which extends over at least part of one side of the heat exchanger block (1a, 1b). The heat exchanger blocks (1a, 1b) are arranged next to one another, and the headers (6a, 6b; 7a, 7b) of two adjacent heat exchanger blocks (1a, 1b) are provided on their mutually confronting sides with orifices and are connected to one another in such a way that a flow connection occurs between the two headers (6a, 6b; 7a, 7b).
摘要翻译：本发明涉及一种从多个热交换器块（1a，1b）制造板式换热器的方法。每个热交换器块（1a，1b）已经在其上安装有在热交换器块（1a，1b）的一侧的至少一部分上延伸的集管（6a，7a，6b，7b））。热交换器块（1a，1b）彼此相邻布置，并且两个相邻的热交换器块（1a，1b）的集管（6a，6b; 7a，7b）设置在它们彼此相互面对的两侧彼此连接，以便在两个集管（6a，6b; 7a，7b）之间发生流动连接。

9. 发明申请

US20060127576A1 Method and process reactor for sequential gas phase deposition by means of a process and an auxiliatry chamber 审中-公开
标题翻译：用于通过工艺和辅助室进行顺序气相沉积的方法和工艺反应器
公开(公告)号：US20060127576A1
公开(公告)日：2006-06-15
申请号：US10529412
申请日：2003-09-24
申请人： Thomas Hecht , Jorn Lutzen
发明人： Thomas Hecht , Jorn Lutzen
IPC分类号： C23C16/00
CPC分类号： C23C16/4412 , C23C16/45544 , C23C16/45557
摘要： In a process chamber of a process reactor, a sequential gas phase deposition (ALD, atomic layer deposition) of two or more precursors fed in by means of process gases is controlled. The process chamber is connected to an auxiliary chamber for a change of precursor and so the precursor to be removed is rarefied in the process chamber, so that a process duration of the sequential gas phase deposition that is determined by a change of precursor is reduced.
摘要翻译：在工艺反应器的处理室中，控制通过工艺气体进料的两种或多种前体的顺序气相沉积（ALD，原子层沉积）。处理室连接到辅助室以改变前体，因此待处理的前体在处理室中被稀释，使得由前体变化确定的连续气相沉积的工艺持续时间减少。

10. 发明申请

US20050158945A1 Memory cell and method for fabricating it 有权
标题翻译：记忆单元及其制造方法
公开(公告)号：US20050158945A1
公开(公告)日：2005-07-21
申请号：US10980069
申请日：2004-11-03
申请人： Albert Birner , Matthias Foerster , Thomas Hecht , Michael Stadtmueller , Andreas Orth
发明人： Albert Birner , Matthias Foerster , Thomas Hecht , Michael Stadtmueller , Andreas Orth
IPC分类号： H01L21/8239 , H01L21/334 , H01L21/8229 , H01L21/8242 , H01L29/94
CPC分类号： H01L29/66181 , H01L29/945
摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).
摘要翻译：本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103）型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105）的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。

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