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1. 发明授权

US4414066A Electrochemical photoetching of compound semiconductors 失效
标题翻译：化学半导体的电化学光刻
公开(公告)号：US4414066A
公开(公告)日：1983-11-08
申请号：US416472
申请日：1982-09-10
申请人： Stephen R. Forrest , Paul A. Kohl , Richard L. Panock
发明人： Stephen R. Forrest , Paul A. Kohl , Richard L. Panock
IPC分类号： C25F3/12 , H01L21/3063 , H01L21/465 , H01L21/467
CPC分类号： H01L21/467 , C25F3/12 , H01L21/30635 , H01L21/465
摘要： A procedure is described for electrochemically photoetching n-type and intrinsic compound semiconductors. The process involves applying a potential to the compound semiconductor while it is in contact with an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. By suitable adjustment in the potential, electrolytic solution composition and light energy, the etch rate is made proportional to the light intensity. By suitable variation in light intensity and light-ray direction, various geometrical features can be made on the surface of the compound semiconductor. For example, a hole with straight sides can be made in the compound semiconductor by use of a light spot and parallel (collimated) light rays. An advantageous application of this process is the fabrication of a photodiode with a hole in the center for use in bidirectional communication systems and to monitor power output for optical communication sources. The advantage of this process is that no damage occurs outside etched hole so that a maximum area of the photodiode remains active for detecting incoming radiation. Another advantage of the process is that etching will stop where the material becomes p-type so that etching can be made to stop automatically at a p/n junction.
摘要翻译：描述了用于电化学光刻n型和本征化合物半导体的方法。该方法包括在化合物半导体与电解液接触的同时施加电位，并在一定的能量范围内用光照射被蚀刻的表面。通过适当调整电位，电解液组成和光能，刻蚀速率与光强成正比。通过适当的光强度和光线方向的变化，可以在化合物半导体的表面上形成各种几何特征。例如，可以通过使用光点和平行（准直）光线在化合物半导体中制造具有直边的孔。该方法的有利应用是制造在中心具有用于双向通信系统的孔的光电二极管，并监视光通信源的功率输出。该方法的优点是在蚀刻孔外部不产生损伤，使得光电二极管的最大面积保持活跃以检测入射辐射。该方法的另一个优点是，在材料变为p型的情况下，蚀刻将停止，使得蚀刻可以在p / n结处自动停止。

2. 发明授权

US4577209A Photodiodes having a hole extending therethrough 失效
标题翻译：具有延伸穿过其中的孔的光电二极管
公开(公告)号：US4577209A
公开(公告)日：1986-03-18
申请号：US653885
申请日：1984-09-25
申请人： Stephen R. Forrest , Richard L. Panock
发明人： Stephen R. Forrest , Richard L. Panock
IPC分类号： H04B10/24 , H01L27/14
CPC分类号： H04B10/40
摘要： A single-wavelength, bidirectional fiber optic transmission system is described in which at each terminal the output radiation of a light source (LED or semiconductor laser) is coupled through a small diameter hole in the active area of a photodiode into the core of a larger diameter transmission fiber. On the other hand, radiation propagating through the fiber in the opposite direction exits from the fiber with a large NA so that most of it is incident on the active area of the photodiode and little is lost through the hole. Also described are a number of photodiode configurations for use in such a system, as well as dual photodiodes to perform both signal detection and output monitoring functions.
摘要翻译：描述了单波长双向光纤传输系统，其中在每个端子处，光源（LED或半导体激光器）的输出辐射通过光电二极管的有源区域中的小直径孔耦合到较大的核心中直径传输光纤。另一方面，沿相反方向传播通过光纤的辐射以大的NA离开纤维，使得其大部分入射到光电二极管的有源区域上，并且几乎不通过孔而损失。还描述了用于这种系统的多个光电二极管配置以及执行信号检测和输出监视功能的双光电二极管。

3. 发明授权

US4709413A Bidirectional fiber optic systems 失效
标题翻译：双向光纤系统
公开(公告)号：US4709413A
公开(公告)日：1987-11-24
申请号：US744465
申请日：1985-06-13
申请人： Stephen R. Forrest , Robert A. Lieberman , Richard L. Panock
发明人： Stephen R. Forrest , Robert A. Lieberman , Richard L. Panock
IPC分类号： G02B6/42 , H04B10/24 , H04B9/00 , A61B5/02 , C12M1/34
CPC分类号： H04B10/40 , G02B6/4204
摘要： A bidirectional fiber optic system is described in which at one terminal the output radiation of a light source (LED or semiconductor laser) is coupled through a small diameter hole in the active area of a photodiode into the core of a larger diameter transmission fiber. On the other hand, radiation propagating through the fiber in the opposite direction exits from the fiber with a large numerical aperture so that most of it is incident on the active area of the photodiode and little is lost through the hole. Also described are a number of photodiode configurations for use in such a system, as well as dual photodiodes to perform both signal detection and output monitoring functions. Further described are fiber optic sensing systems for monitoring such variables as blood pressure.
摘要翻译：描述了一种双向光纤系统，其中在一个端子处，光源（LED或半导体激光器）的输出辐射通过光电二极管的有源区域中的小直径孔耦合到较大直径的传输光纤的芯中。另一方面，沿着相反方向通过光纤传播的辐射从具有大数值孔径的光纤中退出，使得其大部分入射到光电二极管的有源区域上，并且几乎不会通过孔而损失。还描述了用于这种系统的多个光电二极管配置以及执行信号检测和输出监视功能的双光电二极管。进一步描述的是用于监测诸如血压的变量的光纤传感系统。

4. 发明授权

US4493113A Bidirectional fiber optic transmission systems and photodiodes for use in such systems 失效
标题翻译：用于这种系统的双向光纤传输系统和光电二极管
公开(公告)号：US4493113A
公开(公告)日：1985-01-08
申请号：US416467
申请日：1982-09-10
申请人： Stephen R. Forrest , Richard L. Panock
发明人： Stephen R. Forrest , Richard L. Panock
IPC分类号： G02B6/42 , H04B10/24 , H04B9/00
CPC分类号： H04B10/40 , G02B6/4204 , G02B6/421 , G02B6/4246
摘要： A single-wavelength, bidirectional fiber optic transmission system is described in which at each terminal the output radiation of a light source (LED or semiconductor laser) is coupled through a small diameter hole in the active area of a photodiode into the core of a larger diameter transmission fiber. On the other hand, radiation propagating through the fiber in the opposite direction exits from the fiber with a large NA so that most of it is incident on the active area of the photodiode and little is lost through the hole. Also described are a number of photodiode configurations for use in such a system, as well as dual photodiodes to perform both signal detection and output monitoring functions.
摘要翻译：描述了单波长双向光纤传输系统，其中在每个端子处，光源（LED或半导体激光器）的输出辐射通过光电二极管的有源区域中的小直径孔耦合到较大的核心中直径传输光纤。另一方面，沿相反方向传播通过光纤的辐射以大的NA离开纤维，使得其大部分入射到光电二极管的有源区域上，并且几乎不通过孔而损失。还描述了用于这种系统的多个光电二极管配置以及执行信号检测和输出监视功能的双光电二极管。

5. 发明授权

US09793481B2 Patterning by stamped metal resist 有权
公开(公告)号：US09793481B2
公开(公告)日：2017-10-17
申请号：US12331062
申请日：2008-12-09
申请人： Stephen R. Forrest , Momchil T. Mihnev , Andre D. Taylor , Xin Xu
发明人： Stephen R. Forrest , Momchil T. Mihnev , Andre D. Taylor , Xin Xu
IPC分类号： H01L51/00
CPC分类号： H01L51/0021
摘要： A method is provided. A first layer is provided over a substrate, the first layer comprising a first material. A patterned second layer is applied over the first layer via stamping. The second layer comprising a second material. The second layer covers a first portion of the first layer, and does not cover a second portion of the first layer. The second portion of the first layer is removed via a subtractive process while the first portion of the first layer is protected from removal by the patterned second layer.

6. 发明授权

US09496315B2 Top-gate bottom-contact organic transistor 有权
标题翻译：顶栅底接触有机晶体管
公开(公告)号：US09496315B2
公开(公告)日：2016-11-15
申请号：US12859496
申请日：2010-08-19
申请人： Stephen R. Forrest , Xin Xu , Christopher Kyle Renshaw
发明人： Stephen R. Forrest , Xin Xu , Christopher Kyle Renshaw
IPC分类号： H01L51/44 , H01L27/30 , B82Y10/00 , H01L27/28 , H01L51/10 , H01L51/00 , H01L51/05 , H01L51/42
CPC分类号： H01L27/307 , B82Y10/00 , H01L27/283 , H01L51/0046 , H01L51/0078 , H01L51/0541 , H01L51/105 , H01L51/424
摘要： Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.
摘要翻译：提供了顶栅，底接触有机薄膜晶体管。晶体管可以包括金属双层电极，以帮助器件内的电荷移动。在一个实施例中，有机晶体管包括设置在衬底的第一区域上的漏电极和源电极，设置在漏电极和源电极上并与漏电极和源电极直接物理接触的过渡金属氧化物层，有机优先导孔沟道层设置在金属氧化物之上，并且在漏电极和源电极之间，以及设置在沟道上的栅电极。

7. 发明申请

US20160254101A1 ORGANIC PHOTOSENSITIVE DEVICES WITH EXCITON-BLOCKING CHARGE CARRIER FILTERS 审中-公开
标题翻译：有机吸收载体过滤器的有机感光装置
公开(公告)号：US20160254101A1
公开(公告)日：2016-09-01
申请号：US15030881
申请日：2014-10-27
申请人： Stephen R. FORREST , Xin XIAO , Kevin BERGEMANN , Anurag PANDA , Jeramy D. ZIMMERMAN , Brian E. LASSITER , Mark E. THOMPSON , Andrew N. BARTYNSKI , Cong THINH , Xiaozhou CHE
发明人： Stephen R. Forrest , Xin Xiao , Jeramy D. Zimmerman , Kevin Bergemann , Anurag Panda , Brian E. Lassiter , Mark E. Thompson , Andrew N. Bartynski , Cong Trinh , Xiaozhou Che
IPC分类号： H01G9/20 , H01L31/0216
CPC分类号： H01L51/4273 , H01L51/0046 , H01L51/4246 , H01L2251/308 , Y02E10/549
摘要： Disclosed herein are organic photosensitive devices including a first subcell and a second subcell and having at least one exciton-blocking charge carrier filter disposed between the subcells. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
摘要翻译：本文公开了包括第一子电池和第二子电池并且具有设置在子电池之间的至少一个激子阻挡电荷载流子过滤器的有机光敏器件。过滤器包括至少一个宽能隙材料和至少一个电子或空穴传导材料的混合物。如本文所述，滤光器同时阻止激子并传导所需的电荷载流子（电子或空穴）。

8. 发明授权

US08987589B2 Architectures and criteria for the design of high efficiency organic photovoltaic cells 有权
标题翻译：高效有机光伏电池设计的架构和标准
公开(公告)号：US08987589B2
公开(公告)日：2015-03-24
申请号：US11486163
申请日：2006-07-14
申请人： Barry Rand , Stephen R. Forrest , Diana Pendergrast Burk
发明人： Barry Rand , Stephen R. Forrest , Diana Pendergrast Burk
IPC分类号： H01L31/0256 , H01L51/42 , B82Y10/00 , H01L27/30 , H01L51/00
CPC分类号： H01L51/4246 , B82Y10/00 , H01L27/302 , H01L51/0046 , H01L51/0071 , H01L51/0072 , H01L51/0078 , H01L51/4253 , Y02E10/549
摘要： An organic photovoltaic cell includes an anode and a cathode, and a plurality of organic semiconductor layers between the anode and the cathode. At least one of the anode and the cathode is transparent. Each two adjacent layers of the plurality of organic semiconductor layers are in direct contact. The plurality of organic semiconductor layers includes an intermediate layer consisting essentially of a photoconductive material, and two sets of at least three layers. A first set of at least three layers is between the intermediate layer and the anode. Each layer of the first set consists essentially of a different organic semiconductor material having a higher LUMO and a higher HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the cathode. A second set of at least three layers is between the intermediate layer and the cathode. Each layer of the second set consists essentially of a different organic semiconductor material having a lower LUMO and a lower HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the anode.
摘要翻译：有机光伏电池包括阳极和阴极，以及在阳极和阴极之间的多个有机半导体层。阳极和阴极中的至少一个是透明的。多个有机半导体层中的每两相邻层直接接触。多个有机半导体层包括基本上由光电导材料组成的中间层和两组至少三层。中间层和阳极之间至少有三层的第一组。相对于更靠近阴极的多个有机半导体层的相邻层的材料，第一组的每个层基本上由具有较高LUMO和较高HOMO的不同有机半导体材料组成。第二组至少三层在中间层和阴极之间。相对于更靠近阳极的多个有机半导体层的相邻层的材料，第二组的每个层基本上由具有较低LUMO和较低HOMO的不同有机半导体材料组成。

9. 发明授权

US08816332B2 Organic photovoltaic cell incorporating electron conducting exciton blocking layers 有权
标题翻译：掺有电子传导激子阻挡层的有机光伏电池
公开(公告)号：US08816332B2
公开(公告)日：2014-08-26
申请号：US13400963
申请日：2012-02-21
申请人： Stephen R. Forrest , Brian E. Lassiter
发明人： Stephen R. Forrest , Brian E. Lassiter
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： B82Y10/00 , H01L51/0046 , H01L51/0047 , H01L51/0053 , H01L51/006 , H01L51/0078 , H01L51/4246 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.
摘要翻译：本公开涉及包括位于受主材料和阴极之间的化合物阻挡层的光敏光电子器件，所述化合物阻挡层包括：至少一种电子传导材料和至少一个宽间隙电子传导激子阻挡层。例如，当介于受体层和阴极之间时，3,4,9,10苝四羧酸双苯并咪唑（PTCBI）和1,4,5,8-四羧酸二酐（NTCDA）作为电子传导和激子阻断层发挥作用。这两种材料都是高效的电子导体，导致高达0.70的填充因子。与使用传统阻挡层的类似器件相比，通过使用NTCDA / PTCBI化合物阻挡层结构提高了功率转换效率，所示的传统阻挡层通过损伤诱导的中间隙状态传导电子。

10. 发明授权

US08637345B2 Methods of fabricating devices by low pressure cold welding 有权
标题翻译：低压冷焊制造装置的方法
公开(公告)号：US08637345B2
公开(公告)日：2014-01-28
申请号：US13525539
申请日：2012-06-18
申请人： Changsoon Kim , Stephen R. Forrest
发明人： Changsoon Kim , Stephen R. Forrest
IPC分类号： H01L51/40
CPC分类号： H01L51/0022 , B33Y10/00 , H01L51/0004 , H01L51/0516 , H01L51/0545
摘要： Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.
摘要翻译：提供了将金属和/或有机层从图案化的印模，优选软的弹性体印模转移到基底的方法。图案化的金属或有机层可以用于例如广泛的电子器件中。本发明的方法特别适用于有机电子元件的纳米尺度图案化。

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