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    • 5. 发明授权
    • Compensation for temperature and voltage effects when monitoring parameters in a transceiver module
    • 在监视收发模块中的参数时,对温度和电压的影响进行补偿
    • US07634197B2
    • 2009-12-15
    • US11330863
    • 2006-01-12
    • Stephen NelsonKishore Kamath
    • Stephen NelsonKishore Kamath
    • H01J7/24G01J1/44
    • H04B10/504H04B10/40H04B10/58
    • A method for calibrating the calculation of a laser power measurement with respect to specified operational and/or environmental parameters in an optoelectronic device, such as an optical transceiver module having a laser diode, is disclosed. In particular, the method includes sensing analog data that relates to light emission from the laser diode using a monitor photodiode disposed in the optical transceiver module. Additional sensors are then used to sense analog data that relates to the temperature and voltage of the monitor photodiode. The analog data is converted into digital data, then a formulaic relationship that relates the light emission data to the temperature and voltage data is used to calculate the laser power of the laser diode. Calibration by this method accounts for unintended effects caused by temperature and voltage fluctuations in the optical transceiver module.
    • 公开了一种用于校准关于光电子器件(例如具有激光二极管的光收发器模块)中的指定操作和/或环境参数的激光功率测量的计算的方法。 特别地,该方法包括使用设置在光收发器模块中的监视光电二极管来感测与激光二极管发光有关的模拟数据。 然后使用附加的传感器来感测与监视器光电二极管的温度和电压有关的模拟数据。 将模拟数据转换为数字数据,然后将发光数据与温度和电压数据相关联的公式关系用于计算激光二极管的激光功率。 通过这种方法进行校准可以解决光收发模块温度和电压波动引起的意外影响。
    • 6. 发明授权
    • Optical transceiver module end of life indication
    • 光收发模块寿命终止指示
    • US07835642B2
    • 2010-11-16
    • US11324982
    • 2006-01-03
    • Stephen NelsonKishore Kamath
    • Stephen NelsonKishore Kamath
    • H04B10/06
    • H04B10/40
    • An optoelectronic device that uses microcode to perform an end of life calculation for a laser in the optoelectronic device is disclosed. In particular, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for the laser based one on or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can further provide a result in a format which is useful to a host system with which the device is connected.
    • 公开了一种使用微代码来执行光电子器件中的激光器寿命计算的光电子器件。 特别地,光电器件在器件操作期间在变化的条件下感测环境和操作参数。 然后,光电子器件基于或多于感测的环境和/或操作参数来计算激光器的寿命终止。 可以实时计算并使用数字逻辑。 该计算可以进一步提供对与设备连接的主机系统有用的格式的结果。
    • 10. 发明申请
    • DOPING OF SEMICONDUCTOR LAYER FOR IMPROVED EFFICIENCY OF SEMICONDUCTOR STRUCTURES
    • 用于提高半导体结构效率的半导体层的掺杂
    • US20100276785A1
    • 2010-11-04
    • US12433583
    • 2009-04-30
    • Kishore KamathAlan R. DAVIESAnders OLSSON
    • Kishore KamathAlan R. DAVIESAnders OLSSON
    • H01L29/22H01L29/36
    • H01L31/073H01L31/02963Y02E10/543
    • A system and method for variable doping within a semiconductor structure for improved efficiency is described. One embodiment includes a semiconductor structure comprising a first semiconductor layer comprising a first semiconductor material, and a second semiconductor layer comprising a second semiconductor material, wherein the second semiconductor material is an oppositely-typed semiconductor material from the first semiconductor material, and wherein the second semiconductor layer comprises a first region adjacent to the first semiconductor layer, wherein the first region comprises low-doped second semiconductor material, and a second region adjacent to the first region, wherein the second region comprises highly-doped second semiconductor material to increase a built-in potential of the semiconductor structure.
    • 描述了用于提高效率的半导体结构内的可变掺杂的系统和方法。 一个实施例包括半导体结构,其包括包含第一半导体材料的第一半导体层和包括第二半导体材料的第二半导体层,其中第二半导体材料是与第一半导体材料相反类型的半导体材料,并且其中第二半导体层 半导体层包括与第一半导体层相邻的第一区域,其中第一区域包括低掺杂的第二半导体材料和与第一区域相邻的第二区域,其中第二区域包括高掺杂的第二半导体材料以增加构建的 在半导体结构的潜力。