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    • 6. 发明申请
    • Aperiodic dielectric multilayer stack
    • 非周期介电多层叠层
    • US20050266218A1
    • 2005-12-01
    • US10857747
    • 2004-06-01
    • Peter PeumansStephen Forrest
    • Peter PeumansStephen Forrest
    • H01L51/52H01S5/00
    • H01L51/5265Y10T428/24975
    • A structure is provided that includes an aperiodic dielectric stack. The structure may include a substrate, a device disposed over the substrate, and a first dielectric stack disposed between the substrate and the device. The first dielectric stack includes a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, as well as a plurality of layers comprising a second dielectric material. The average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. The substrate may have a treated surface such that light that may otherwise be waveguided in the substrate is outcoupled into air, and the average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 10% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. The structure may include an optical cavity defined by a first end layer and a second end layer, where the first end layer further comprising a first dielectric stack having a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, and a plurality of layers comprising a second dielectric material. An optoelectronic device having a first active layer may be disposed within the optical cavity.
    • 提供了包括非周期性电介质叠层的结构。 该结构可以包括衬底,设置在衬底上的器件以及设置在衬底和器件之间的第一电介质叠层。 第一电介质堆叠包括多个包括第一介电材料的层,其中包括第一电介质材料的至少两个层具有基本上不同的厚度,以及包括第二电介质材料的多个层。 在至少300nm的带宽上,器件在空气中的平均输出耦合效率可以比设置在不具有第一介电叠层的结构中的其它相同器件的平均输出耦合效率高至少40%。 衬底可以具有经处理的表面,使得否则可以在衬底中波导的光被外耦合到空气中,并且在至少300nm的带宽上的器件空气中的平均输出耦合效率可以比至少300nm的带宽的平均输出耦合效率高至少10% 设置在没有第一电介质堆叠的结构中的另外相同的装置。 该结构可以包括由第一端层和第二端层限定的光学腔,其中第一端层还包括具有包括第一电介质材料的多个层的第一电介质叠层,其中至少两层包括 第一电介质材料具有基本上不同的厚度,以及包括第二电介质材料的多个层。 具有第一有源层的光电器件可以设置在光腔内。
    • 7. 发明授权
    • Aperiodic dielectric multilayer stack
    • 非周期介电多层叠层
    • US07196835B2
    • 2007-03-27
    • US10857747
    • 2004-06-01
    • Peter PeumansStephen Forrest
    • Peter PeumansStephen Forrest
    • G02F1/03
    • H01L51/5265Y10T428/24975
    • A structure is provided that includes an aperiodic dielectric stack. The structure may include a substrate, a device disposed over the substrate, and a first dielectric stack disposed between the substrate and the device. The first dielectric stack includes a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, as well as a plurality of layers comprising a second dielectric material. The average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack.
    • 提供了包括非周期性电介质叠层的结构。 该结构可以包括衬底,设置在衬底上的器件以及设置在衬底和器件之间的第一电介质叠层。 第一电介质堆叠包括多个包括第一介电材料的层,其中包括第一电介质材料的至少两个层具有基本上不同的厚度,以及包括第二电介质材料的多个层。 在至少300nm的带宽上,器件在空气中的平均输出耦合效率可以比设置在不具有第一介电叠层的结构中的其它相同器件的平均输出耦合效率高至少40%。
    • 8. 发明申请
    • Organic triodes with novel grid structures and method of production
    • US20050196895A1
    • 2005-09-08
    • US11114715
    • 2005-04-25
    • Marc BaldoPeter PeumansStephen ForrestChangsoon Kim
    • Marc BaldoPeter PeumansStephen ForrestChangsoon Kim
    • H01L27/28H01L51/40H01L29/08
    • H01L51/0504H01L27/28H01L51/0508
    • An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.
    • 10. 发明授权
    • Organic triodes with novel grid structures and method of production
    • 具有新型网格结构和生产方法的有机三极管
    • US07943419B2
    • 2011-05-17
    • US12241382
    • 2008-09-30
    • Marc BaldoPeter PeumansStephen ForrestChangsoon Kim
    • Marc BaldoPeter PeumansStephen ForrestChangsoon Kim
    • H01L51/40C23C14/02
    • H01L51/0504H01L27/28H01L51/0508
    • An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.
    • 提供有机半导体器件。 该器件具有第一电极和第二电极,其中有机半导体层设置在第一和第二电极之间。 导电栅格设置在有机半导体层内,其具有存在有机半导体层的开口。 至少一个绝缘层邻近导电栅格设置,优选地使得导电栅格通过绝缘层与有机半导体层完全分离。 还提供了制造器件,特别是导电栅格的方法。 在一种方法中,在带有图案的模具的导电层中形成开口,然后将其去除。 在另一种方法中,通过掩模蚀刻导电层和第一绝缘层以暴露第一电极的部分。 在另一种方法中,图案化的管芯被压入第一有机半导体层以在第一有机半导体层的表面中产生纹理,然后除去。 然后将导电材料从角度沉积到第一有机半导体层上,以形成由于纹理表面和角度沉积而具有开口的栅格。 在每种方法中,优选在该工艺期间沉积或以其它方式形成绝缘层,以使导电层与先前和随后沉积的有机半导体层完全分离。