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1. 发明申请

US20110006040A1 Methods for Plasma Processing 有权
标题翻译：等离子体处理方法
公开(公告)号：US20110006040A1
公开(公告)日：2011-01-13
申请号：US12832934
申请日：2010-07-08
申请人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
发明人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23F1/00 , H05H1/24 , B05D1/36
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

2. 发明申请

US20110005682A1 Apparatus for Plasma Processing 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20110005682A1
公开(公告)日：2011-01-13
申请号：US12832953
申请日：2010-07-08
申请人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
发明人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23F1/08
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

3. 发明申请

US20120225218A1 APPARATUS AND METHOD FOR DIELECTRIC DEPOSITION 有权
标题翻译：电介质沉积的装置和方法
公开(公告)号：US20120225218A1
公开(公告)日：2012-09-06
申请号：US13347598
申请日：2012-01-10
申请人： Stephen Edward Savas , Sai Mantripragada , Sooyun Joh , Allan B. Wiesnoski , Carl Galewski
发明人： Stephen Edward Savas , Sai Mantripragada , Sooyun Joh , Allan B. Wiesnoski , Carl Galewski
IPC分类号： C23C16/503 , C23C16/26 , C23C16/24 , C23C16/509 , C23C16/06
CPC分类号： C23C16/503 , C23C16/45574 , C23C16/45578 , C23C16/509 , C23C16/54 , C23C16/545 , H01J37/32036 , H01J37/32532
摘要： The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.
摘要翻译：所公开的发明包括可以用于在非常低的缺陷密度的非常低的温度下在分离的或连续的纸幅基材上等离子体沉积薄层材料的装置和方法。通过控制气体组分的引入顺序，可以实现气相化学的优异控制。它还对气体中的化学过程速率和离子轰击的功率和能量的量具有实质上独立的控制。这种控制使得高质量的单层和多层薄膜能够在非常低的温度条件下成本有效且均匀地沉积在较大的区域上。

4. 发明申请

US20110005681A1 Plasma Generating Units for Processing a Substrate 审中-公开
标题翻译：用于处理基板的等离子体发生单元
公开(公告)号：US20110005681A1
公开(公告)日：2011-01-13
申请号：US12832947
申请日：2010-07-08
申请人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
发明人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23F1/08 , C23C16/00 , C23C16/50
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

5. 发明授权

US10049859B2 Plasma generating units for processing a substrate 有权
公开(公告)号：US10049859B2
公开(公告)日：2018-08-14
申请号：US12832947
申请日：2010-07-08
申请人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
发明人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23C16/24 , C23C16/26 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/54 , H01J37/32 , H01L21/67
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

6. 发明授权

US08765232B2 Apparatus and method for dielectric deposition 有权
标题翻译：电介质沉积的设备和方法
公开(公告)号：US08765232B2
公开(公告)日：2014-07-01
申请号：US13347598
申请日：2012-01-10
申请人： Stephen Edward Savas , Sai Mantripragada , Sooyun Joh , Allan B. Wiesnoski , Carl Galewski
发明人： Stephen Edward Savas , Sai Mantripragada , Sooyun Joh , Allan B. Wiesnoski , Carl Galewski
IPC分类号： C23F1/00 , H05H1/24
CPC分类号： C23C16/503 , C23C16/45574 , C23C16/45578 , C23C16/509 , C23C16/54 , C23C16/545 , H01J37/32036 , H01J37/32532
摘要： The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.
摘要翻译：所公开的发明包括可以用于在非常低的缺陷密度的非常低的温度下在分离的或连续的纸幅基材上等离子体沉积薄层材料的装置和方法。通过控制气体组分的引入顺序，可以实现气相化学的优异控制。它还对气体中的化学过程速率和离子轰击的功率和能量的量具有实质上独立的控制。这种控制使得高质量的单层和多层薄膜能够在非常低的温度条件下成本有效且均匀地沉积在较大的区域上。

7. 发明授权

US08697197B2 Methods for plasma processing 有权
标题翻译：等离子体处理方法
公开(公告)号：US08697197B2
公开(公告)日：2014-04-15
申请号：US12832934
申请日：2010-07-08
申请人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
发明人： Stephen Edward Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23C16/503
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

8. 发明授权

US06758591B1 Mixing of materials in an integrated circuit manufacturing equipment 有权
标题翻译：在集成电路制造设备中混合材料
公开(公告)号：US06758591B1
公开(公告)日：2004-07-06
申请号：US10104710
申请日：2002-03-22
申请人： Peter Krotov , Colin F. Smith , Randy Hall , Sooyun Joh
发明人： Peter Krotov , Colin F. Smith , Randy Hall , Sooyun Joh
IPC分类号： B01F1302
CPC分类号： C23C16/45512 , B01F5/0068 , C23C16/4481
摘要： In one embodiment, a mixing device includes a nozzle that is disposed tangent to a wall of a chamber. Gas flowing from the nozzle rotates in the chamber forming a vortex. Another gas may be flown near a middle portion of the chamber, thereby uniformly mixing the two gases. In another embodiment, an evaporation and mixing device includes a nozzle configured to impart rotation to a gas flowing into a chamber. An injector flows a liquid material near a middle portion of the chamber, thereby mixing the gas and the liquid material. A heater may be employed to help evaporate the liquid material.
摘要翻译：在一个实施例中，混合装置包括与腔的壁相切设置的喷嘴。从喷嘴流出的气体在室内旋转形成涡流。另外的气体可以在室的中间部分附近流动，从而均匀地混合两种气体。在另一个实施例中，蒸发和混合装置包括被配置为向流入室中的气体赋予旋转的喷嘴。喷射器在室的中间部分附近流动液体材料，从而混合气体和液体材料。可以使用加热器来帮助蒸发液体材料。

9. 发明申请

US20130279643A1 Steam Generator for a Nuclear Reactor 有权
公开(公告)号：US20130279643A1
公开(公告)日：2013-10-24
申请号：US13451759
申请日：2012-04-20
申请人： John T. Groome , Sooyun Joh , James Allan Nylander
发明人： John T. Groome , Sooyun Joh , James Allan Nylander
IPC分类号： G21C15/16
CPC分类号： G21C15/16 , F22B1/162 , G21C1/322 , G21D1/006 , Y02E30/40
摘要： A steam generator for a nuclear reactor comprises plenums proximate with a first plane, wherein the first plane intersects a bottom portion of a riser column of a reactor vessel. The steam generator may further comprise plenums proximate with a second plane, approximately parallel with the first plane, wherein the second plane intersects a top portion of the riser column of the reactor vessel. The steam generator may further include a plurality of steam generator tubes that convey coolant from a plenum located proximate with the first plane to one of the plenums proximate with the second plane.

10. 发明授权

US08291935B1 Flexible gas mixing manifold 有权
标题翻译：柔性气体混合歧管
公开(公告)号：US08291935B1
公开(公告)日：2012-10-23
申请号：US12384623
申请日：2009-04-07
申请人： Neil J. Merritt , Kevin D. Jennings , George A. Gilbert , David E. Bowser , Sooyun Joh
发明人： Neil J. Merritt , Kevin D. Jennings , George A. Gilbert , David E. Bowser , Sooyun Joh
IPC分类号： F16K11/20
CPC分类号： F16K27/003 , H01L21/67017 , Y10T137/87249 , Y10T137/8766
摘要： Each of plurality of gas sources flows to a different one of a plurality of separate source gas flow paths. Then, a source gas is distributed directly from each of plurality of separate source gas flow paths to a plurality of separate gas mixture flow paths, thereby distributing a plurality of source gases to each of different flow paths. A plurality of separate gas mixture streams is generated by flowing a plurality of source gases in each of a plurality of separate gas mixture flow paths. In some embodiments, each of a plurality of separate source gas flow paths comprises a gas distribution duct, and each of a plurality of gas mixture flow paths comprises a gas mixing conduit. In some embodiments, a gas distribution duct includes a plurality of gas distribution ports and a gas source port connectable to a gas source. In some embodiments, a gas mixing conduit comprises a plurality of gas inlet holes, a gas mixing region, and a gas outlet hole. Each of the gas inlet holes is connectable to a gas distribution duct and is operable to conduct a source gas into the gas mixing region. A plurality of gases is mixed in the mixing region to form a gas mixture. A gas manifold is operable to mix a plurality of source gases in a plurality of gas mixing conduits to generate a plurality of gas mixtures having different gas compositions and flow rates.
摘要翻译：多个气体源中的每一个流到多个单独的源气体流动路径中的不同的一个。然后，源气体从多个单独的源气体流动路径中的每一个直接分配到多个单独的气体混合物流动路径，从而将多个源气体分配到每个不同的流动路径。通过在多个单独的气体混合物流动路径中的每一个中流动多个源气体来产生多个单独的气体混合物流。在一些实施例中，多个单独的源气体流动路径中的每一个包括气体分配管道，并且多个气体混合物流动路径中的每一个包括气体混合管道。在一些实施例中，气体分配管道包括多个气体分配端口和可连接到气体源的气体源端口。在一些实施例中，气体混合管道包括多个气体入口孔，气体混合区域和气体出口孔。每个气体入口孔可连接到气体分配管道，并且可操作以将源气体导入气体混合区域。在混合区域中混合多种气体以形成气体混合物。气体歧管可操作以混合多个气体混合管道中的多个源气体，以产生具有不同气体组成和流速的多个气体混合物。

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