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    • 3. 发明授权
    • Process for preparing vinyl chlorosilanes
    • 制备乙烯基氯硅烷的方法
    • US06291698B1
    • 2001-09-18
    • US09556403
    • 2000-04-24
    • Stefan BadeBernt KesperRobert KoellHartwig RaulederUwe Schoen
    • Stefan BadeBernt KesperRobert KoellHartwig RaulederUwe Schoen
    • C07F708
    • C07F7/122
    • The invention relates to a process for preparing vinyl chlorosilanes, that includes thermally and non-catalytically reacting chlorosilane with vinyl chloride at a temperature of 550 to 700° C. by flowing the chlorosilane and vinyl chloride through a ring-gap space in a ring-gap reactor to produce a reaction gas; the ring-gap space having a cross-sectional area and a volume; and, after the flowing, further reacting, adiabatically, the reaction gas in a second zone to produce a hot reaction gas that contains vinylchiorosilane; wherein the second zone has a cross-sectional area that is greater than the cross-sectional area of the ring-gap space; and wherein the second zone has a volume that is in a ratio to the volume of the ring-gap space of 0.15:1 to 1.5:1. The invention also provides an apparatus for carrying out the above process.
    • 本发明涉及一种制备乙烯基氯硅烷的方法,其包括在550-700℃的温度下使氯代硅烷与氯乙烯进行热和非催化反应,通过使氯代硅烷和氯乙烯通过环 - 间隙反应器产生反应气体; 所述环间隙具有横截面积和体积; 并且在流动之后,绝热地将第二区中的反应气体进行反应,以产生含有乙烯基氯硅烷的热反应气体; 其中所述第二区域具有大于所述环形间隙的横截面面积的横截面面积; 并且其中所述第二区域具有与所述环隙空间的体积的比率为0.15:1至1.5:1的体积。 本发明还提供一种用于执行上述过程的装置。