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1. 发明授权

US07216045B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07216045B2
公开(公告)日：2007-05-08
申请号：US10162516
申请日：2002-06-03
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

2. 发明申请

US20070198211A1 Selection of wavelengths for integrated circuit optical metrology 有权
公开(公告)号：US20070198211A1
公开(公告)日：2007-08-23
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01B11/02
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

3. 发明授权

US07474993B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07474993B2
公开(公告)日：2009-01-06
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

4. 发明授权

US07394554B2 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US07394554B2
公开(公告)日：2008-07-01
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/00
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology.To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

5. 发明申请

US20050057748A1 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US20050057748A1
公开(公告)日：2005-03-17
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srini Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srini Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/24 , G01B11/30 , G01N21/00 , G01N21/17 , G01N21/84 , G01N21/956 , G01R31/26 , G06F19/00 , H01L21/02 , H01L21/66
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

6. 发明授权

US06608686B1 Measurement of metal electroplating and seed layer thickness and profile 有权
标题翻译：金属电镀和种子层厚度和型材的测量
公开(公告)号：US06608686B1
公开(公告)日：2003-08-19
申请号：US10022035
申请日：2001-12-13
申请人： Lawrence Lane , Nickhil Jakatdar , Xinhui Niu
发明人： Lawrence Lane , Nickhil Jakatdar , Xinhui Niu
IPC分类号： G01B1100
CPC分类号： G01B11/0616
摘要： A method and system for measuring metal electroplating barrier and seed layer thickness and profile. Using optical metrology, profiles of post-barrier deposition grating and post-seed deposition grating can be measured non-destructively. In turn, the thickness and profile of the barrier layer can be determined by subtracting the profile of the post-barrier deposition grating from the profile of the substrate damascene grating. Similarly, the thickness and profile of the seed layer can be determined by subtracting the profile of the post-seed deposition gratin from the profile of the post-barrier deposition grating.
摘要翻译：用于测量金属电镀屏障和种子层厚度和型材的方法和系统。使用光学测量，可以非破坏性地测量后阻挡沉积光栅和种子后沉积光栅的轮廓。反过来，阻挡层的厚度和轮廓可以通过从衬底镶嵌光栅的轮廓中减去后阻挡沉积光栅的轮廓来确定。类似地，种子层的厚度和轮廓可以通过从后阻挡沉积光栅的轮廓中减去后种子沉积格拉丁的轮廓来确定。

7. 发明申请

US20070225851A1 Optical metrology model optimization for process control 有权
标题翻译：用于过程控制的光学计量模型优化
公开(公告)号：US20070225851A1
公开(公告)日：2007-09-27
申请号：US11804998
申请日：2007-05-21
申请人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
发明人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
IPC分类号： G06F19/00
CPC分类号： G03F7/70616 , G01B11/24 , G03F7/70491 , G03F7/705 , G03F7/70625
摘要： To evaluate the adequacy of a profile model, an initial profile model is selected. The profile model includes profile model parameters to be measured in implementing types of process control to be used in controlling a fabrication process. A measurement of profile model parameters is obtained using a first metrology tool and the profile model. A measurement of the profile model parameters is obtained using a second metrology tool and the profile model. Statistical metric criteria are calculated based on the measurements of the profile model parameters obtained using the first and second metrology tools. When the calculated statistical metric criteria are not within matching requirements, the profile model is revised. When the calculated statistical metric criteria are within matching requirements, the profile model or the revised profile model is stored.
摘要翻译：为了评估轮廓模型的适合性，选择初始轮廓模型。轮廓模型包括在实施用于控制制造过程的过程控制的类型中要测量的轮廓模型参数。使用第一个计量工具和轮廓模型获得轮廓模型参数的测量。使用第二计量工具和轮廓模型获得轮廓模型参数的测量。基于使用第一和第二计量工具获得的轮廓模型参数的测量来计算统计度量标准。当计算的统计度量标准不在匹配要求中时，修改轮廓模型。当计算的统计度量标准在匹配要求内时，将存储配置文件模型或修订的配置文件模型。

8. 发明授权

US07221989B2 Optical metrology model optimization for process control 有权
标题翻译：用于过程控制的光学计量模型优化
公开(公告)号：US07221989B2
公开(公告)日：2007-05-22
申请号：US11472133
申请日：2006-06-20
申请人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
发明人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
IPC分类号： G06F19/00
CPC分类号： G03F7/70616 , G01B11/24 , G03F7/70491 , G03F7/705 , G03F7/70625
摘要： To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.
摘要翻译：为了评估轮廓模型的适合性，选择用于控制制造过程的一种或多种类型的过程控制。选择轮廓模型参数和轮廓模型参数的可接受范围。选择第一和第二计量工具。设定使用第一和第二工具获得的测量中可接受的变化量的统计度量标准。选择一个配置文件模型。使用第一个工具和所选的轮廓模型获得轮廓模型参数的测量。使用第二工具获得一个或多个轮廓模型参数的测量。基于使用第一和第二工具获得的一个或多个轮廓模型参数的测量来计算统计度量标准。将计算和设置的统计度量标准进行比较，以评估所选配置文件模型的适用性。

9. 发明申请

US20060009872A1 Optical metrology model optimization for process control 失效
公开(公告)号：US20060009872A1
公开(公告)日：2006-01-12
申请号：US10888726
申请日：2004-07-08
申请人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
发明人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
IPC分类号： G06F19/00
CPC分类号： G03F7/70616 , G01B11/24 , G03F7/70491 , G03F7/705 , G03F7/70625
摘要： To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

10. 发明申请

US20060247816A1 Optical metrology model optimization for process control 有权
公开(公告)号：US20060247816A1
公开(公告)日：2006-11-02
申请号：US11472133
申请日：2006-06-20
申请人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
发明人： Dan Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
IPC分类号： G06F19/00
CPC分类号： G03F7/70616 , G01B11/24 , G03F7/70491 , G03F7/705 , G03F7/70625
摘要： To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

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