专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06335279B1 Method of forming contact holes of semiconductor device 有权
公开(公告)号：US06335279B1
公开(公告)日：2002-01-01
申请号：US09739211
申请日：2000-12-19
申请人： Soon Moon Jung , Sung Bong Kim , Joo Young Kim
发明人： Soon Moon Jung , Sung Bong Kim , Joo Young Kim
IPC分类号： H01L2144
摘要： A method of forming contact holes of a semiconductor device wherein process yield is improved and manufacturing processes can be simplified. First, a plurality of gate electrodes provided with a plurality of spacers are formed on an active region of a semiconductor substrate that is separated into the active region and a field region by a field oxide layer. Then, the outermost spacers are removed from the plurality of spacers, to ensure a space for a first contact hole on the semiconductor substrate. Next, an etch stopping layer and an interlayer dielectric are subsequently formed on the semiconductor substrate. By etching the interlayer dielectric and the etch stopping layer subsequently, the first contact hole is formed by exposing a first surface of the semiconductor substrate between the gate electrodes and a second contact hole is formed by exposing a second surface of the semiconductor substrate which includes a portion of a surface of the field oxide layer and a portion of the semiconductor substrate near the field oxide layer, simultaneously. A manufacturing process of the semiconductor device can thus be simplified by forming contact holes simultaneously, using a self aligned contact method in which a first contact hole is formed by using a plurality of spacers and using a borderless contact method in which the second contact hole is formed from a side portion of the gate electrode to a portion of a field region.

2. 发明授权

US08248853B2 Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line 有权
标题翻译：通过对所选择的字线施加比毗邻所选字线的字线更高的电压电平来对非易失性闪存器件进行编程的方法
公开(公告)号：US08248853B2
公开(公告)日：2012-08-21
申请号：US12590701
申请日：2009-11-12
申请人： Jae Duk Lee , Soon Moon Jung , Jung Dal Choi
发明人： Jae Duk Lee , Soon Moon Jung , Jung Dal Choi
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C16/3427
摘要： In a method of programming a non-volatile memory device, a first voltage is applied to a selected word line corresponding to a selected memory cell transistor of a selected transistor string to be programmed; a second voltage is applied to a neighboring word line neighboring the selected word line and corresponding to a neighboring transistor of the selected transistor string, wherein the first voltage is greater than the second voltage, the application of the first and second voltages to the selected and neighboring word lines respectively causing electrons to be generated by an electric field formed between the neighboring transistor and the selected memory cell transistor, the electrons accelerating toward the selected memory cell transistor and injecting into a charge storage layer of the selected memory cell transistor; wherein the neighboring transistor is positioned between the selected memory cell transistor and one of a ground select transistor and a string select transistor, and the first voltage is applied to unselected word lines corresponding to unselected memory cell transistors of the selected transistor string positioned between the selected memory cell transistor and the other of the ground select transistor and the string select transistor.
摘要翻译：在编程非易失性存储器件的方法中，将第一电压施加到对应于要编程的所选择的晶体管串的选定存储单元晶体管的选定字线; 第二电压被施加到与所选择的字线相邻并且对应于所选择的晶体管串的相邻晶体管的相邻字线，其中第一电压大于第二电压，将第一和第二电压施加到所选择的和分别使相邻的晶体管与所选择的存储单元晶体管之间形成的电场产生电子的相邻字线，电子向所选择的存储单元晶体管加速并注入到所选存储单元晶体管的电荷存储层中; 其中所述相邻晶体管位于所选择的存储单元晶体管和接地选择晶体管和串选择晶体管中的一个之间，并且所述第一电压被施加到对应于所选择的晶体管串的未选择存储单元晶体管的未选择字线，存储单元晶体管和另一个接地选择晶体管和串选择晶体管。

3. 发明申请

US20100118606A1 Methods of programming non-volatile memory devices and memory devices programmed thereby 有权
标题翻译：对由此编程的非易失性存储器件和存储器件进行编程的方法
公开(公告)号：US20100118606A1
公开(公告)日：2010-05-13
申请号：US12590701
申请日：2009-11-12
申请人： Jae Duk Lee , Soon Moon Jung , Jung Dal Choi
发明人： Jae Duk Lee , Soon Moon Jung , Jung Dal Choi
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C16/3427
摘要： In a method of programming a non-volatile memory device, and in a device incorporating the same, the memory device includes: a plurality of memory cell transistors arranged in a plurality of transistor strings, wherein a transistor string includes a plurality of memory cell transistors arranged in series; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the different transistor strings; and a plurality of bit lines, each bit line connected to one of the transistor strings. The method comprises: applying a first voltage to a selected word line corresponding to a selected memory cell transistor of a selected transistor string to be programmed; and applying a second voltage to a neighboring word line neighboring the selected word line and corresponding to a neighboring transistor of the selected transistor string, wherein the first voltage is greater than the second voltage, the application of the first and second voltages to the selected and neighboring word lines respectively causing electrons to be generated by an electric field formed between the neighboring transistor and the selected memory cell transistor, the electrons accelerating toward the selected memory cell transistor and injecting into a charge storage layer of the selected memory cell transistor.
摘要翻译：在一种编程非易失性存储器件的方法中，以及在其中包含该非易失性存储器件的器件中，存储器件包括：多个存储单元晶体管，被布置在多个晶体管串中，其中晶体管串包括多个存储单元晶体管串联排列多个字线，每个字线连接到每个不同晶体管串的对应存储单元晶体管; 和多个位线，每个位线连接到一个晶体管串。该方法包括：将第一电压施加到与要编程的所选晶体管串的选定存储单元晶体管相对应的选定字线; 以及将第二电压施加到与所选择的字线相邻并且对应于所选择的晶体管串的相邻晶体管的相邻字线，其中所述第一电压大于所述第二电压，将所述第一和第二电压施加到所选择的和分别使相邻的晶体管和选择的存储单元晶体管之间形成的电场产生电子的相邻字线，电子向所选择的存储单元晶体管加速并注入到所选择的存储单元晶体管的电荷存储层中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式