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    • 3. 发明申请
    • SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES
    • 用于Cu互连结构的自对准复合材料M-MOx /电介质盖
    • US20110162874A1
    • 2011-07-07
    • US12683590
    • 2010-01-07
    • Son Van NguyenAlfred GrillThomas J. Haigh, JR.Hosadurga ShobhaTuan A. Vo
    • Son Van NguyenAlfred GrillThomas J. Haigh, JR.Hosadurga ShobhaTuan A. Vo
    • H05K1/09B05D5/12B05D3/06B05D3/04
    • H01L21/76849H01L21/76846H01L21/76864H01L21/76867
    • An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
    • 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括具有约4.0或更小的介电常数的互连电介质材料。 互连电介质材料在其中具有填充有含Cu材料的至少一个开口。 至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。 互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。 互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。
    • 4. 发明授权
    • Self-aligned composite M-MOx/dielectric cap for Cu interconnect structures
    • 用于Cu互连结构的自对准复合M-MOx /电介质盖
    • US08299365B2
    • 2012-10-30
    • US12683590
    • 2010-01-07
    • Son Van NguyenAlfred GrillThomas J. Haigh, Jr.Hosadurga ShobhaTuan A. Vo
    • Son Van NguyenAlfred GrillThomas J. Haigh, Jr.Hosadurga ShobhaTuan A. Vo
    • H05K1/09
    • H01L21/76849H01L21/76846H01L21/76864H01L21/76867
    • An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
    • 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括具有约4.0或更小的介电常数的互连电介质材料。 互连电介质材料在其中具有填充有含Cu材料的至少一个开口。 至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。 互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。 互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。