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1. 发明申请

US20090317663A1 MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：磁记录介质
公开(公告)号：US20090317663A1
公开(公告)日：2009-12-24
申请号：US12485093
申请日：2009-06-16
申请人： Sok-hyun KONG , Hyung-ik LEE , Hoo-san LEE , Young-su CHUNG , Seong-yong YOON
发明人： Sok-hyun KONG , Hyung-ik LEE , Hoo-san LEE , Young-su CHUNG , Seong-yong YOON
IPC分类号： G11B5/725 , G11B5/72
CPC分类号： G11B5/72
摘要： Provided is a magnetic recording medium. The magnetic recording medium includes a substrate, a recording layer disposed on the substrate for magnetic recording, and a carbon protection layer, which includes a carbon layer and a blocking layer disposed in the carbon layer to block infiltration of external impurities, disposed on the recording layer. Since the blocking layer is disposed in the carbon layer, a thickness of the carbon protection layer can be reduced while a sufficient hardness to protect the recording layer can be ensured, and moreover, a softness of the surface of the carbon protection layer can be improved.
摘要翻译：提供了一种磁记录介质。磁记录介质包括基板，设置在用于磁记录的基板上的记录层，以及碳保护层，其包括设置在记录介质上的碳层和设置在碳层中的阻挡层以阻挡外部杂质的渗透层。由于阻挡层设置在碳层中，所以可以降低碳保护层的厚度，同时可以确保足够的硬度来保护记录层，而且能够提高碳保护层的表面的柔软性。

2. 发明申请

US20070178681A1 SEMICONDUCTOR DEVICE HAVING A PLURALITY OF METAL LAYERS DEPOSITED THEREON 审中-公开
标题翻译：具有多孔金属层的半导体器件
公开(公告)号：US20070178681A1
公开(公告)日：2007-08-02
申请号：US11621589
申请日：2007-01-10
申请人： Young-su CHUNG , Sung-kee HAN , Hyung-suk JUNG , Hyung-ik LEE
发明人： Young-su CHUNG , Sung-kee HAN , Hyung-suk JUNG , Hyung-ik LEE
IPC分类号： H01L21/20
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： A semiconductor device has a plurality of stacked metal layers. The semiconductor device includes a substrate, a gate oxide layer deposited on the substrate and formed from a high-k dielectric material, a first metal layer deposited on the gate oxide layer and formed from a nitride of a metal of the high-k dielectric material of the gate oxide layer, a second metal layer deposited on the first metal layer, a third metal layer deposited on the second metal layer, and a material layer deposited on the third metal layer, wherein the material layer taken together with the first, second and third metal layers forms a gate electrode. Because any chemical reaction between the gate oxide layer and the metal layer can be controlled, deterioration of the capacitance equivalent oxide thickness) and leakage of current are prevented, and a semiconductor device having improved insulation can be provided.
摘要翻译：半导体器件具有多个堆叠的金属层。半导体器件包括衬底，沉积在衬底上并由高k电介质材料形成的栅极氧化物层，沉积在栅极氧化物层上并由高k电介质材料的金属的氮化物形成的第一金属层栅极氧化物层，沉积在第一金属层上的第二金属层，沉积在第二金属层上的第三金属层和沉积在第三金属层上的材料层，其中材料层与第一，第二金属层并且第三金属层形成栅电极。由于可以控制栅氧化层和金属层之间的任何化学反应，所以可以防止电容当量氧化物厚度的劣化）和电流泄漏，并且可以提供绝缘性提高的半导体器件。

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