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1. 发明申请

US20130049012A1 DEPOSITION METHODS FOR THE FORMATION OF III/V SEMICONDUCTOR MATERIALS, AND RELATED STRUCTURES 有权
标题翻译：用于形成III / V半导体材料的沉积方法及相关结构
公开(公告)号：US20130049012A1
公开(公告)日：2013-02-28
申请号：US13659521
申请日：2012-10-24
申请人： Soitec , Christophe Figuet , Pierre Tomasini
发明人： Christophe Figuet , Pierre Tomasini
IPC分类号： H01L29/205
CPC分类号： H01L29/205 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0259 , H01L33/04
摘要： Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.
摘要翻译：形成三元III族氮化物材料的方法包括在室中的衬底上的外延生长三元III族氮化物材料。外延生长包括在室内提供前体气体混合物，其包括氮气前体的分压与腔室中一种或多种III族前体的分压的相对高的比例。至少部分地由于相对高的比例，可以将三元III族氮化物材料层生长到具有小的V凹坑缺陷的高最终厚度。使用这种方法制造包括这种三元III族氮化物材料层的半导体结构。

2. 发明授权

US08742428B2 Deposition methods for the formation of III/V semiconductor materials, and related structures 有权
标题翻译：用于形成III / V半导体材料的沉积方法及相关结构
公开(公告)号：US08742428B2
公开(公告)日：2014-06-03
申请号：US13659521
申请日：2012-10-24
申请人： Soitec , Christophe Figuet , Pierre Tomasini
发明人： Christophe Figuet , Pierre Tomasini
IPC分类号： H01L29/15
CPC分类号： H01L29/205 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0259 , H01L33/04
摘要： Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.
摘要翻译：形成三元III族氮化物材料的方法包括在室中的衬底上的外延生长三元III族氮化物材料。外延生长包括在室内提供前体气体混合物，其包括氮气前体的分压与腔室中一种或多种III族前体的分压的相对高的比例。至少部分地由于相对高的比例，可以将三元III族氮化物材料层生长到具有小的V凹坑缺陷的高最终厚度。使用这种方法制造包括这种三元III族氮化物材料层的半导体结构。

3. 发明申请

US20120211870A1 III-V SEMICONDUCTOR STRUCTURES WITH DIMINISHED PIT DEFECTS AND METHODS FOR FORMING THE SAME 有权
标题翻译：具有缺陷凹痕缺陷的III-V半导体结构及其形成方法
公开(公告)号：US20120211870A1
公开(公告)日：2012-08-23
申请号：US13029213
申请日：2011-02-17
申请人： Christophe Figuet , Ed Lindow , Pierre Tomasini
发明人： Christophe Figuet , Ed Lindow , Pierre Tomasini
IPC分类号： H01L29/20 , H01L21/66 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0259 , H01L29/2003
摘要： Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime.
摘要翻译：实施例涉及半导体结构及其形成方法。在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。通过调整诸如生长表面的温度的生长条件以产生超饱和状态，其中In-III-V半导体层将以相对于饱和状态，V型凹坑的密度降低。

4. 发明申请

US20120225539A1 DEPOSITION METHODS FOR THE FORMATION OF III/V SEMICONDUCTOR MATERIALS, AND RELATED STRUCTURES 有权
标题翻译：用于形成III / V半导体材料的沉积方法及相关结构
公开(公告)号：US20120225539A1
公开(公告)日：2012-09-06
申请号：US13371710
申请日：2012-02-13
申请人： Christophe Figuet , Pierre Tomasini
发明人： Christophe Figuet , Pierre Tomasini
IPC分类号： H01L21/20
CPC分类号： H01L29/205 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0259 , H01L33/04
摘要： Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, the layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.
摘要翻译：形成三元III族氮化物材料的方法包括在室中的衬底上的外延生长三元III族氮化物材料。外延生长包括在室内提供前体气体混合物，其包括氮气前体的分压与腔室中一种或多种III族前体的分压的相对高的比例。至少部分地由于相对高的比率，三元III族氮化物材料层可以生长到具有小的V凹坑缺陷的高最终厚度。使用这种方法制造包括这种三元III族氮化物材料层的半导体结构。

5. 发明授权

US08975165B2 III-V semiconductor structures with diminished pit defects and methods for forming the same 有权
标题翻译：缺陷凹坑缺陷的III-V半导体结构及其形成方法
公开(公告)号：US08975165B2
公开(公告)日：2015-03-10
申请号：US13029213
申请日：2011-02-17
申请人： Christophe Figuet , Ed Lindow , Pierre Tomasini
发明人： Christophe Figuet , Ed Lindow , Pierre Tomasini
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0259 , H01L29/2003
摘要： Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime.
摘要翻译：实施例涉及半导体结构及其形成方法。在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。通过调整诸如生长表面的温度的生长条件以产生超饱和状态，其中In-III-V半导体层将以相对于饱和状态，V型凹坑的密度降低。

6. 发明授权

US08329571B2 Deposition methods for the formation of III/V semiconductor materials, and related structures 有权
标题翻译：用于形成III / V半导体材料的沉积方法及相关结构
公开(公告)号：US08329571B2
公开(公告)日：2012-12-11
申请号：US13371710
申请日：2012-02-13
申请人： Christophe Figuet , Pierre Tomasini
发明人： Christophe Figuet , Pierre Tomasini
IPC分类号： H01L21/28
CPC分类号： H01L29/205 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0259 , H01L33/04
摘要： Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.
摘要翻译：形成三元III族氮化物材料的方法包括在室中的衬底上的外延生长三元III族氮化物材料。外延生长包括在室内提供前体气体混合物，其包括氮气前体的分压与腔室中一种或多种III族前体的分压的相对高的比例。至少部分地由于相对高的比例，可以将三元III族氮化物材料层生长到具有小的V凹坑缺陷的高最终厚度。使用这种方法制造包括这种三元III族氮化物材料层的半导体结构。

7. 发明授权

US08148252B1 Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods 有权
标题翻译：形成III / V半导体材料的方法以及使用这种方法形成的半导体结构
公开(公告)号：US08148252B1
公开(公告)日：2012-04-03
申请号：US13038920
申请日：2011-03-02
申请人： Christophe Figuet , Pierre Tomasini
发明人： Christophe Figuet , Pierre Tomasini
IPC分类号： H01L21/28
CPC分类号： H01L29/205 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0259 , H01L33/04
摘要： Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.
摘要翻译：形成三元III族氮化物材料的方法包括在室中的衬底上的外延生长三元III族氮化物材料。外延生长包括在室内提供前体气体混合物，其包括氮气前体的分压与腔室中一种或多种III族前体的分压的相对高的比例。至少部分地由于相对高的比例，可以将三元III族氮化物材料层生长到具有小的V凹坑缺陷的高最终厚度。使用这种方法制造包括这种三元III族氮化物材料层的半导体结构。

8. 发明申请

US20100264463A1 SEMICONDUCTOR HETEROSTRUCTURE AND METHOD FOR FORMING SAME 有权
标题翻译：半导体结构及其形成方法
公开(公告)号：US20100264463A1
公开(公告)日：2010-10-21
申请号：US12827135
申请日：2010-06-30
申请人： Christophe Figuet , Mark Kennard
发明人： Christophe Figuet , Mark Kennard
IPC分类号： H01L29/12
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02494 , H01L21/02502 , H01L21/0251 , H01L21/02524 , H01L21/02532 , H01L21/02587 , H01L21/0262
摘要： The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a1, providing a buffer layer with a second in-plane lattice parameter a2 and providing a top layer over the buffer layer. In order to improve the surface roughness of the semiconductor heterostructure, an additional layer is provided in between the buffer layer and the top layer, wherein the additional layer has a third in-plane lattice parameter a3 which is in between the first and second lattice parameters.
摘要翻译：本发明涉及一种用于通过向第一面内晶格参数a1提供衬底来形成半导体异质结构的方法，为缓冲层提供第二面内晶格参数a2并在缓冲层上提供顶层。为了改善半导体异质结构的表面粗糙度，在缓冲层和顶层之间提供附加层，其中附加层具有在第一和第二晶格参数之间的第三面内晶格参数a3 。

9. 发明授权

US07459374B2 Method of manufacturing a semiconductor heterostructure 有权
标题翻译：半导体异质结构的制造方法
公开(公告)号：US07459374B2
公开(公告)日：2008-12-02
申请号：US11674392
申请日：2007-02-13
申请人： Cécile Aulnette , Christophe Figuet , Nicolas Daval
发明人： Cécile Aulnette , Christophe Figuet , Nicolas Daval
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for manufacturing a semiconductor heterostructure by first manufacturing a donor wafer having a first substrate with a first in-plane lattice parameter, a spatially graded buffer layer having a second in-plane lattice parameter, and a strained smoothing layer of a semiconductor material having a third in-plane lattice parameter which has a value between that of the first and second lattice parameters. A top layer is formed on the ungraded layer a top layer of a semiconductor material having a top surface, optionally with a superficial layer present on the top surface and having a thickness that is equal to or smaller than 10 nanometers. Next, a handle wafer of a second substrate having an insulator layer thereon is bonded with the donor wafer in such way that (a) the insulator layer of the handle wafer is bonded directly onto the top surface of the top layer of the donor wafer, or (b) the insulator layer of the handle wafer is bonded onto the superficial layer.
摘要翻译：一种半导体异质结构的制造方法，首先制造具有第一面内晶格参数的第一衬底的施主晶片，具有第二面内晶格参数的空间渐变缓冲层，以及半导体材料的应变平滑化层，具有第一和第二格子参数之间的值的第三平面晶格参数。顶层在未分级层上形成具有顶表面的半导体材料的顶层，任选具有位于顶表面上的表层，并具有等于或小于10纳米的厚度。接下来，其上具有绝缘体层的第二衬底的处理晶片与施主晶片接合，使得（a）把手晶片的绝缘体层直接接合到施主晶片顶层的顶表面上，或者（b）把手晶片的绝缘体层结合到表面层上。

10. 发明申请

US20060211230A1 Laminated layer structure and method for forming the same 有权
标题翻译：层压结构及其形成方法
公开(公告)号：US20060211230A1
公开(公告)日：2006-09-21
申请号：US11146572
申请日：2005-06-06
申请人： Christophe Figuet
发明人： Christophe Figuet
IPC分类号： H01L21/3205 , H01L21/4763 , H01L31/00 , H01L29/06
CPC分类号： H01L21/02507 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262
摘要： The invention relates to a laminated layer structure that includes a substrate and a stack of a plurality of layers of a material that includes at least two compounds A and B, wherein compound A has a crystalline structure being sufficient to allow a homo- or heteroepitaxial growth of compound A on the substrate, and wherein at least a part of the layers of the stack have a gradient composition AxB(1-xg), with x being a composition parameter within the range of 0 and 1 and with the composition parameter (1-xg) increasing gradually, in particular linearly, over the thickness of the corresponding layer. In order to improve the quality of the laminated layer structure with respect to the surface roughness and dislocation density, the composition parameter at the interface between the layer in the stack with the gradient composition and the subsequent layer in the stack is chosen to be smaller than the composition parameter (1-xg) of the layer with a gradient composition. The invention also relates to a method to fabricate such a laminated layer structure.
摘要翻译：本发明涉及层压层结构，其包括基材和包含至少两种化合物A和B的多层材料的叠层，其中化合物A具有足以允许同质或异质外延生长的晶体结构的化合物A，并且其中堆叠的至少一部分层具有梯度组合物A x B（1-x g），其中x是组成参数在0和1的范围内，并且组成参数（1-x＆lt;＆gt;＆gt;）在相应层的厚度上逐渐增加，特别是线性增加。为了提高相对于表面粗糙度和位错密度的叠层结构的质量，将层叠层与梯度组成之间的界面处的组成参数和堆叠中的后续层选择为小于具有梯度组成的层的组成参数（1-x g g）。本发明还涉及制造这种叠层结构的方法。

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