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1. 发明授权

US5840204A Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby 失效
标题翻译：在氧化物超导薄膜上形成图案的方法和由此制造的超导装置
公开(公告)号：US5840204A
公开(公告)日：1998-11-24
申请号：US417395
申请日：1995-04-05
申请人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
发明人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , H01L21/00
CPC分类号： H01L39/2467 , H01L39/146 , Y10S505/728
摘要： A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO.sub.2 layer on the oxide superconductor thin film, patterning the SiO.sub.2 layer so as to form the same pattern as that of the oxide superconductor thin film which will be patterned, etching the oxide superconductor thin film by using the patterned SiO.sub.2 layer as a mask, and removing the SiO.sub.2 layer by using a weak HF solution, a buffer solution including HF or a mixture including HF.
摘要翻译：一种用于图案化氧化物超导体薄膜的方法，包括在氧化物超导体薄膜上形成SiO 2层的步骤，图案化SiO 2层以形成与将被图案化的氧化物超导体薄膜相同的图案，蚀刻通过使用图案化的SiO 2层作为掩模，并且通过使用弱HF溶液，包括HF的缓冲溶液或包含HF的混合物除去SiO 2层的氧化物超导体薄膜。

2. 发明授权

US5607900A Process for cleaning a surface of thin film of oxide superconductor 失效
标题翻译：清洁氧化物超导体薄膜表面的工艺
公开(公告)号：US5607900A
公开(公告)日：1997-03-04
申请号：US551702
申请日：1995-11-01
申请人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama , So Tanaka
发明人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama , So Tanaka
IPC分类号： H01L39/24 , B05D5/12 , B08B5/04
CPC分类号： H01L39/247 , Y10S505/742
摘要： A process for removing contaminants from a surface of a thin film of oxide superconductor deposited on a substrate. The thin film of oxide superconductor is heat-treated in ultra-high vacuum at a temperature which is within a range of -100.degree. C. to +100.degree. C. of the temperature at which oxygen enter into the oxide superconductor.The process is used for removing photo-resist from a surface of thin film of oxide superconductor and for producing a layered structure containing at least one thin film of oxide superconductor such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x having a contaminated surface. On the cleaned surface, another thin film of oxide superconductor or non-superconductor is deposited. The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.
摘要翻译：用于从沉积在基底上的氧化物超导体薄膜的表面去除污染物的方法。氧化物超导体的薄膜在超高真空中在氧进入氧化物超导体的温度在-100℃至+ 100℃的温度范围内进行热处理。该方法用于从氧化物超导体的薄膜的表面去除光致抗蚀剂，并且用于生产含有至少一种具有污染表面的Y1Ba2Cu3O7-x氧化物超导体薄膜的层状结构。在清洁的表面上，沉积另一薄膜的氧化物超导体或非超导体。所得到的层状薄膜结构用于制造超导晶体管，约瑟夫森结，超导电路等。

3. 发明授权

US5439875A Process for preparing Josephson junction device having weak link of artificial grain boundary 失效
标题翻译：制备具有人造晶界弱连接的约瑟夫逊连接装置的方法
公开(公告)号：US5439875A
公开(公告)日：1995-08-08
申请号：US337413
申请日：1994-11-07
申请人： So Tanaka , Hiroshi Inada , Michitomo Iiyama
发明人： So Tanaka , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/24 , B44C1/22 , C23F1/00
CPC分类号： H01L39/2496 , Y10S505/729 , Y10S505/82 , Y10S505/922
摘要： A Josephson junction device comprises a single crystalline substrate including a principal surface having a first and a second regions of which at least lattice distance of exposed lattices are slightly different from each other and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second portions respectively positioned on the first and the second regions of the substrate, which are constituted of single crystals of the oxide superconductor, lattices of the one shifts at angle of 45.degree. to that of the other, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.
摘要翻译：约瑟夫森结器件包括单晶衬底，其包括具有第一和第二区域的主表面，该第一区域和第二区域的至少晶格距离彼此稍微不同，以及形成在衬底的主表面上的氧化物超导体薄膜。氧化物超导体薄膜包括分别位于基板的第一和第二区域上的第一和第二部分，该第一和第二部分由氧化物超导体的单晶构成，一个晶格以45°的角度移动另外，在所述两个部分之间的晶界，构成约瑟夫逊结的薄弱环节。

4. 发明授权

US5413982A Field effect transistor having c-axis channel layer 失效
标题翻译：具有c轴沟道层的场效应晶体管
公开(公告)号：US5413982A
公开(公告)日：1995-05-09
申请号：US990836
申请日：1992-12-14
申请人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
发明人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , H01B12/00 , B05D5/12
CPC分类号： H01L39/2467 , H01L39/146 , Y10S505/728
摘要： A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film on the non-superconducting oxide layer, a superconducting source region and a superconducting drain region formed of an a-axis oriented oxide superconductor thin film at the both sides of the superconducting channel separated from each other, which are electrically connected each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, and a gate electrode of a material which includes silicon through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the gate electrode is embedded between the superconducting source region and the superconducting drain region and is isolated from the superconducting source region and the superconducting drain region by an insulating region formed by diffused silicon from the gate electrode.
摘要翻译：一种超导装置，包括具有主表面的衬底，具有与氧化物超导体相似的晶体结构的非超导氧化物层，在非超导体上由c轴取向的氧化物超导体薄膜形成的极薄超导通道氧化物层，超导源极区域和由超导通道两侧的a轴取向的氧化物超导体薄膜形成的超导漏极区域，由超导通道彼此电连接，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道，以及通过超导通道上的栅极绝缘体包括硅的材料的栅电极，用于控制流过超导通道的超导电流，其中栅电极被嵌入 d，并且通过由栅极电极扩散的硅形成的绝缘区域与超导源极区域和超导漏极区域隔离。

5. 发明授权

US5672569A Process for fabricating a superconducting circuit 失效
标题翻译：制造超导电路的工艺
公开(公告)号：US5672569A
公开(公告)日：1997-09-30
申请号：US400813
申请日：1995-03-08
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L21/768 , H01L23/498 , H01L23/532 , H01L39/24
CPC分类号： H01L39/2464 , H01L21/76891 , H01L23/49888 , H01L23/53285 , H01L2924/0002 , Y10S505/703
摘要： A superconducting circuit having patterned superconducting wiring lines. Each wiring line consists of at least one portion (2') of the thin film (2) of an oxide superconductor deposited on a substrate (1). The portion (2') has a predetermined crystal orientation and the remaining portions (2") have a different crystal orientation or changed to non-superconductor. The superconducting circuit has a planar surface. In variations, two different wiring lines (21, 22) each having a different crystal orientation are produced at different portions of a thin film of oxide superconductor, so that superconducting current flow separately through two different portions in a common thin film.
摘要翻译：具有图案化超导布线的超导电路。每个布线由沉积在基板（1）上的氧化物超导体的薄膜（2）的至少一部分（2'）组成。部分（2'）具有预定的晶体取向，其余的部分（2“）具有不同的晶体取向或改变为非超导体。超导电路具有平坦表面。在变型中，在氧化物超导体的薄膜的不同部分处产生各自具有不同晶体取向的两条不同的布线（21,22），使得超导电流分开通过共同薄膜中的两个不同部分流动。

6. 发明授权

US5416072A Superconducting device having an thin superconducting channel formed of oxide superconducting material 失效
标题翻译：具有由氧化物超导材料形成的薄的超导通道的超导装置
公开(公告)号：US5416072A
公开(公告)日：1995-05-16
申请号：US097613
申请日：1993-07-26
申请人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama
发明人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , H01B12/00 , B05D5/12
CPC分类号： H01L39/146 , Y10S505/702 , Y10S505/729
摘要： A superconducting device has a superconducting channel formed of an oxide superconductor on the principal surface of a substrate. A source electrode and a drain electrode likewise formed of oxide superconductor, are electrically connected by the channel to provide for superconducting current flow. A superconducting gate electrode is isolated by a side insulating region which completely covers each of opposite side surfaces of the gate electrode. The relative thicknesses of both the source and drain electrodes are much greater than that of the channel thickness. The superconducting channel and the gate insulator are both formed by one oxide thin film, and in a preferred embodiment, the gate electrode likewise is provided by the same film which forms the gate insulator and channel. The gate insulator is therefore is formed of the same constituent elements as those of the superconducting channel, but the film portion which forms the gate insulator has oxygen in an amount less than that of the portion defining the channel. The superconducting gate electrode is surrounded by the superconducting channel, the superconducting source electrode and the superconducting drain electrode but is electrically isolated from the superconducting channel, the superconducting source electrode and the superconducting drain electrode by the gate insulator and the side insulating region.
摘要翻译：超导器件具有由衬底的主表面上的氧化物超导体形成的超导通道。同样由氧化物超导体形成的源电极和漏电极通过沟道电连接以提供超导电流。超导栅极通过完全覆盖栅电极的相对侧面的侧绝缘区隔离。源极和漏极两者的相对厚度远大于沟道厚度的相对厚度。超导通道和栅极绝缘体都由一个氧化物薄膜形成，并且在优选实施例中，栅电极同样由形成栅极绝缘体和沟道的相同的膜提供。因此，栅极绝缘体由与超导通道相同的构成元件形成，但形成栅极绝缘体的膜部分的氧含量小于限定沟道的部分的氧。超导栅电极由超导通道，超导源电极和超导漏电极围绕，但是通过栅极绝缘体和侧绝缘区域与超导沟道，超导源极和超导漏极电隔离。

7. 发明授权

US5714767A Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby 失效
标题翻译：制造具有减小的氧化物超导层厚度的超导装置的方法和由此制造的超导装置
公开(公告)号：US5714767A
公开(公告)日：1998-02-03
申请号：US551366
申请日：1995-11-01
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/146
摘要： For manufacturing a superconducting device, a compound layer which is composed of the same constituent elements of an oxide superconductor is formed on a surface of the substrate, and a gate electrode is formed on a portion of the compound layer. Portions of the compound layer at both sides of die gate electrode are etched using die gate electrode as a mask, so that a shallow step is formed on an upper surface of the compound layer and side surfaces of the step exposed. After that electric power is applied to the gate electrode to heat the gate electrode so as to carry out a heat-treatment on the portion of die compound layer under the gate electrode locally, so that a gate insulator formed directly under the the gate electrode and a superconducting channel which is constituted an extremely thin superconducting region composed of the oxide superconductor and formed under die gate insulator are produced in a self alignment to die gate electrode.
摘要翻译：为了制造超导装置，在衬底的表面上形成由氧化物超导体的相同组成元素组成的化合物层，并且在化合物层的一部分上形成栅电极。使用模具栅电极作为掩模来蚀刻在栅极电极的两侧的化合物层的部分，从而在化合物层的上表面和暴露的台阶的侧表面上形成浅的台阶。在栅电极施加电力加热栅电极之后，局部地对栅电极下的管芯复合层部分进行热处理，从而形成在栅电极正下方的栅极绝缘体和制造由氧化物超导体构成的非常薄的超导区域并形成在栅极绝缘体下方的超导通道以对准栅极电极的自对准的方式制造。

8. 发明授权

US5683968A Method for manufacturing a superconducting device 失效
标题翻译：制造超导装置的方法
公开(公告)号：US5683968A
公开(公告)日：1997-11-04
申请号：US521736
申请日：1995-08-31
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/146 , Y10S505/702
摘要： A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.
摘要翻译：超导器件或超FET具有一对超导电极区域（20b，20c），其由沉积在衬底（5）和弱/墨区域（20a）上的薄膜（20）氧化物超导体组成，超导电极区域（20b，20c）位于弱连接区域（20a）的相对侧，这些超导电极区域（20b，20c）和弱连接区域（20a）形成在基板（5）的公共平面上）。通过将衬底（5）的构成元件和/或栅电极绝缘层（16）以这种方式局部扩散到氧化物超导体的薄膜（20）中而产生弱连接区域（20a）氧化物超导体的薄膜（20）的实质壁厚在弱连接区域（20a）处减小，以便在氧化物超导体的薄膜（20）中留下弱连接或超导通道（10），超过通过扩散产生的非超导区域（50）。

9. 发明授权

US5621223A Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same 失效
标题翻译：具有减小氧化物超导层厚度的超导装置及其制造方法
公开(公告)号：US5621223A
公开(公告)日：1997-04-15
申请号：US515701
申请日：1995-08-16
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/146 , Y10S505/702 , Y10S505/728
摘要： A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting region of an extremely thin thickness which is formed directly on the principal surface of the substrate so as to bridge the first and second oxide superconducting regions. A barrier layer and a diffusion source layer are formed on the third oxide superconducting region, and an isolation region is formed to cover an upper portion or both side surfaces of the diffusion source layer. The first, second and third oxide superconducting regions and the isolation region are formed of the same oxide superconductor material, and the isolation region is diffused with a material of the diffusion source layer, so that the isolation region does not show superconductivity. Therefore, a superconducting current can flow between the first and second oxide superconducting regions through only the third oxide superconducting region. For formation of the superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on the principal surface of the substrate, and a barrier layer and a diffusion source layer are formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the two layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film on an upper portion or both side surfaces of the diffusion source layer.
摘要翻译：超导装置包括直接形成在彼此分离的基板的主表面上的相对较厚厚度的第一和第二氧化物超导区域，以及直接形成在主体上的极薄厚度的第三氧化物超导区域表面以便桥接第一和第二氧化物超导区域。在第三氧化物超导区域上形成阻挡层和扩散源层，形成隔离区以覆盖扩散源层的上部或两侧表面。第一，第二和第三氧化物超导区域和隔离区域由相同的氧化物超导体材料形成，并且隔离区域与扩散源层的材料扩散，使得隔离区域不显示超导性。因此，超导电流可以仅通过第三氧化物超导区域在第一和第二氧化物超导区域之间流动。为了形成超导装置，在基板的主表面上形成具有非常薄的厚度的第一氧化物超导体薄膜，并且在第一氧化物超导体薄膜的一部分上形成阻挡层和扩散源层。在第一氧化物超导体薄膜的暴露表面上生长第二氧化物超导体薄膜，直到两层嵌入到第二氧化物超导体薄膜中，使得扩散源层的材料扩散到第二氧化物超导体薄膜膜在扩散源层的上部或两侧表面上。

10. 发明授权

US5447907A Superconducting device with c-axis channel and a-axis source and drain having a continuous crystal structure 失效
标题翻译：具有c轴通道和a轴源极和漏极的超导器件具有连续的晶体结构
公开(公告)号：US5447907A
公开(公告)日：1995-09-05
申请号：US989787
申请日：1992-12-10
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01B12/00 , H01L39/22
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/703 , Y10T29/41
摘要： A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, a superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor. The non-superconducting oxide layers contact with at least the superconducting source region and the superconducting drain region. In the superconducting device, the superconducting channel, the superconducting source region and the superconducting drain region are formed of one oxide superconductor thin film of which the center portion is c-axis oriented and the both ends are a-axis oriented.
摘要翻译：一种超导装置，包括具有主表面的衬底，超导源极区和由衬底的主表面上的氧化物超导体形成的超导漏极区，所述超导源区彼此分离的由氧化物超导体形成的超导通道在超导源极区域和超导漏区。超导通道将超导源极区域电连接到超导漏极区域，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道。超导装置包括通过超导通道上的栅极绝缘体的栅极电极，用于控制流过超导通道的超导电流，以及具有与氧化物超导体相似的晶体结构的非超导氧化物层。非超导氧化物层与至少超导源极区域和超导漏极区域接触。在超导装置中，超导通道，超导源极区域和超导漏极区域由一个氧化物超导体薄膜形成，其中心部分为c轴取向并且两端为a轴取向。

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