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1. 发明申请

US20110015395A1 PYRAZOLE COMPOUNDS WITH INHIBITORY ACTIVITY AGAINST ROS KINASE 有权
标题翻译：具有抑制ROS激酶活性的吡咯化合物
公开(公告)号：US20110015395A1
公开(公告)日：2011-01-20
申请号：US12605074
申请日：2009-10-23
申请人： So Ha LEE , Kyung Ho Yoo , Chang Hyun Oh , Dong Keun Han , Ibrahim Mustafa El-Deeb , Byung Sun Park , Su Jin Jung
发明人： So Ha LEE , Kyung Ho Yoo , Chang Hyun Oh , Dong Keun Han , Ibrahim Mustafa El-Deeb , Byung Sun Park , Su Jin Jung
IPC分类号： A61K31/506 , C07D403/04 , C07D401/14 , C07D401/04 , A61K31/4439 , A61P35/00
CPC分类号： C07D401/04 , C07D401/14 , C07D403/04 , C07D403/14
摘要： Disclosed herein are novel pyrazole compounds, pharmaceutically acceptable salts thereof, a method for preparing the same, and uses thereof as anticancer agents.
摘要翻译：本文公开了新颖的吡唑化合物，其药学上可接受的盐，其制备方法及其作为抗癌剂的用途。

2. 发明授权

US08273880B2 Pyrazole compounds with inhibitory activity against ROS kinase 有权
标题翻译：吡唑类化合物对ROS激酶具有抑制活性
公开(公告)号：US08273880B2
公开(公告)日：2012-09-25
申请号：US12605074
申请日：2009-10-23
申请人： So Ha Lee , Kyung Ho Yoo , Chang Hyun Oh , Dong Keun Han , Ibrahim Mustafa El-Deeb , Byung Sun Park , Su Jin Jung
发明人： So Ha Lee , Kyung Ho Yoo , Chang Hyun Oh , Dong Keun Han , Ibrahim Mustafa El-Deeb , Byung Sun Park , Su Jin Jung
IPC分类号： C07D403/00
CPC分类号： C07D401/04 , C07D401/14 , C07D403/04 , C07D403/14
摘要： Disclosed herein are novel pyrazole compounds, pharmaceutically acceptable salts thereof, a method for preparing the same, and uses thereof as anticancer agents.
摘要翻译：本文公开了新颖的吡唑化合物，其药学上可接受的盐，其制备方法及其作为抗癌剂的用途。

3. 发明授权

US07187328B2 Antenna device 失效
标题翻译：天线设备
公开(公告)号：US07187328B2
公开(公告)日：2007-03-06
申请号：US10532298
申请日：2002-10-25
申请人： Masato Tanaka , Jae-Hyeuk Jang , Young-Sik Kim , Byung Sun Park
发明人： Masato Tanaka , Jae-Hyeuk Jang , Young-Sik Kim , Byung Sun Park
IPC分类号： H01Q1/38
CPC分类号： H01Q9/0407 , H01Q9/0414 , H01Q13/02 , H01Q13/065 , H01Q19/22
摘要： In an antenna device having a substantially conical conductive member, having upper and lower sides made open, erected in a substantially vertical direction around a substantially circular microstrip patch provided on the upper side of a substantially circular substrate, the lower opening portion of the conductive member is grounded to a ground plate provided on the lower side of the substrate, and the diameter of the upper opening portion of the conductive member is larger than the diameter of the lower opening portion of the conductive member.
摘要翻译：在具有大致圆锥形的导电构件的天线装置中，具有使上和下侧开放的天线装置，其围绕设置在基本圆形基板的上侧上的大致圆形的微带贴片沿基本垂直的方向竖立，导电构件的下开口部分被接地到设置在基板的下侧的接地板，并且导电构件的上开口部的直径大于导电构件的下开口部的直径。

4. 发明授权

US06361927B1 Method for fabricating grating pattern 有权
标题翻译：光栅图案制作方法
公开(公告)号：US06361927B1
公开(公告)日：2002-03-26
申请号：US09461175
申请日：1999-12-14
申请人： Byung Sun Park
发明人： Byung Sun Park
IPC分类号： H01L21473
CPC分类号： G02B5/1857
摘要： There is a provided a method for fabricating a grating pattern, including the steps of: coating an SOG solution on a glass substrate by spin coating method; heat-treating the SOG thin film coated on the glass substrate, to form a silicon oxide layer; coating a photoresist on the silicon oxide layer and exposing the photoresist layer by masking process; developing the exposed photoresist layer and wet-etching the silicon oxide layer; and developing the photoresist layer used as a mask. According to the present invention, the grating pattern can be fabricated without etching the glass substrate, and high-quality products at a low cost is accomplished since the present invention does not require the expensive sputtering apparatus. Furthermore, the step-shape oxide layer pattern can be obtained through one-time wet etching since the multilevel oxide layer is easily formed.
摘要翻译：提供了一种制造光栅图案的方法，包括以下步骤：通过旋涂法在玻璃基板上涂覆SOG溶液; 对涂覆在玻璃基板上的SOG薄膜进行热处理，以形成氧化硅层; 在氧化硅层上涂覆光致抗蚀剂并通过掩蔽工艺曝光光致抗蚀剂层; 显影曝光的光致抗蚀剂层并湿法蚀刻氧化硅层; 并且将用作掩模的光致抗蚀剂层显影。根据本发明，可以在不蚀刻玻璃基板的情况下制造光栅图案，并且实现了低成本的高质量产品，因为本发明不需要昂贵的溅射装置。此外，由于多层氧化物层容易形成，所以可以通过一次湿法蚀刻获得阶梯形氧化物层图案。

5. 发明授权

US06204102B1 Method of fabricating compound semiconductor devices using lift-off of insulating film 有权
标题翻译：使用绝缘膜剥离制造复合半导体器件的方法
公开(公告)号：US06204102B1
公开(公告)日：2001-03-20
申请号：US09207512
申请日：1998-12-09
申请人： Hyung Sup Yoon , Jin Hee Lee , Byung Sun Park , Chul Soon Park , Kwang Eui Pyun
发明人： Hyung Sup Yoon , Jin Hee Lee , Byung Sun Park , Chul Soon Park , Kwang Eui Pyun
IPC分类号： H01L21338
CPC分类号： B82Y10/00 , H01L21/28587 , H01L29/66469 , H01L29/66878
摘要： A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.
摘要翻译：一种形成化合物半导体器件的栅电极的方法包括：形成具有第一孔的第一绝缘膜图案，在第一绝缘膜图案上形成具有由反V型构成的第二孔的第二绝缘膜图案，形成T 通过在整个结构上沉积导电膜，去除第二绝缘膜图案，通过蚀刻第一绝缘膜图案在极侧壁上形成绝缘隔离物，并通过自发形成源极和漏极的欧姆电极，使用T型栅电极作为掩模的对准方法。因此，通过使用绝缘膜，可以防止诸如难熔金属的材料的T型栅极电极由于高退火而被稳定地形成。通过自对准方法形成的欧姆金属和栅电极可以通过在这些电极之间形成绝缘膜间隔来防止互连。

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