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1. 发明申请

US20120040175A1 COATED SUBSTRATE 审中-公开
标题翻译：涂层基材
公开(公告)号：US20120040175A1
公开(公告)日：2012-02-16
申请号：US13138690
申请日：2010-03-19
申请人： Simon James Hurst , Troy Manning , Peter Dobson , Steve Sheard , Peter Bishop , Ivan Parkin
发明人： Simon James Hurst , Troy Manning , Peter Dobson , Steve Sheard , Peter Bishop , Ivan Parkin
IPC分类号： B32B5/16 , C23C4/10 , C03C17/23 , B05D5/06 , B05D5/12
CPC分类号： C03C1/008 , C03C17/008 , C03C2217/72 , C23C18/1216 , C23C18/1229 , C23C18/1258 , C23C18/127 , Y10T428/25
摘要： Methods for coating a substrate are disclosed, the methods comprising providing a substrate, providing pre-formed nanoparticles of an inorganic material, providing at least one precursor of a first metal oxide, and depositing a coating on at least one surface of the substrate by contacting the surface with the precursor of the metal oxide and pre-formed nanoparticles. Also disclosed are substrates coated using such a method. The coated substrates are coloured. Preferably the metal oxide is a doped metal oxide to modify the thermal properties of the coating. The preferred nanoparticles are of platinum group metals or coinage metals.
摘要翻译：公开了涂覆基材的方法，所述方法包括提供基材，提供无机材料的预先形成的纳米颗粒，提供至少一种第一金属氧化物的前体，以及通过接触将沉积在基材的至少一个表面上的涂层表面与金属氧化物的前体和预形成的纳米颗粒。还公开了使用这种方法涂覆的基材。涂覆的基材是着色的。优选地，金属氧化物是掺杂的金属氧化物以改变涂层的热性能。优选的纳米颗粒是铂族金属或造币金属。

2. 发明申请

US20070048438A1 THERMOCHROMIC COATINGS 审中-公开
标题翻译：热敏涂料
公开(公告)号：US20070048438A1
公开(公告)日：2007-03-01
申请号：US11424821
申请日：2006-06-16
申请人： Ivan Parkin , Troy Manning
发明人： Ivan Parkin , Troy Manning
IPC分类号： C23C28/00 , B05D5/12
CPC分类号： C03C17/245 , C01G31/00 , C01P2002/50 , C03C2217/218 , C03C2218/152 , C23C16/405
摘要： The present invention provides the use of atmospheric pressure chemical vapour deposition (APCVD) for producing a film of thermochmmic transition metal-doped vanadium (iN) oxide on a substrate. Specifically, the invention prevides a method of producing a film of thermochromic transition metal-doped vanadium (IV) oxide on a substrate by atmospheric pressure chemical vapour deposition comprising the steps of: (i) reacting together (a) a vanadium precursor, (b) a transition metal dopant precursor, and (c) an oxygen precursor in an atmospheric pressure chemical vapour deposition reactor to form thermochromic transition metal-doped vanadium (IV) oxide, and (ii) depositing the thermochromic transition metal-doped vanadium (IV) oxide onto the substrate. A preferred transition metal dopant is tungsten. The invention also provides transition metal-doped vanadium (TV) oxide, films thereof and substrates (e.g., glass substrates) coated with a film of transition metal-doped vanadium (IV) oxide. Intelligent window systems, infrared modulators and data storage devices comprising such substrates are also provided.
摘要翻译：本发明提供大气压化学气相沉积（APCVD）用于在衬底上生产热过渡金属掺杂钒（iN）的薄膜的用途。具体地说，本发明预先通过大气压化学气相沉积法在基底上制造热致变色金属过渡金属掺杂氧化钒（IV）的膜的方法，包括以下步骤：（i）使（a）钒前体，（b ）过渡金属掺杂剂前体，和（c）在大气压化学气相沉积反应器中的氧前体，以形成热变色金属掺杂的氧化钒（IV），和（ii）沉积热变色过渡金属掺杂的钒（IV）氧化物到基板上。优选的过渡金属掺杂剂是钨。本发明还提供了过渡金属掺杂的钒（TV）氧化物，其膜和涂覆有过渡金属掺杂的氧化钒（IV）的膜的衬底（例如，玻璃衬底）。还提供了包括这种基板的智能窗系统，红外调制器和数据存储装置。

3. 发明授权

US08725927B2 Hot memory block table in a solid state storage device 有权
标题翻译：热存储块表在固态存储设备中
公开(公告)号：US08725927B2
公开(公告)日：2014-05-13
申请号：US12251640
申请日：2008-10-15
申请人： Troy Manning
发明人： Troy Manning
IPC分类号： G06F12/10 , G06F12/08
CPC分类号： G06F12/1009 , G06F12/0246 , G06F12/0292 , G06F12/0868 , G06F12/1027 , G06F12/122 , G06F12/123 , G06F2212/1016 , G06F2212/1036 , G06F2212/7201
摘要： Solid state storage devices and methods for populating a hot memory block look-up table (HBLT) are disclosed. In one such method, an indication to an accessed page table or memory map of a non-volatile memory block is stored in the HBLT. If the page table or memory map is already present in the HBLT, the priority location of the page table or memory map is increased to the next priority location. If the page table or memory map is not already stored in the HBLT, the page table or memory map is stored in the HBLT at some priority location, such as the mid-point, and the priority location is incremented with each subsequent access to that page table or memory map.
摘要翻译：公开了用于填充热存储器块查找表（HBLT）的固态存储设备和方法。在一种这样的方法中，向HBLT中存储对非易失性存储器块的访问页表或存储器映射的指示。如果页面表或存储器映射已经存在于HBLT中，则页表或存储器映射的优先位置将增加到下一个优先位置。如果页面表或存储器映射尚未存储在HBLT中，则页表或存储器映射将存储在HBLT中的某个优先位置，例如中点，并且优先级位置随着每个后续访问增加页表或内存图。

4. 发明申请

US20140044977A1 METHOD FOR COATING SUBSTRATES 审中-公开
标题翻译：涂层基材的方法
公开(公告)号：US20140044977A1
公开(公告)日：2014-02-13
申请号：US13261759
申请日：2012-04-17
申请人： Troy Manning , Ivan Paul Parkin , Mathew Robert Waugh
发明人： Troy Manning , Ivan Paul Parkin , Mathew Robert Waugh
IPC分类号： C03C17/34
CPC分类号： C03C17/3417 , C03C2217/94 , C03C2218/112 , C03C2218/152 , C23C16/0272 , C23C16/407 , C23C16/4486
摘要： A method for coating a substrate with a coating having a controlled morphology is disclosed, the method comprising providing a substrate, depositing a nucleating layer on a surface of the substrate using an aerosol assisted deposition method and depositing at least one further layer by chemical vapour deposition. The nucleating layer and further layer preferably comprise tin oxide. The substrate is preferably glass. The method results in high transmittance and a low diffuse transmission across the visible and infrared region.
摘要翻译：公开了一种用具有受控形态的涂层涂覆基材的方法，所述方法包括提供基材，使用气溶胶辅助沉积方法在基材表面上沉积成核层，并通过化学气相沉积沉积至少一层。成核层和另外的层优选包含氧化锡。基材优选为玻璃。该方法导致透射率高，透过可见光和红外区域的低透射率。

5. 发明申请

US20100268985A1 DATA RECOVERY IN A SOLID STATE STORAGE SYSTEM 有权
标题翻译：数据恢复在固态存储系统中
公开(公告)号：US20100268985A1
公开(公告)日：2010-10-21
申请号：US12424766
申请日：2009-04-16
申请人： Troy Larsen , Martin Culley , Troy Manning
发明人： Troy Larsen , Martin Culley , Troy Manning
IPC分类号： G06F11/16 , G06F12/00
CPC分类号： G06F11/073 , G06F11/108 , G11C29/10
摘要： Methods for data recovery and memory systems are provided. According to at least one such method, when defective data is read from a memory location, the data is recovered by an XOR operation on the remaining good data and associated RAID data to reconstruct the defective data. The defective data is excluded from the XOR operation.
摘要翻译：提供数据恢复和存储系统的方法。根据至少一种这样的方法，当从存储器位置读取有缺陷的数据时，通过对剩余的良好数据和相关联的RAID数据进行异或运算来恢复数据以重建缺陷数据。缺陷数据从异或运算中排除。

6. 发明申请

US20100095049A1 HOT MEMORY BLOCK TABLE IN A SOLID STATE STORAGE DEVICE 有权
标题翻译：固态储存装置中的高存储器块表
公开(公告)号：US20100095049A1
公开(公告)日：2010-04-15
申请号：US12251640
申请日：2008-10-15
申请人： Troy Manning
发明人： Troy Manning
IPC分类号： G06F12/02 , G06F12/00 , G06F12/10
CPC分类号： G06F12/1009 , G06F12/0246 , G06F12/0292 , G06F12/0868 , G06F12/1027 , G06F12/122 , G06F12/123 , G06F2212/1016 , G06F2212/1036 , G06F2212/7201
摘要： Solid state storage devices and methods for populating a hot memory block look-up table (HBLT) are disclosed. In one such method, an indication to an accessed page table or memory map of a non-volatile memory block is stored in the HBLT. If the page table or memory map is already present in the HBLT, the priority location of the page table or memory map is increased to the next priority location. If the page table or memory map is not already stored in the HBLT, the page table or memory map is stored in the HBLT at some priority location, such as the mid-point, and the priority location is incremented with each subsequent access to that page table or memory map.
摘要翻译：公开了用于填充热存储器块查找表（HBLT）的固态存储设备和方法。在一种这样的方法中，向HBLT中存储对非易失性存储器块的访问页表或存储器映射的指示。如果页面表或存储器映射已经存在于HBLT中，则页表或存储器映射的优先位置将增加到下一个优先位置。如果页面表或存储器映射尚未存储在HBLT中，则页表或存储器映射将存储在HBLT中的某个优先位置，例如中点，并且优先级位置随着每个后续访问增加页表或内存图。

7. 发明授权

US07404124B2 On-chip sampling circuit and method 失效
标题翻译：片上采样电路及方法
公开(公告)号：US07404124B2
公开(公告)日：2008-07-22
申请号：US11712040
申请日：2007-02-28
申请人： Chris Martin , James Brian Johnson , Troy Manning , Brent Keeth
发明人： Chris Martin , James Brian Johnson , Troy Manning , Brent Keeth
IPC分类号： G01R31/28
CPC分类号： G11C29/48 , G11C29/1201
摘要： Through addressing circuitry, a sampling circuit can choose a unique internal node/signal on an encapsulated/packaged chip to be output to one or more drivers. The chosen signals available at the target node are directed either through a select circuit to an output pin, or directly to an output pin. In a preferred mode, decode circuits used to select a unique node are serially connected, allowing for a large number of signals to be made available for analyzing without a large impact on circuit layout. Because of the rules related to abstracts, this abstract should not be used in the construction of the claims.
摘要翻译：通过寻址电路，采样电路可以在封装/封装的芯片上选择唯一的内部节点/信号，以输出到一个或多个驱动器。在目标节点处可用的选定信号通过选择电路指向输出引脚，或直接指向输出引脚。在优选模式中，用于选择唯一节点的解码电路串联连接，允许大量的信号可用于分析，而不会对电路布局造成很大影响。由于与摘要相关的规则，本摘要不应用于索赔的构建。

8. 发明申请

US20070168796A1 On-chip sampling circuit and method 失效
公开(公告)号：US20070168796A1
公开(公告)日：2007-07-19
申请号：US11712041
申请日：2007-02-28
申请人： Chris Martin , James Johnson , Troy Manning , Brent Keeth
发明人： Chris Martin , James Johnson , Troy Manning , Brent Keeth
IPC分类号： G01R31/28
CPC分类号： G11C29/48 , G11C29/1201
摘要： Through addressing circuitry, a sampling circuit can choose a unique internal node/signal on an encapsulated/packaged chip to be output to one or more drivers. The chosen signals available at the target node are directed either through a select circuit to an output pin, or directly to an output pin. In a preferred mode, decode circuits used to select a unique node are serially connected, allowing for a large number of signals to be made available for analyzing without a large impact on circuit layout. Because of the rules related to abstracts, this abstract should not be used in the construction of the claims.

9. 发明申请

US20050172095A1 Dual edge command in DRAM 有权
标题翻译： DRAM中的双边沿命令
公开(公告)号：US20050172095A1
公开(公告)日：2005-08-04
申请号：US10767555
申请日：2004-01-29
申请人： Joo Choi , Troy Manning , Brent Keeth
发明人： Joo Choi , Troy Manning , Brent Keeth
IPC分类号： G06F12/00 , G11C7/10
CPC分类号： G11C11/4076 , G06F12/0207 , G06F13/1668 , G11C7/1072 , G11C7/1078 , G11C7/109 , G11C11/408 , G11C11/409
摘要： A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.
摘要翻译：一种在时钟信号的时钟周期期间通过给定数量的一个或多个集成电路存储器件中的每一个中的命令和地址引脚来增加命令和寻址信号的传送速率的技术。在一个示例实施例中，命令和地址信号在时钟信号的时钟周期的上升沿和下降沿上发送，以增加传输速率，并且基本上减少每个集成电路存储器件中所需的命令和地址引脚的数量。

10. 发明申请

US20050165999A1 Memory device having strobe terminals with multiple functions 失效
标题翻译：具有多个功能的选通端子的存储器件
公开(公告)号：US20050165999A1
公开(公告)日：2005-07-28
申请号：US10765310
申请日：2004-01-27
申请人： Joo Choi , Troy Manning
发明人： Joo Choi , Troy Manning
IPC分类号： G11C7/10 , G11C7/22 , G06F12/00
CPC分类号： G11C7/1078 , G11C7/1051 , G11C7/1063 , G11C7/1066 , G11C7/1072 , G11C7/109 , G11C7/1093 , G11C2207/2254
摘要： A memory device has data transceivers, write strobe transceivers, and read strobe transceivers. The data transceivers transfer input data to the memory device and transfer output data from the memory device. The write strobe transceivers transfer timing information of the input data. The read strobe transceivers transfer timing information of the output data. The memory device also has an auxiliary circuit for generating auxiliary information. The auxiliary information includes information different from the timing information of the input data and the output data. The auxiliary circuit uses the write and read transceivers to transfer the auxiliary information to and from the memory device.
摘要翻译：存储器件具有数据收发器，写选通收发器和读选通收发器。数据收发器将输入数据传输到存储器件并从存储器件传送输出数据。写入选通收发器传送输入数据的定时信息。读选通收发器传输输出数据的定时信息。存储装置还具有用于产生辅助信息的辅助电路。辅助信息包括与输入数据和输出数据的定时信息不同的信息。辅助电路使用写入和读取收发器将辅助信息传送到存储器件和从存储器件传送辅助信息。

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