专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07302068B2 Loudspeaker 失效
标题翻译：喇叭
公开(公告)号：US07302068B2
公开(公告)日：2007-11-27
申请号：US10480733
申请日：2002-06-19
申请人： Simon Andrew Longbottom , Andrew Matheson , Gareth McKevitt , Richard Topliss , Matthew John Pitts , Mark Richard Shepherd
发明人： Simon Andrew Longbottom , Andrew Matheson , Gareth McKevitt , Richard Topliss , Matthew John Pitts , Mark Richard Shepherd
IPC分类号： H04R25/00
CPC分类号： H04R17/00 , H04R2217/01 , H04R2499/11 , H04R2499/15
摘要： A loudspeaker for audible sound is described having a sound emitting element mounted onto a support structure and at least one actuator adapted to rotate said sound emitting element around a hinge section, wherein the actuator is made of piezoelectric material. In variants the actuator forms part of the hinge section and the loudspeaker is capable of generating vibrations through its support structure.
摘要翻译：描述了一种用于可听见的声音的扬声器，其具有安装在支撑结构上的声音发射元件和至少一个致动器，其适于围绕铰链部分旋转所述发音元件，其中致动器由压电材料制成。在变型中，致动器形成铰链部分的一部分，并且扬声器能够通过其支撑结构产生振动。

2. 发明授权

US07166952B2 Piezoelectric structures 失效
标题翻译：压电结构
公开(公告)号：US07166952B2
公开(公告)日：2007-01-23
申请号：US10491220
申请日：2002-09-26
申请人： Richard Topliss , David Livingstone , Andrew Matheson , Gareth McKevitt , Mark Richard Shepherd , Anthony Hooley
发明人： Richard Topliss , David Livingstone , Andrew Matheson , Gareth McKevitt , Mark Richard Shepherd , Anthony Hooley
IPC分类号： H01L41/08
CPC分类号： H01L41/094 , H01L41/098
摘要： An equivalent to the spatial separation either side of a nominal median plane that is inherent in a bimorph (with one piezoelectric layer on one side, and the second on the other side of the plane) is attained by structurally shaping the cross-section of a simple, single piezoelectric layer (11) such that it has a multiplicity of piezoelectric portions arranged in two generally-planar groups one either side of a median plane, so that any dimension change undergone by a portion on one side of that plane will tend to bend the whole device in the opposite direction to the same sense dimension change undergone by a portion on the other side of that plane. The simple, single layer acts as though it were a bimorph if elongate and beam-like, bending along its length, one end moving up/down, or back/forth, relative to the other but with any need for an internal, electrode.
摘要翻译：相当于双压电晶片中固有的标称中间平面的两侧（在一侧具有一个压电层，而在该平面的另一侧上的第二面）的空间分离是通过结构地成形一个简单的单个压电层（11），使得其具有多个压电部分，其布置在中间平面的任一侧上的两个大致平面的组中，使得由该平面的一侧上的部分所经历的任何尺寸变化将倾向于使整个设备沿与该平面另一侧的部分相同的感官尺寸变化的相反方向弯曲。简单的单层如同细长的和束状的，像其一样弯曲，一端向上/向下移动，或相对于另一端向前/向前弯曲，但是任何需要内部的电极。

3. 发明申请

US20050040736A1 Piezoelectric structures 失效
标题翻译：压电结构
公开(公告)号：US20050040736A1
公开(公告)日：2005-02-24
申请号：US10491220
申请日：2002-09-26
申请人： Richard Topliss , David Livingstone , Andrew Matheson , Gareth McKevitt , Mark Shepherd , Anthony Hooley
发明人： Richard Topliss , David Livingstone , Andrew Matheson , Gareth McKevitt , Mark Shepherd , Anthony Hooley
IPC分类号： H01L41/09 , H01L41/187 , H01L41/22 , H02N2/00 , H01L41/08
CPC分类号： H01L41/094 , H01L41/098
摘要： An equivalent to the spatial separation either side of a nominal median plane that is inherent in a bimorph (with one piezoelectric layer on one side, and the second on the other side of the plane) is attained by structurally shaping the cross-section of a simple, single piezoelectric layer (11) such that it has a multiplicity of piezoelectric portions arranged in two generally-planar groups one either side of a median plane, so that any dimension change undergone by a portion on one side of that plane will tend to bend the whole device in the opposite direction to the same sense dimension change undergone by a portion on the other side of that plane. The simple, single layer acts as though it were a bimorph if elongate and beam-like, bending along its length, one end moving up/down, or back/forth, relative to the other but with any need for an internal, electrode.
摘要翻译：相当于双压电晶片中固有的标称中间平面的两侧（在一侧具有一个压电层，而在该平面的另一侧上的第二面）的空间分离是通过结构地成形一个简单的单个压电层（11），使得其具有多个压电部分，其布置在中间平面的任一侧上的两个大致平面的组中，使得由该平面的一侧上的部分所经历的任何尺寸变化将倾向于使整个设备沿与该平面另一侧的部分相同的感官尺寸变化的相反方向弯曲。简单的单层如同细长的和束状的，像其一样弯曲，一端向上/向下移动，或相对于另一端向前/向前弯曲，但是任何需要内部的电极。

4. 发明申请

US20120045383A1 Method for the Manufacture of Photovoltaic Grade Silicon Metal 审中-公开
标题翻译：光伏级硅金属制造方法
公开(公告)号：US20120045383A1
公开(公告)日：2012-02-23
申请号：US13225770
申请日：2011-09-06
申请人： Andrew Matheson , John W. Koenitzer
发明人： Andrew Matheson , John W. Koenitzer
IPC分类号： C01B33/02 , C01B33/037 , C01B33/021
CPC分类号： C01B33/033 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： Disclosed is method for the production of silicon metal of a purity sufficient for the manufacture of commercial grade photovoltaic devices, by first reacting liquid silicon tetrachloride with molten sodium metal, and then by processing the reaction product to remove from the silicon metal, those reaction products which would be detrimental to the performance of the produced silicon metal in commercial grade photovoltaic devices used to generate electric power for commercial sale.
摘要翻译：公开了通过首先使液体四氯化硅与熔融金属钠反应，然后通过加工反应产物以从硅金属中除去的方法制备纯度足以制造商业级光伏器件的硅金属的方法，那些反应产物这对于用于商业销售电力的商业级光伏器件中生产的硅金属的性能是不利的。

5. 发明授权

US08673051B2 Manufacturing and applications of metal powders and alloys 有权
标题翻译：金属粉末和合金的制造和应用
公开(公告)号：US08673051B2
公开(公告)日：2014-03-18
申请号：US13350854
申请日：2012-01-16
申请人： Andrew Matheson
发明人： Andrew Matheson
IPC分类号： B22F1/00
CPC分类号： B22F9/24 , B22F1/02 , B22F3/10 , B22F3/1121 , B22F9/22 , B22F2999/00 , C23C14/3414 , H01G9/042 , B22F2003/244
摘要： The present invention is directed to a method of manufacture of metal or alloy powders that uses liquid phase reduction of a metal halide, or a mixture of metal halides, to produce a metal particle coated in salts produced as a reaction byproduct. The reaction conditions can be chosen to select a range of metal particle sizes, and the salt coating prevents oxidation (or reaction with other atmospheric gases) and permits a range of applications hitherto difficult to achieve using metal powders.
摘要翻译：本发明涉及一种制造金属或合金粉末的方法，该方法使用金属卤化物或金属卤化物的混合物进行液相还原，以产生以作为反应副产物生产的盐包被的金属颗粒。可以选择反应条件以选择一定范围的金属粒度，并且盐涂层防止氧化（或与其它大气气体反应），并且允许使用金属粉末难以实现的一系列应用。

6. 发明申请

US20120167716A1 Manufacturing and Applications of Metal Powders and Alloys 有权
标题翻译：金属粉末和合金的制造和应用
公开(公告)号：US20120167716A1
公开(公告)日：2012-07-05
申请号：US13350854
申请日：2012-01-16
申请人： Andrew Matheson
发明人： Andrew Matheson
IPC分类号： B22F1/00 , B22F9/02
CPC分类号： B22F9/24 , B22F1/02 , B22F3/10 , B22F3/1121 , B22F9/22 , B22F2999/00 , C23C14/3414 , H01G9/042 , B22F2003/244
摘要： The present invention is directed to a method of manufacture of metal or alloy powders that uses liquid phase reduction of a metal halide, or a mixture of metal halides, to produce a metal particle coated in salts produced as a reaction byproduct. The reaction conditions can be chosen to select a range of metal particle sizes, and the salt coating prevents oxidation (or reaction with other atmospheric gases) and permits a range of applications hitherto difficult to achieve using metal powders.
摘要翻译：本发明涉及一种制造金属或合金粉末的方法，该方法使用金属卤化物或金属卤化物的混合物进行液相还原，以产生以作为反应副产物生产的盐包被的金属颗粒。可以选择反应条件以选择一定范围的金属粒度，并且盐涂层防止氧化（或与其它大气气体反应），并且允许使用金属粉末难以实现的一系列应用。

7. 发明申请

US20100154475A1 PROCESS FOR THE PRODUCTION OF HIGH PURITY ELEMENTAL SILICON 审中-公开
标题翻译：生产高纯度元素硅的工艺
公开(公告)号：US20100154475A1
公开(公告)日：2010-06-24
申请号：US12695360
申请日：2010-01-28
申请人： Andrew Matheson , John W. Koenitzer
发明人： Andrew Matheson , John W. Koenitzer
IPC分类号： C01B33/021 , C03B19/02 , C03B32/00
CPC分类号： C01B33/033
摘要： This invention relates to a process for the production of high purity elemental silicon by reacting silicon tetrachloride with a liquid metal reducing agent in a two reactor vessel configuration. The first reactor vessel is used for reducing the silicon tetrachloride to elemental silicon, resulting in a mixture of elemental silicon and reducing metal chloride salt while the second reactor vessel is used for separating the elemental silicon from the reducing metal chloride salt. The elemental silicon produced using this invention is of sufficient purity for the production of silicon photovoltaic devices or other semiconductor devices.
摘要翻译：本发明涉及通过四氯化硅与液态金属还原剂在两个反应器容器结构中反应生产高纯度元素硅的方法。第一反应器容器用于将四氯化硅还原成元素硅，得到元素硅和还原金属氯化物盐的混合物，而第二反应器容器用于将元素硅与还原金属氯化物盐分离。使用本发明生产的元素硅对于生产硅光伏器件或其它半导体器件具有足够的纯度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式