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1. 发明申请

US20190289451A1 PROCESS MODULE FOR INCREASING THE RESPONSE OF BACKSIDE ILLUMINATED PHOTOSENSITIVE IMAGERS AND ASSOCIATED METHODS 审中-公开
公开(公告)号：US20190289451A1
公开(公告)日：2019-09-19
申请号：US16391540
申请日：2019-04-23
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H04W4/90 , H04H20/72 , H04H20/57 , H04H20/59
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

2. 发明授权

US10269861B2 Process module for increasing the response of backside illuminated photosensitive imagers and associated methods 有权
公开(公告)号：US10269861B2
公开(公告)日：2019-04-23
申请号：US15607706
申请日：2017-05-30
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L31/00 , H01L27/146 , H01L31/0232 , H01L31/18
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

3. 发明申请

US20180175093A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 审中-公开
公开(公告)号：US20180175093A1
公开(公告)日：2018-06-21
申请号：US15898357
申请日：2018-02-16
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
IPC分类号： H01L27/146
CPC分类号： H01L27/14638 , H01L27/14609 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

4. 发明申请

US20170025467A1 PROCESS MODULE FOR INCREASING THE RESPONSE OF BACKSIDE ILLUMINATED PHOTOSENSITIVE IMAGERS AND ASSOCIATED METHODS 有权
标题翻译：用于增加背光照明感光图像和相关方法的响应过程模块
公开(公告)号：US20170025467A1
公开(公告)日：2017-01-26
申请号：US15287430
申请日：2016-10-06
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14629 , H01L27/1464 , H01L27/14689 , H01L27/14692 , H01L31/0232 , H01L31/18
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

5. 发明授权

US12057464B2 Photosensitive imaging devices and associated methods 有权
公开(公告)号：US12057464B2
公开(公告)日：2024-08-06
申请号：US17491093
申请日：2021-09-30
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
IPC分类号： H01L27/146
CPC分类号： H01L27/14638 , H01L27/14609 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

6. 发明申请

US20170309669A9 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
公开(公告)号：US20170309669A9
公开(公告)日：2017-10-26
申请号：US14223938
申请日：2014-03-24
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
IPC分类号： H01L27/146
CPC分类号： H01L27/14638 , H01L27/14609 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

7. 发明授权

US09673243B2 Photosensitive imaging devices and associated methods 有权
公开(公告)号：US09673243B2
公开(公告)日：2017-06-06
申请号：US13770897
申请日：2013-02-19
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0352 , H01L31/0232 , H01L31/0236
CPC分类号： H01L27/14629 , H01L27/1461 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L31/0232 , H01L31/0236 , H01L31/0352
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

8. 发明授权

US09666636B2 Process module for increasing the response of backside illuminated photosensitive imagers and associated methods 有权
公开(公告)号：US09666636B2
公开(公告)日：2017-05-30
申请号：US15287430
申请日：2016-10-06
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/00 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14629 , H01L27/1464 , H01L27/14689 , H01L27/14692 , H01L31/0232 , H01L31/18
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

9. 发明公开

US20240339479A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 审中-公开
公开(公告)号：US20240339479A1
公开(公告)日：2024-10-10
申请号：US18749227
申请日：2024-06-20
申请人： SiOnyx, LLC
发明人： Homayoon HADDAD , Jutao JIANG , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
IPC分类号： H01L27/146
CPC分类号： H01L27/14638 , H01L27/14609 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

10. 发明授权

US10484855B2 Process module for increasing the response of backside illuminated photosensitive imagers and associated methods 有权
公开(公告)号：US10484855B2
公开(公告)日：2019-11-19
申请号：US16391540
申请日：2019-04-23
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jeffrey McKee , Jutao Jiang , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/00 , H04W4/90 , H04H20/72 , H04H20/59 , H04H20/57 , H04W48/16 , H01L27/146
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

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