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1. 发明授权

US06522201B1 RF amplifier having switched load impedance for back-off power efficiency 失效
标题翻译： RF放大器具有切换负载阻抗以实现退避功率效率
公开(公告)号：US06522201B1
公开(公告)日：2003-02-18
申请号：US09672384
申请日：2000-09-28
申请人： Shuo-Yuan Hsiao , Wei-Shu Zhou , Nanlei Y Larry Wang
发明人： Shuo-Yuan Hsiao , Wei-Shu Zhou , Nanlei Y Larry Wang
IPC分类号： H03G310
CPC分类号： H03G1/0088
摘要： Efficiency of an RF/microwave power amplifier is increased at a back-off power level by increasing the load resistance of the amplifier at the reduced output power level as compared to load impedance at a higher power level including full operating power. The different load impedances can be realized with two amplification units in parallel each having different load impedances. Alternatively, a single amplification path can be provided with an output impedance matching network which is selectively bypassed for increased impedance load during back-off power operation. In another embodiment, the output impedance matching network can include a shunt inductance which is selectively switched into the network to increase impedance for back-off power operation.
摘要翻译：与包括全部工作功率的较高功率电平下的负载阻抗相比，通过增加放大器在降低的输出功率电平下的负载电阻，RF /微波功率放大器的效率在退避功率电平上增加。可以通过具有不同负载阻抗的两个并联的放大单元实现不同的负载阻抗。或者，单个放大路径可以设置有输出阻抗匹配网络，其被选择性地旁路以在退避功率操作期间增加阻抗负载。在另一个实施例中，输出阻抗匹配网络可以包括分流电感，其被选择性地切换到网络中以增加用于退避功率操作的阻抗。

2. 发明授权

US06521972B1 RF power transistor having low parasitic impedance input feed structure 有权
标题翻译： RF功率晶体管具有低寄生阻抗输入馈送结构
公开(公告)号：US06521972B1
公开(公告)日：2003-02-18
申请号：US09675098
申请日：2000-09-28
申请人： Wei-Shu Zhou , Shuo-Yuan Hsiao , Nanlei Larry Wang
发明人： Wei-Shu Zhou , Shuo-Yuan Hsiao , Nanlei Larry Wang
IPC分类号： H01L27082
CPC分类号： H01L23/66 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An RF microwave power transistor has an input/output feed structure which functions as a low impedance microstrip line by providing a ground plane in close proximity to the feed structure on one surface of a semiconductor body. A second ground plane can be provided on an opposing surface of the semiconductor body with vias interconnecting the first and second ground planes. In addition to reducing feed impedance, a larger total transistor size can be provided before “odd mode oscillation” occurs.
摘要翻译： RF微波功率晶体管具有输入/输出馈送结构，其通过在半导体本体的一个表面上靠近馈电结构提供接地平面来起到低阻抗微带线的作用。可以在半导体主体的相对表面上设置第二接地平面，该通孔具有互连第一和第二接地平面的通孔。除了降低馈电阻抗之外，在“奇模振荡”发生之前，可以提供更大的总体晶体管尺寸。

3. 发明授权

US06326849B1 Isolation circuit for use in RF amplifier bias circuit 有权
标题翻译：用于RF放大器偏置电路的隔离电路
公开(公告)号：US06326849B1
公开(公告)日：2001-12-04
申请号：US09672387
申请日：2000-09-28
申请人： Nanlei Larry Wang , Shuo-Yuan Hsiao , Wei-Shu Zhou , Shihui Xu
发明人： Nanlei Larry Wang , Shuo-Yuan Hsiao , Wei-Shu Zhou , Shihui Xu
IPC分类号： H03F304
CPC分类号： H03F1/565 , H03F1/302 , H03F3/72 , H03F2203/7206
摘要： In an RF amplifier circuit having a plurality of transistor stages with each transistor having an input terminal for receiving an RF signal, a bias circuit is provided for applying a DC bias to the input terminal of a transistor. An isolation circuit connects a DC power supply to a bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated. The isolation circuit includes a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow and a reactive shunt path to ground which can comprise a capacitor or a serial inductor/capacitor circuit. The reactive serial path can comprise an inductor or an inductor/capacitor parallel circuit.
摘要翻译：在具有多个晶体管级的RF放大器电路中，每个晶体管具有用于接收RF信号的输入端，提供偏置电路用于向晶体管的输入端施加DC偏置。隔离电路将DC电源连接到偏置电路，由此来自电源端子的DC电压被施加到偏置电路，并且来自晶体管输入端子的RF信号被衰减。隔离电路包括一个反应串行路径，其允许直流电流的流动并且向RF电流提供阻抗，并且向地面提供可包括电容器或串联电感器/电容器电路的无功分流路径。反应串行路径可以包括电感器或电感器/电容器并联电路。

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