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1. 发明授权

US07504663B2 Semiconductor device with a floating gate electrode that includes a plurality of particles 有权
标题翻译：具有包括多个颗粒的浮栅电极的半导体器件
公开(公告)号：US07504663B2
公开(公告)日：2009-03-17
申请号：US11136705
申请日：2005-05-25
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L29/786 , H01L29/788
CPC分类号： H01L27/127 , H01L24/32 , H01L24/73 , H01L27/11526 , H01L27/11546 , H01L27/1214 , H01L27/13 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01014
摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.
摘要翻译：本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

2. 发明申请

US20050263767A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050263767A1
公开(公告)日：2005-12-01
申请号：US11136705
申请日：2005-05-25
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L21/77 , H01L21/8247 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786
CPC分类号： H01L27/127 , H01L24/32 , H01L24/73 , H01L27/11526 , H01L27/11546 , H01L27/1214 , H01L27/13 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01014
摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.
摘要翻译：本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

3. 发明申请

US20060071210A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060071210A1
公开(公告)日：2006-04-06
申请号：US11148289
申请日：2005-06-09
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L31/0376
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1285 , H01L27/1288 , H01L27/13 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78624
摘要： It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher yield at lower cost. In the present invention, a lightly doped impurity region is formed in a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer in a thin film transistor. The semiconductor layer is doped diagonally to the surface thereof using the gate electrode layer as a mask to form the lightly doped impurity region. Therefore, the properties of the thin film transistor can be minutely controlled.
摘要翻译：本发明的目的是制造具有所需性能的薄膜晶体管，而不会使步骤和装置复杂化。本发明的另一个目的是提供一种以更低的成本制造具有高可靠性和更好的电气特性并以较高产量获得的半导体器件的技术。在本发明中，在薄膜晶体管中由栅极电极层覆盖的半导体层的源区域侧或漏极区侧形成有轻掺杂杂质区。使用栅极电极层作为掩模将半导体层以其对面的方式对角地掺杂以形成轻掺杂杂质区域。因此，可以精细地控制薄膜晶体管的性质。

4. 发明申请

US20050274952A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050274952A1
公开(公告)日：2005-12-15
申请号：US11148426
申请日：2005-06-09
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L21/265 , H01L21/336 , H01L21/77 , H01L29/10 , H01L29/786
CPC分类号： H01L27/1214 , H01L21/26586 , H01L27/127 , H01L27/1274 , H01L29/66757 , H01L29/78624
摘要： In the invention, a low concentration impurity region is formed between a channel formation region and a source region or a drain region in a semiconductor layer and covered with a gate electrode layer in a thin film transistor The semiconductor layer is doped obliquely to the surface thereof using the gate electrode layer as a mask to form the low concentration impurity region. The semiconductor layer is formed to have an impurity region including an impurity element for imparting one conductivity which is different from conductivity of the thin film transistor, thereby being able to minutely control the properties of the thin film transistor.
摘要翻译：在本发明中，在半导体层中的沟道形成区域和源极区域或漏极区域之间形成低浓度杂质区域，并且在薄膜晶体管中被栅极电极层覆盖。半导体层倾斜地掺杂在其表面上使用栅极电极层作为掩模形成低浓度杂质区域。半导体层形成为具有包含用于赋予与薄膜晶体管的导电性不同的一种导电性的杂质元素的杂质区域，从而能够精细地控制薄膜晶体管的性质。

5. 发明申请

US20070063147A1 Doping device 审中-公开
标题翻译：兴奋剂
公开(公告)号：US20070063147A1
公开(公告)日：2007-03-22
申请号：US11148287
申请日：2005-06-09
申请人： Shunpei Yamazaki , Junichi Koezuka , Hiroto Shinoda , Osamu Nakamura , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Junichi Koezuka , Hiroto Shinoda , Osamu Nakamura , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01J27/00 , H01J7/24 , H05B31/26
CPC分类号： H01L27/127 , H01J37/3171 , H01L21/2652 , H01L21/26586 , H01L21/67213 , H01L27/1214 , H01L29/78621 , H01L29/78624 , H01L2029/7863
摘要： According to the present invention, a manufacturing device of a semiconductor device provided with a device for uniformly doping with an impurity element a large area substrate capable of multiple patterns for the purpose of mass-production is provided. The present invention has a feature that a cross section of an ion current is to be a linear shape or a rectangle, and the large area substrate is moved in a direction perpendicular to a longitudinal direction of the ion current while keeping the large area substrate inclined at a predetermined tilt angle θ to the ion current. In this invention, an incident angle of an ion beam is adjusted as changing the tile angle θ. By making the large area substrate inclined to a horizontal plane, the width of the longitudinal direction of the ion current can be shortened than the length of a side of the substrate.
摘要翻译：根据本发明，提供了一种半导体器件的制造装置，其具有用于均匀掺杂杂质元素的装置，该装置能够进行批量生产的能够具有多种图案的大面积基板。本发明的特征在于，离子电流的截面为直线形状或矩形，大面积基板沿垂直于离子电流的长度方向的方向移动，同时保持大面积基板倾斜以离子电流的预定倾斜角θ。在本发明中，随着瓦片角度θ的改变，离子束的入射角被调整。通过使大面积基板倾斜于水平面，离子电流的长度方向的宽度可以比基板的一侧的长度缩短。

6. 发明授权

US07868328B2 Semiconductor device having antenna over thin film integrated circuit 有权
标题翻译：具有天线薄膜集成电路的半导体器件
公开(公告)号：US07868328B2
公开(公告)日：2011-01-11
申请号：US12362462
申请日：2009-01-29
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L24/32 , H01L24/73 , H01L27/11526 , H01L27/11546 , H01L27/1214 , H01L27/13 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01014
摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.
摘要翻译：本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

7. 发明授权

US07745293B2 Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping 有权
标题翻译：制造薄膜晶体管的方法，其包括通过对角掺杂形成杂质区域
公开(公告)号：US07745293B2
公开(公告)日：2010-06-29
申请号：US11148289
申请日：2005-06-09
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L21/336
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1285 , H01L27/1288 , H01L27/13 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78624
摘要： It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher yield at lower cost. In the present invention, a lightly doped impurity region is formed in a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer in a thin film transistor. The semiconductor layer is doped diagonally to the surface thereof using the gate electrode layer as a mask to form the lightly doped impurity region. Therefore, the properties of the thin film transistor can be minutely controlled.
摘要翻译：本发明的目的是制造具有所需性能的薄膜晶体管，而不会使步骤和装置复杂化。本发明的另一个目的是提供一种以更低的成本制造具有高可靠性和更好的电气特性并以较高产量获得的半导体器件的技术。在本发明中，在薄膜晶体管中由栅极电极层覆盖的半导体层的源区域侧或漏极区侧形成有轻掺杂杂质区。使用栅极电极层作为掩模将半导体层以其对面的方式对角地掺杂以形成轻掺杂杂质区域。因此，可以精细地控制薄膜晶体管的性质。

8. 发明授权

US07211502B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07211502B2
公开(公告)日：2007-05-01
申请号：US10806353
申请日：2004-03-23
申请人： Shunpei Yamazaki , Tetsuji Yamaguchi , Atsuo Isobe
发明人： Shunpei Yamazaki , Tetsuji Yamaguchi , Atsuo Isobe
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , G02F1/136227 , H01L21/76882
摘要： A method for manufacturing a semiconductor device in which lower cost can be realized, a wiring with favorable coverage can be formed in a contact hole having a large aspect ratio, wiring capacitance can be reduced and a multilayer wiring can be formed, can be provided. In order to obtain the semiconductor device, the following steps are required; forming a first conductive film which serves as a barrier so as to be in contact with an organic insulating film with an opening portion formed; forming a second conductive film including aluminum so as to be in contact with the first conductive film; or forming a nitride film so as to be in contact with the organic insulating film with the opening portion formed; patterning the nitride film; forming a first conductive film which serves as a barrier so as to be in contact with the nitride film; forming a second conductive film including aluminum so as to be in contact with first conductive film; and thereafter selectively performing a heat treatment under reduced pressure or in normal pressure, and flattening the second conductive film.
摘要翻译：一种制造可以实现更低成本的半导体器件的方法，可以在具有大纵横比的接触孔中形成具有良好覆盖的布线，可以减少布线电容并且可以形成多层布线。为了获得半导体器件，需要以下步骤：形成作为屏障的第一导电膜，以与形成有开口部的有机绝缘膜接触; 形成包含铝的第二导电膜以与第一导电膜接触; 或形成氮化物膜，以与形成有开口部的有机绝缘膜接触; 图案化氮化膜; 形成用作阻挡层以与氮化膜接触的第一导电膜; 形成包含铝的第二导电膜以与第一导电膜接触; 然后选择性地在减压或常压下进行热处理，并使第二导电膜变平。

9. 发明申请

US20090194803A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090194803A1
公开(公告)日：2009-08-06
申请号：US12362462
申请日：2009-01-29
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L29/788 , H01L23/04
CPC分类号： H01L27/127 , H01L24/32 , H01L24/73 , H01L27/11526 , H01L27/11546 , H01L27/1214 , H01L27/13 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01014
摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.
摘要翻译：本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

10. 发明授权

US07504327B2 Method of manufacturing thin film semiconductor device 有权
标题翻译：制造薄膜半导体器件的方法
公开(公告)号：US07504327B2
公开(公告)日：2009-03-17
申请号：US11148426
申请日：2005-06-09
申请人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
IPC分类号： H01L21/425 , H01L21/00 , H01L21/84 , H01L21/8238 , H01L21/336
CPC分类号： H01L27/1214 , H01L21/26586 , H01L27/127 , H01L27/1274 , H01L29/66757 , H01L29/78624
摘要： In the invention, a low concentration impurity region is formed between a channel formation region and a source region or a drain region in a semiconductor layer and covered with a gate electrode layer in a thin film transistor The semiconductor layer is doped obliquely to the surface thereof using the gate electrode layer as a mask to form the low concentration impurity region. The semiconductor layer is formed to have an impurity region including an impurity element for imparting one conductivity which is different from conductivity of the thin film transistor, thereby being able to minutely control the properties of the thin film transistor.
摘要翻译：在本发明中，在半导体层中的沟道形成区域和源极区域或漏极区域之间形成低浓度杂质区域，并且在薄膜晶体管中被栅极电极层覆盖。半导体层倾斜地掺杂在其表面上使用栅极电极层作为掩模形成低浓度杂质区域。半导体层形成为具有包含用于赋予与薄膜晶体管的导电性不同的一种导电性的杂质元素的杂质区域，从而能够精细地控制薄膜晶体管的性质。

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