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1. 发明授权

US08486804B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08486804B2
公开(公告)日：2013-07-16
申请号：US11928912
申请日：2007-10-30
申请人： Shunpei Yamazaki , Masahiro Katayama , Yoshiaki Oikawa , Atsushi Hirose , Masayuki Sakakura
发明人： Shunpei Yamazaki , Masahiro Katayama , Yoshiaki Oikawa , Atsushi Hirose , Masayuki Sakakura
IPC分类号： H01L21/302
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
摘要翻译：一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。此外，放大器电路是包括薄膜晶体管的电流镜电路。此外，可以使用彩色胶片代替滤色器。

2. 发明授权

US08350621B2 Analog circuit and semiconductor device 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US08350621B2
公开(公告)日：2013-01-08
申请号：US13568186
申请日：2012-08-07
申请人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

3. 发明授权

US08035077B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08035077B2
公开(公告)日：2011-10-11
申请号：US12836142
申请日：2010-07-14
申请人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
发明人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
IPC分类号： H01L31/18
CPC分类号： H01L27/14665 , H01L27/1214 , H01L27/1266 , H01L27/14603 , H03F3/08
摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.
摘要翻译：通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。改善放大电路的输出特性，获得高可靠性的半导体器件。这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

4. 发明申请

US20110090006A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US20110090006A1
公开(公告)日：2011-04-21
申请号：US12907559
申请日：2010-10-19
申请人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose
IPC分类号： H01L27/085
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

5. 发明授权

US08242837B2 Analog circuit and semiconductor device 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US08242837B2
公开(公告)日：2012-08-14
申请号：US12907559
申请日：2010-10-19
申请人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

6. 发明授权

US07759629B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07759629B2
公开(公告)日：2010-07-20
申请号：US12043640
申请日：2008-03-06
申请人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
发明人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
IPC分类号： H01L31/18
CPC分类号： H01L27/14665 , H01L27/1214 , H01L27/1266 , H01L27/14603 , H03F3/08
摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.
摘要翻译：通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。改善放大电路的输出特性，获得高可靠性的半导体器件。这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

7. 发明申请

US20080230682A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080230682A1
公开(公告)日：2008-09-25
申请号：US12043640
申请日：2008-03-06
申请人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
发明人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
IPC分类号： H03F3/08 , H01L31/18
CPC分类号： H01L27/14665 , H01L27/1214 , H01L27/1266 , H01L27/14603 , H03F3/08
摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.
摘要翻译：通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。改善放大电路的输出特性，获得高可靠性的半导体器件。这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

8. 发明申请

US20100282947A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100282947A1
公开(公告)日：2010-11-11
申请号：US12836142
申请日：2010-07-14
申请人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
发明人： Shunpei Yamazaki , Atsushi Hirose , Koji Ono , Hotaka Maruyama
IPC分类号： H03F3/08 , H01L31/18 , H01L31/101
CPC分类号： H01L27/14665 , H01L27/1214 , H01L27/1266 , H01L27/14603 , H03F3/08
摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.
摘要翻译：通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。改善放大电路的输出特性，获得高可靠性的半导体器件。这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

9. 发明授权

US09041112B2 Semiconductor device including a current mirror circuit 有权
标题翻译：包括电流镜电路的半导体器件
公开(公告)号：US09041112B2
公开(公告)日：2015-05-26
申请号：US12707772
申请日：2010-02-18
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01L21/84 , H03F1/08 , G05F3/26 , H01L27/12
CPC分类号： H03F1/086 , G05F3/262 , H01L21/84 , H01L27/12 , H01L2224/16225 , H03F2200/513
摘要： In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.
摘要翻译：在半导体器件中，电流镜电路中设置有用于补偿寄生电阻的补偿电阻器，相对于电流镜电路中的寄生电阻器，电流镜电路至少包括两个薄膜晶体管。薄膜晶体管各自具有沟道形成区域和源极或漏极区域的岛状半导体膜，栅极绝缘膜，栅极电极和源极或漏极，并且补偿电阻器补偿任何一个的寄生电阻器栅电极，源电极和漏电极。此外，每个补偿电阻器具有包含与栅极电极，源极或漏极电极或源极或漏极区域相同的材料的导电层。

10. 发明授权

US08263926B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08263926B2
公开(公告)日：2012-09-11
申请号：US12752173
申请日：2010-04-01
申请人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
发明人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： H03F3/08 , H01L27/00 , H04N3/14
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

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