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1. 发明授权

US09324874B2 Display device comprising an oxide semiconductor 有权
标题翻译：包括氧化物半导体的显示装置
公开(公告)号：US09324874B2
公开(公告)日：2016-04-26
申请号：US12568120
申请日：2009-09-28
申请人： Shunpei Yamazaki , Kengo Akimoto , Atsushi Umezaki
发明人： Shunpei Yamazaki , Kengo Akimoto , Atsushi Umezaki
IPC分类号： H01L29/12 , H01L29/786 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/78606 , H01L29/7869
摘要： A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.
摘要翻译：驱动像素部的像素部和驱动电路形成在同一基板上。使用其中使用氧化物半导体层的反交错薄膜晶体管形成驱动电路的至少一部分，并且在用作与栅电极重叠的沟道形成区域的氧化物半导体层上设置沟道保护层。驱动电路以及像素部分设置在相同的基板上以降低制造成本。

2. 发明授权

US08319215B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08319215B2
公开(公告)日：2012-11-27
申请号：US12570481
申请日：2009-09-30
申请人： Shunpei Yamazaki , Kengo Akimoto , Atsushi Umezaki
发明人： Shunpei Yamazaki , Kengo Akimoto , Atsushi Umezaki
IPC分类号： H01L33/00
CPC分类号： H01L27/1225 , G02F1/13624 , H01L27/124 , H01L27/3276 , H01L29/7869
摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.
摘要翻译：随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。由于栅极线和信号线的数量增加，难以安装具有用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，这导致制造成本的增加。用于驱动像素部分的像素部分和驱动电路形成在一个衬底上。使用其中使用氧化物半导体的反交错薄膜晶体管形成驱动电路的至少一部分。驱动电路以及像素部分设置在相同的基板上，由此降低了制造成本。

3. 发明授权

US08344372B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08344372B2
公开(公告)日：2013-01-01
申请号：US12570498
申请日：2009-09-30
申请人： Shunpei Yamazaki , Kengo Akimoto , Atsushi Umezaki
发明人： Shunpei Yamazaki , Kengo Akimoto , Atsushi Umezaki
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/124 , G09G3/3233 , G09G2310/0286 , G09G2310/0297 , H01L21/02565 , H01L27/12 , H01L27/1214 , H01L27/1225 , H01L27/1259 , H01L29/12 , H01L29/4908 , H01L29/513 , H01L29/518
摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced.
摘要翻译：随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。栅极线和信号线的数量的增加使得难以安装具有用于通过接合等驱动栅极线和信号线的驱动电路的IC芯片，这导致制造成本的增加。驱动像素部的像素部和驱动电路设置在同一基板上。像素部分和驱动电路的至少一部分使用薄膜晶体管形成，其中每个使用氧化物半导体。像素部分和驱动电路均设置在相同的基板上，由此降低了制造成本。

4. 发明授权

US09935202B2 Transistor and display device comprising oxide semiconductor layer 有权
公开(公告)号：US09935202B2
公开(公告)日：2018-04-03
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

5. 发明授权

US09196633B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09196633B2
公开(公告)日：2015-11-24
申请号：US12556704
申请日：2009-09-10
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L33/00 , H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786
CPC分类号： H01L27/124 , G02F1/136204 , G02F1/136286 , H01L27/0266 , H01L27/1225 , H01L29/7869
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

6. 发明授权

US09111804B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09111804B2
公开(公告)日：2015-08-18
申请号：US13346963
申请日：2012-01-10
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

7. 发明授权

US08970106B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08970106B2
公开(公告)日：2015-03-03
申请号：US13360838
申请日：2012-01-30
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01J1/62 , H01J63/04 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

8. 发明授权

US08901552B2 Top gate thin film transistor with multiple oxide semiconductor layers 有权
标题翻译：具有多个氧化物半导体层的顶栅薄膜晶体管
公开(公告)号：US08901552B2
公开(公告)日：2014-12-02
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L21/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

9. 发明授权

US08890166B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08890166B2
公开(公告)日：2014-11-18
申请号：US12871184
申请日：2010-08-30
申请人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
发明人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L27/32 , H01L27/12
CPC分类号： H01L27/1251 , H01L27/1225 , H01L27/322 , H01L27/3262
摘要： An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译：本发明的目的是提供一种在同一基板上形成多种电路的发光器件，并且根据多种电路的特性提供多种薄膜晶体管。作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管，使用反向共面薄膜晶体管，其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管，分别。在用于像素的薄膜晶体管和发光元件之间，设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

10. 发明授权

US08729544B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08729544B2
公开(公告)日：2014-05-20
申请号：US13013054
申请日：2011-01-25
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
摘要翻译：本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层，漏电极层。有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。

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