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1. 发明授权

US08324621B2 Semiconductor device having oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的半导体器件
公开(公告)号：US08324621B2
公开(公告)日：2012-12-04
申请号：US12899962
申请日：2010-10-07
申请人： Shunpei Yamazaki , Junichiro Sakata , Kengo Akimoto , Kosei Noda
发明人： Shunpei Yamazaki , Junichiro Sakata , Kengo Akimoto , Kosei Noda
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , B82Y30/00 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L29/45 , H01L29/4908
摘要： Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.
摘要翻译：公开了一种高可靠性的半导体器件及其制造方法，其通过使用具有良好的电特性和高可靠性的晶体管作为开关元件来实现。半导体器件包括驱动电路部分和一个衬底上的像素部分，并且像素部分包括透光底栅晶体管。透光底栅晶体管包括：透明栅极电极层; 在所述栅极电极层上的氧化物半导体层，所述氧化物半导体层的表面层包括微晶纳米晶体组; 以及形成在所述氧化物半导体层上的源极和漏极电极层，所述源极和漏极电极层包括透光氧化物导电层。

2. 发明授权

US08431926B2 Semiconductor device having oxide semiconductor layer 有权
公开(公告)号：US08431926B2
公开(公告)日：2013-04-30
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/12 , H01L29/786
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

3. 发明申请

US20110057188A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110057188A1
公开(公告)日：2011-03-10
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78606 , H01L23/5329 , H01L27/1225 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
摘要翻译：本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。覆盖薄膜晶体管的氧化物半导体层的绝缘层含有硼元素或铝元素。通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

4. 发明授权

US08900916B2 Method for manufacturing semiconductor device including oxide semiconductor film 有权
标题翻译：包括氧化物半导体膜的半导体器件的制造方法
公开(公告)号：US08900916B2
公开(公告)日：2014-12-02
申请号：US12832329
申请日：2010-07-08
申请人： Shunpei Yamazaki , Miyuki Hosoba , Kosei Noda , Hiroki Ohara , Toshinari Sasaki , Junichiro Sakata
发明人： Shunpei Yamazaki , Miyuki Hosoba , Kosei Noda , Hiroki Ohara , Toshinari Sasaki , Junichiro Sakata
IPC分类号： H01L21/00
CPC分类号： H01L29/66969 , H01L21/477 , H01L27/1225 , H01L29/7869
摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
摘要翻译：一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物进行半导体层（脱水或脱氢的热处理）。氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层减少了

5. 发明授权

US08541780B2 Semiconductor device having oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的半导体器件
公开(公告)号：US08541780B2
公开(公告)日：2013-09-24
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/78606 , H01L23/5329 , H01L27/1225 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
摘要翻译：本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

6. 发明授权

US08324620B2 Semiconductor device having oxide semiconductor layer 有权
公开(公告)号：US08324620B2
公开(公告)日：2012-12-04
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/12 , H01L29/786
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

7. 发明授权

US08946700B2 Semiconductor device and manufacturing method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08946700B2
公开(公告)日：2015-02-03
申请号：US13552805
申请日：2012-07-19
申请人： Kengo Akimoto , Junichiro Sakata , Shunpei Yamazaki
发明人： Kengo Akimoto , Junichiro Sakata , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.
摘要翻译：本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏极上形成与所述氧化物半导体膜接触的绝缘膜。

8. 发明授权

US08492758B2 Oxide semiconductor film and semiconductor device 有权
公开(公告)号：US08492758B2
公开(公告)日：2013-07-23
申请号：US12887646
申请日：2010-09-22
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

9. 发明授权

US08378344B2 Light-emitting device with plural kinds of thin film transistors and circuits over one substrate 有权
标题翻译：具有多种薄膜晶体管和一个基板上的电路的发光器件
公开(公告)号：US08378344B2
公开(公告)日：2013-02-19
申请号：US12869327
申请日：2010-08-26
申请人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
发明人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
IPC分类号： H01L29/10
CPC分类号： H01L27/1225 , H01L27/322 , H01L27/3262
摘要： It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.
摘要翻译：本发明的目的是提供一种在一个衬底上形成多种电路的发光器件，并且提供与多种电路的特性对应的多种薄膜晶体管。将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管，并且将沟道蚀刻薄膜晶体管用于驱动器电路。像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。

10. 发明授权

US08115883B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08115883B2
公开(公告)日：2012-02-14
申请号：US12861190
申请日：2010-08-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Masayuki Sakakura , Yoshiaki Oikawa
发明人： Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Masayuki Sakakura , Yoshiaki Oikawa
IPC分类号： G02F1/136
CPC分类号： H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译：本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

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