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1. 发明申请

US20120299003A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US20120299003A1
公开(公告)日：2012-11-29
申请号：US13568186
申请日：2012-08-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L29/22 , H01L27/15 , H01L29/786
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

2. 发明申请

US20110090183A1 LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置和包括液晶显示装置的电子装置
公开(公告)号：US20110090183A1
公开(公告)日：2011-04-21
申请号：US12901023
申请日：2010-10-08
申请人： Shunpei YAMAZAKI , Ryo ARASAWA , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
发明人： Shunpei YAMAZAKI , Ryo ARASAWA , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
IPC分类号： G09G5/00 , G09G3/36
CPC分类号： G09G3/3614 , G02F1/133553 , G02F1/13439 , G02F1/1368 , G02F2201/123 , G02F2202/10 , G09G3/3648 , G09G3/3677 , G09G2300/08 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , H01L21/02164 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.
摘要翻译：在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被截止，并且所述图像信号在所述保持周期中保持至少30秒。像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

3. 发明申请

US20110090184A1 LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：逻辑电路和半导体器件
公开(公告)号：US20110090184A1
公开(公告)日：2011-04-21
申请号：US12902670
申请日：2010-10-12
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
IPC分类号： G06F3/038 , H03K19/0175
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/2092 , G09G3/3233 , G09G3/3291 , G09G3/36 , G09G3/3648 , G09G2300/0439 , G09G2300/08 , G09G2300/0842 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/08 , G11C19/184 , G11C19/28 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L29/7869 , H03K17/161 , H03K19/00315 , H03K19/096
摘要： To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.
摘要翻译：为了减小晶体管的漏电流，可以抑制逻辑电路的故障。逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。

4. 发明申请

US20110089975A1 LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：逻辑电路和半导体器件
公开(公告)号：US20110089975A1
公开(公告)日：2011-04-21
申请号：US12901057
申请日：2010-10-08
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
IPC分类号： H03K19/08 , H01L29/12
CPC分类号： H01L29/7869 , H01L22/34 , H01L27/0207 , H01L27/1225 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.
摘要翻译：逻辑电路包括具有使用氧化物半导体形成的沟道形成区域的薄膜晶体管，以及通过关闭薄膜晶体管而使端子中的一个成为浮置状态的电容器。氧化物半导体的氢浓度为5×1019（原子/ cm3）以下，因此在不产生电场的状态下基本上用作绝缘体。因此，可以减小薄膜晶体管的截止电流，从而通过薄膜晶体管抑制存储在电容器中的电荷的泄漏。因此，可以防止逻辑电路的故障。此外，可以通过减小薄膜晶体管的截止电流来降低在逻辑电路中流动的过量的电流，导致逻辑电路的低功耗。

5. 发明申请

US20110204368A1 TRANSISTOR AND DISPLAY DEVICE USING THE SAME 有权
标题翻译：使用相同的晶体管和显示器件
公开(公告)号：US20110204368A1
公开(公告)日：2011-08-25
申请号：US13026511
申请日：2011-02-14
申请人： Masashi TSUBUKU , Kosei NODA
发明人： Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/156
摘要： The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.
摘要翻译：频带尾部状态和带隙中的缺陷尽可能地减小，由此减小了在带隙附近或小于或等于带隙的能量的光吸收。在这种情况下，不是仅通过优化氧化物半导体膜的制造条件，而是通过使氧化物半导体成为本质上的本征半导体，或者非常接近本征半导体，减少照射光的作用的缺陷和光照射基本上减少了。也就是说，即使在以1×1013个光子/ cm 2·sec传递波长为350nm的光的情况下，也可以使用氧化物半导体形成晶体管的沟道区域，其中，阈值电压的变化小于或等于0.65 V.

6. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

7. 发明申请

US20110204362A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110204362A1
公开(公告)日：2011-08-25
申请号：US13026518
申请日：2011-02-14
申请人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/66969 , H01L29/78618
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了晶体管的小型化和电场的集中。栅电极的宽度减小，源电极层和漏电极层之间的间隔缩短。通过使用栅电极作为掩模以自对准的方式添加稀有气体，可以在氧化物半导体层中提供与沟道形成区域接触的低电阻区域。因此，即使栅电极的宽度，即栅极配线的线宽小，也能够提供高电位区域的高位置精度，能够实现晶体管的小型化。

8. 发明申请

US20110024740A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024740A1
公开(公告)日：2011-02-03
申请号：US12846572
申请日：2010-07-29
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Junichiro SAKATA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L27/1225 , H01L29/7869
摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.
摘要翻译：提供具有能够充分降低寄生电容的结构的半导体器件。此外，提高了驱动电路中薄膜晶体管的操作速度。在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅极薄膜晶体管中，以与栅极薄膜晶体管不重叠的方式形成源电极层和漏电极层，栅电极层。因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

9. 发明申请

US20120061663A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120061663A1
公开(公告)日：2012-03-15
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

10. 发明申请

US20110210325A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110210325A1
公开(公告)日：2011-09-01
申请号：US12871148
申请日：2010-08-30
申请人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/124 , G02F1/134309 , G02F1/13454 , G02F1/1368 , G02F2202/10 , H01L27/1225 , H01L27/1255
摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
摘要翻译：半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源电极层和漏极电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

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