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1. 发明申请

US20100102311A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 有权
标题翻译：氧化物半导体，薄膜晶体管和显示器件
公开(公告)号：US20100102311A1
公开(公告)日：2010-04-29
申请号：US12581187
申请日：2009-10-19
申请人： Shunichi ITO , Toshinari SASAKI , Miyuki HOSOBA , Junichiro SAKATA
发明人： Shunichi ITO , Toshinari SASAKI , Miyuki HOSOBA , Junichiro SAKATA
IPC分类号： H01L33/00 , H01L29/22 , H01L29/786
CPC分类号： H01L27/1225 , G09G3/20 , H01L27/1248 , H01L27/1259 , H01L29/247 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than or equal to 1 and less than 50. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.
摘要翻译：目的是控制氧化物半导体的组成和缺陷，另一个目的是增加薄膜晶体管的场效应迁移率，并获得具有减小的截止电流的足够的开 - 关比。解决方案是使用其组成由InMO 3（ZnO）m表示的氧化物半导体，其中M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素，m优选为非 - 整数大于或等于1且小于50. Zn的浓度低于In和M的浓度。氧化物半导体具有非晶结构。可以提供氧化物和氮化物层以防止氧化物半导体的污染和劣化。

2. 发明申请

US20100102312A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 有权
标题翻译：氧化物半导体，薄膜晶体管和显示器件
公开(公告)号：US20100102312A1
公开(公告)日：2010-04-29
申请号：US12581200
申请日：2009-10-19
申请人： Shunpei YAMAZAKI , Toshinari SASAKI , Miyuki HOSOBA , Shunichi ITO , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Toshinari SASAKI , Miyuki HOSOBA , Shunichi ITO , Junichiro SAKATA
IPC分类号： H01L29/786 , H01L29/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/45 , H01L29/78618
摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.
摘要翻译：目的是控制氧化物半导体的组成和缺陷。另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数）小于50），还含有氢。在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。此外，氧化物半导体具有非晶结构。这里，n优选为大于或等于50，更优选小于10的非整数。

3. 发明申请

US20100105163A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100105163A1
公开(公告)日：2010-04-29
申请号：US12582079
申请日：2009-10-20
申请人： Shunichi ITO , Miyuki HOSOBA , Hideomi SUZAWA , Shinya SASAGAWA , Taiga MURAOKA
发明人： Shunichi ITO , Miyuki HOSOBA , Hideomi SUZAWA , Shinya SASAGAWA , Taiga MURAOKA
IPC分类号： H01L21/336
CPC分类号： H01L29/66969 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/7869
摘要： An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.
摘要翻译：目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。在制造包括通道蚀刻反交错薄膜晶体管的半导体器件的方法中，使用使用作为曝光的多色调掩模形成的掩模层来蚀刻氧化物半导体膜和导电膜光透过该掩模以具有多个强度。在蚀刻步骤中，通过使用蚀刻气体的干蚀刻进行第一蚀刻步骤，并且通过使用蚀刻剂的湿蚀刻进行第二蚀刻步骤。

4. 发明申请

US20120286266A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120286266A1
公开(公告)日：2012-11-15
申请号：US13555579
申请日：2012-07-23
申请人： Hideomi SUZAWA , Shinya SASAGAWA , Taiga MURAOKA , Shunichi ITO , Miyuki HOSOBA
发明人： Hideomi SUZAWA , Shinya SASAGAWA , Taiga MURAOKA , Shunichi ITO , Miyuki HOSOBA
IPC分类号： H01L29/26
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/1288 , H01L29/66742 , H01L29/78621 , H01L29/7869
摘要： An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used.
摘要翻译：本发明的目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。在包括通道蚀刻的半导体器件的制造方法中倒置交错薄膜晶体管，氧化物半导体膜和导电膜使用掩模层进行蚀刻，该掩模层使用作为透光的多色调掩模形成，该透光掩模通过该曝光掩模透射，以便具有多个强度在蚀刻步骤中，通过使用蚀刻剂的湿式蚀刻进行第一蚀刻步骤，并且通过使用蚀刻气体的干法蚀刻进行第二蚀刻步骤。

5. 发明申请

US20090212686A1 INORGANIC EL BLUE-LIGHT EMITTING BODY, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：无机EL蓝色发光体，其制造方法和发光装置
公开(公告)号：US20090212686A1
公开(公告)日：2009-08-27
申请号：US12370770
申请日：2009-02-13
申请人： Shunichi ITO , Junichiro SAKATA
发明人： Shunichi ITO , Junichiro SAKATA
IPC分类号： H01J1/62 , C09K11/56
CPC分类号： C09K11/7701 , C09K11/584 , C09K11/7716 , H05B33/14
摘要： In manufacturing of an inorganic EL blue-light emitting body, at least a sulfide light emitting body and a rare-earth copper oxychaleogenide (MCuOS, wherein M is a rare-earth metal) are mixed and the obtained mixture is baked at 600° C. or more and 1000° C. or less, whereby the sulfide light emitting body can include the rare-earth copper oxychalcogenide (MCuOS).
摘要翻译：在无机EL蓝色发光体的制造中，至少混合有硫化物发光体和稀土类铜氧化物质（MCuOS，其中M为稀土金属），将得到的混合物在600℃ 以上且1000℃以下，由此硫化物发光体可以包括稀土类的氧化硫化钴（MCuOS）。

6. 发明申请

US20070265498A1 ELECTRONIC ENDOSCOPE CONNECTING MECHANISM 审中-公开
标题翻译：电子内窥镜连接机构
公开(公告)号：US20070265498A1
公开(公告)日：2007-11-15
申请号：US11746138
申请日：2007-05-09
申请人： Shunichi ITO
发明人： Shunichi ITO
IPC分类号： A61B1/00 , A61B1/04 , H04N7/18
CPC分类号： A61B1/00124 , A61B1/04
摘要： A connecting mechanism for an electronic endoscope system is provided. The connecting mechanism is for detachably connecting a scope and a processor unit of the electronic endoscope system. The connecting mechanism includes a rotational cylinder, a linear movable member, and a sensor. The rotational cylinder locks the scope-side connector section to the processor-side connector section by rotating the rotational cylinder, when the scope-side connector section is docked with the processor-side connector section. The linear movable member is moved linearly along a tangent of the rotational cylinder in cooperation with the rotation of the rotational cylinder. The sensor detects whether the linear movable member has arrived at a predetermined position. The predetermined position corresponds to a locking position where the scope-side connector section and the processor-side connector section are locked together by the rotational cylinder.
摘要翻译：提供了一种用于电子内窥镜系统的连接机构。连接机构用于可拆卸地连接电子内窥镜系统的镜架和处理器单元。连接机构包括旋转圆筒，线性可动构件和传感器。旋转气缸通过旋转旋转圆筒将范围侧连接器部分锁定到处理器侧连接器部分，当范围侧连接器部分与处理器侧连接器部分对接时。与旋转圆筒的旋转协调，线性可动构件沿旋转圆筒的切线线性移动。传感器检测线性可动件是否到达预定位置。预定位置对应于通过旋转圆筒将示范侧连接器部分和处理器侧连接器部分锁定在一起的锁定位置。

7. 发明申请

US20060287581A1 LIGHT SOURCE APPARATUS FOR ELECTRONIC ENDOSCOPE AND ELECTRONIC ENDOSCOPE HAVING THE LIGHT SOURCE APPARATUS 有权
标题翻译：用于电子内窥镜的光源装置和具有光源装置的电子内窥镜
公开(公告)号：US20060287581A1
公开(公告)日：2006-12-21
申请号：US11423478
申请日：2006-06-12
申请人： Shunichi ITO
发明人： Shunichi ITO
IPC分类号： A61B1/06
CPC分类号： G02B23/2461 , A61B1/0669
摘要： A light source apparatus for an electronic endoscope includes a light source; a rotary shutter including a pair of aperture controlling rotary plates; a first planetary gear mechanism including a first internal tooth gear, a first sun gear rotated with one aperture controlling rotary plate, and a first planet gear engaged with the first internal tooth gear and the first sun gear; a second planetary gear mechanism including a second internal tooth gear, a second sun gear rotated with the other aperture controlling rotary plate, and a second planet gear engaged with the second internal tooth gear and the second sun gear; and a carrier device which holds the first and second planet gears. An endless timing belt is installed on an output gear of a phase-difference motor and an input tooth portion of the second internal tooth gear, and includes a meshing portion.
摘要翻译：一种电子内窥镜用光源装置，具备：光源; 包括一对光圈控制旋转板的旋转快门; 第一行星齿轮机构，包括第一内齿齿轮，由一个孔控制旋转板旋转的第一太阳齿轮和与第一内齿齿轮和第一太阳齿轮啮合的第一行星齿轮; 第二行星齿轮机构，包括第二内齿齿轮，与另一个孔控制旋转板一起旋转的第二太阳齿轮，以及与第二内齿齿轮和第二太阳齿轮啮合的第二行星齿轮; 以及保持第一和第二行星齿轮的承载装置。无级定时带安装在相位差马达的输出齿轮和第二内齿齿轮的输入齿部上，并包括啮合部分。

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