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1. 发明授权

US06772045B2 System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device 失效
标题翻译：用于确定干洗时间的系统，确定干洗时间的方法，干洗方法和制造半导体装置的方法
公开(公告)号：US06772045B2
公开(公告)日：2004-08-03
申请号：US10231019
申请日：2002-08-30
申请人： Shuji Katsui , Masayuki Tanaka , Masaki Kamimura , Hiroshi Akahori , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Shigehiko Saida , Yoshitaka Tsunashima , Yuuichi Mikata
发明人： Shuji Katsui , Masayuki Tanaka , Masaki Kamimura , Hiroshi Akahori , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Shigehiko Saida , Yoshitaka Tsunashima , Yuuichi Mikata
IPC分类号： G06F1900
CPC分类号： H04L12/66 , Y10S438/905
摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.
摘要翻译：一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

2. 发明授权

US06989281B2 Cleaning method for a semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置制造装置的清洗方法
公开(公告)号：US06989281B2
公开(公告)日：2006-01-24
申请号：US10957609
申请日：2004-10-05
申请人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
发明人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
IPC分类号： H01L21/00
CPC分类号： H01L21/67253
摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.
摘要翻译：半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

3. 发明授权

US07145667B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, semiconductor device manufacturing system, and cleaning method for semiconductor device manufacturing apparatus 有权
公开(公告)号：US07145667B2
公开(公告)日：2006-12-05
申请号：US10230423
申请日：2002-08-29
申请人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
发明人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
IPC分类号： G01B11/28
CPC分类号： H01L21/67253
摘要： There is here disclosed a semiconductor device manufacturing method, comprising arranging at least one subject piece in a processing chamber, and starting a predetermined processing, applying a light having a predetermined wavelength to a monitoring section which is formed to enable transmission and reflection of the light and which is provided at a tip of a monitoring device to indirectly monitor a thickness of a film on the subject piece, and measuring a reflection light which is the application light is reflected near the monitoring section, while the light and the reflection light are isolated from an atmosphere and a substance in the chamber, measuring an amount of a substance on the monitoring section based on the reflection light, determining a thickness of a film on the subject piece based on the substance, and conducting the processing while controlling the processing based on the thickness of the film.

4. 发明申请

US20050059203A1 Cleaning method for a semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置制造装置的清洗方法
公开(公告)号：US20050059203A1
公开(公告)日：2005-03-17
申请号：US10957609
申请日：2004-10-05
申请人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
发明人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
IPC分类号： C23C16/52 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , G03B17/24
CPC分类号： H01L21/67253
摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.
摘要翻译：半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

5. 发明授权

US06794713B2 Semiconductor device and method of manufacturing the same including a dual layer raised source and drain 失效
标题翻译：半导体器件及其制造方法包括双层升高源极和漏极
公开(公告)号：US06794713B2
公开(公告)日：2004-09-21
申请号：US10655022
申请日：2003-09-05
申请人： Ichiro Mizushima , Shigehiko Saida , Takeo Furuhata , Yoshitaka Tsunashima
发明人： Ichiro Mizushima , Shigehiko Saida , Takeo Furuhata , Yoshitaka Tsunashima
IPC分类号： H01L2976
CPC分类号： H01L29/66477 , H01L21/28052 , H01L29/41775 , H01L29/41783 , H01L29/456 , H01L29/665
摘要： SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.
摘要翻译： SiGe或SiC膜选择性地在源极/漏极区域上生长，随后选择性地生长硅。通过使C或Ge浓度高于预定水平，可以在生长硅膜时生长具有高位错密度的单晶膜或多晶膜。源极/漏极区域中的每一个上的硅层不是单晶的，即使单晶也具有高密度的位错。因此，其上形成的硅膜是具有高位错密度的单晶硅膜或多晶硅膜的形式。可以通过离子注入来抑制在掺杂步骤中产生的离子的沟道引起的深度区域的杂质扩散。

6. 发明授权

US06713359B1 Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC 失效
标题翻译：半导体器件及其制造方法，包括包含SiGe或SiC的升高源极/漏极
公开(公告)号：US06713359B1
公开(公告)日：2004-03-30
申请号：US09564191
申请日：2000-05-04
申请人： Ichiro Mizushima , Shigehiko Saida , Takeo Furuhata , Yoshitaka Tsunashima
发明人： Ichiro Mizushima , Shigehiko Saida , Takeo Furuhata , Yoshitaka Tsunashima
IPC分类号： H01L21336
CPC分类号： H01L29/66477 , H01L21/28052 , H01L29/41775 , H01L29/41783 , H01L29/456 , H01L29/665
摘要： SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.
摘要翻译： SiGe或SiC膜选择性地在源极/漏极区域上生长，随后选择性地生长硅。通过使C或Ge浓度高于预定水平，可以在生长硅膜时生长具有高位错密度的单晶膜或多晶膜。源极/漏极区域中的每一个上的硅层不是单晶的，即使单晶也具有高密度的位错。因此，其上形成的硅膜是具有高位错密度的单晶硅膜或多晶硅膜的形式。可以通过离子注入来抑制在掺杂步骤中产生的离子的沟道引起的深度区域的杂质扩散。

7. 发明授权

US5766785A Method and apparatus for manufacturing a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5766785A
公开(公告)日：1998-06-16
申请号：US506134
申请日：1995-07-24
申请人： Yuuichi Mikata , Takashi Nakao , Yoshitaka Tsunashima
发明人： Yuuichi Mikata , Takashi Nakao , Yoshitaka Tsunashima
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , Y10S438/906
摘要： To react the surfaces of a plurality of semiconductor substrates to be treated to reducing gas in a treating chamber, their corresponding members having surfaces opposite to those surfaces of the substrates on which semiconductor devices are to be manufactured, are arranged. The amount of reducing agent supplied to the surfaces of the substrates is controlled by controlling the reaction of the surfaces of the members to the reducing gas, and the progress of the reducing reaction to each of the substrates is controlled accordingly.
摘要翻译：为了使待处理的多个半导体衬底的表面与处理室中的还原气体反应，它们的相应构件具有与要制造半导体器件的衬底的那些表面相反的表面。通过控制构件的表面与还原气体的反应来控制供给到基板的表面的还原剂的量，并且相应地控制对各基板的还原反应的进行。

8. 发明授权

US07372113B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07372113B2
公开(公告)日：2008-05-13
申请号：US10880508
申请日：2004-07-01
申请人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
IPC分类号： H01L21/314
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/28247 , H01L21/28282 , H01L21/28518 , H01L21/3185 , H01L21/76838 , H01L21/76897 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/792
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜，包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在下氮化硅膜比上述氮化硅膜高。

9. 发明授权

US06790723B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US06790723B2
公开(公告)日：2004-09-14
申请号：US09984404
申请日：2001-10-30
申请人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L218242
CPC分类号： H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76879 , H01L21/76897 , H01L23/485 , H01L27/10873 , H01L2924/0002 , H01L2924/00
摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

10. 发明授权

US06333547B1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06333547B1
公开(公告)日：2001-12-25
申请号：US09478369
申请日：2000-01-06
申请人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L2358
CPC分类号： H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76879 , H01L21/76897 , H01L23/485 , H01L27/10873 , H01L2924/0002 , H01L2924/00
摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
摘要翻译：使用六氯二硅烷（Si 2 Cl 6）作为用于形成可能与氧化硅膜的蚀刻速率差异很大的氮化硅膜的Si原料。氮化硅膜通过LPCVD法形成。

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