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    • 7. 发明申请
    • Cubic boron nitride/diamond composite layers
    • 立方氮化硼/金刚石复合层
    • US20060147282A1
    • 2006-07-06
    • US11207535
    • 2005-08-19
    • Igor BelloWenjun ZhangShuit-Tong Lee
    • Igor BelloWenjun ZhangShuit-Tong Lee
    • B23P15/28B32B19/00
    • C23C14/0647C23C16/02C23C16/27C23C16/342Y10T407/27Y10T428/24975Y10T428/265Y10T428/30
    • Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.
    • 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石(cBND)复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN(aBN / tBN)孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上:顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底,其可以包括预先对基底进行预处理,偏置增强的成核,用于消耗不期望的化学元素的蚀刻,用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。