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1. 发明授权

US06734126B2 Dielectric ceramic composition for microwave use 有权
标题翻译：用于微波使用的介电陶瓷组合物
公开(公告)号：US06734126B2
公开(公告)日：2004-05-11
申请号：US10168689
申请日：2002-07-25
申请人： Shugo Ohtsuki , Takeshi Shimada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura
发明人： Shugo Ohtsuki , Takeshi Shimada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura
IPC分类号： C04B3547
CPC分类号： C04B35/47 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3236 , C04B2235/3286 , C04B2235/5445 , C04B2235/604 , C04B2235/80
摘要： A dielectric ceramic composition for microwave use having a relative permittivity &egr;r of 35 to 45, Qf0 value of more than 50,000 GHz (at 7 GHz), and dielectric characteristic of &tgr;f=0±10 ppm/° C includes an La2O3.Al2O3.SrO.TiO2 based ceramic composition and a specific quantity of Ga2O3 to increase the Qf0 value and a specific amount of Pr2O3to control the &tgr;f value.
摘要翻译：包括相对介电常数ε为35至45，Qf0值大于50,000GHz（7GHz）的介电陶瓷组合物和tauf = 0±10ppm /℃的介电特性包括La 2 O 3·Al 2 O 3·S .TiO2基陶瓷组合物和一定量的Ga2O3以增加Qf0值和一定量的Pr2O3来控制tau值。

2. 发明申请

US20100167908A1 DIELECTRIC PORCELAIN COMPOSITION FOR USE IN ELECTRONIC DEVICES 有权
标题翻译：用于电子设备的电介质组合物
公开(公告)号：US20100167908A1
公开(公告)日：2010-07-01
申请号：US11993722
申请日：2005-06-24
申请人： Tomoyuki Tada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura , Takeshi Shimada
发明人： Tomoyuki Tada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura , Takeshi Shimada
IPC分类号： C04B35/465
CPC分类号： H01B3/12 , C01G23/002 , C01P2002/50 , C01P2002/72 , C01P2006/32 , C01P2006/40 , C04B35/465 , C04B35/6262 , C04B35/62695 , C04B2235/3208 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3232 , C04B2235/3286 , C04B2235/5436 , C04B2235/608 , C04B2235/77 , C04B2235/786 , C04B2235/80
摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant εr is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO2 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain α-Al2O3 in the structure can be obtained, and the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high.
摘要翻译：本发明提供一种用于电子器件的电介质瓷组合物，其中相对介电常数ε高，Qf值高，并且可以控制温度系数τf，同时保持谐振时的温度系数τf 频率小，Qf值高。根据本发明，当在基于LnAlO3-CaTiO3的电介质瓷组合物中，优化LnAlO 3和CaTiO 2的摩尔比并且Al被少量的Ga取代时，具有LnAlO 3 -CaTiO 3固溶体作为主相和作为第二相的Al-Ga类氧化物的固溶体，并且在该结构中基本上不含有α-Al 2 O 3，并且可以在将温度系数τf保持在谐振频率的同时控制温度系数τf 小，Qf值高。

3. 发明授权

US07910509B2 Dielectric porcelain composition for use in electronic devices 有权
标题翻译：用于电子设备的介电瓷组合物
公开(公告)号：US07910509B2
公开(公告)日：2011-03-22
申请号：US11993722
申请日：2005-06-24
申请人： Tomoyuki Tada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura , Takeshi Shimada
发明人： Tomoyuki Tada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura , Takeshi Shimada
IPC分类号： C04B35/465
CPC分类号： H01B3/12 , C01G23/002 , C01P2002/50 , C01P2002/72 , C01P2006/32 , C01P2006/40 , C04B35/465 , C04B35/6262 , C04B35/62695 , C04B2235/3208 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3232 , C04B2235/3286 , C04B2235/5436 , C04B2235/608 , C04B2235/77 , C04B2235/786 , C04B2235/80
摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant ∈r is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO3 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain α-Al2O3 in the structure can be obtained, and the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high.
摘要翻译：本发明提供一种用于电子器件的电介质瓷组合物，其中相对介电常数εr高，Qf值高，并且可以在保持谐振频率下的温度系数τf的同时控制温度系数τf 小，Qf值高。根据本发明，当在基于LnAlO3-CaTiO3的电介质瓷组合物中，LnAlO 3和CaTiO 3的摩尔比被优化并且Al被少量的Ga取代时，具有LnAlO 3 -TiTiO 3固溶体作为主相和作为第二相的Al-Ga类氧化物的固溶体，并且在该结构中基本上不含有α-Al 2 O 3，并且可以在将温度系数τf保持在谐振频率的同时控制温度系数τf 小，Qf值高。

4. 发明授权

US07825054B2 Semiconductor porcelain composition 有权
标题翻译：半导体瓷组成
公开(公告)号：US07825054B2
公开(公告)日：2010-11-02
申请号：US12063494
申请日：2005-08-11
申请人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
发明人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C04B35/6262 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6585 , H01G4/1227
摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
摘要翻译：本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制，室温下的电阻率可以显着降低。因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

5. 发明申请

US20090233785A1 SEMICONDUCTOR PORCELAIN COMPOSITION 有权
公开(公告)号：US20090233785A1
公开(公告)日：2009-09-17
申请号：US12063494
申请日：2005-08-11
申请人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
发明人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C04B35/6262 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6585 , H01G4/1227
摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
摘要翻译：本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制，室温下的电阻率可以显着降低。因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

6. 发明授权

US07893001B2 Semiconductor porcelain composition 有权
标题翻译：半导体瓷组成
公开(公告)号：US07893001B2
公开(公告)日：2011-02-22
申请号：US12855182
申请日：2010-08-12
申请人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
发明人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C04B35/6262 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6585 , H01G4/1227
摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
摘要翻译：本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制，室温下的电阻率可以显着降低。因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

7. 发明授权

US06413896B1 Method for producing dielectric porcelain composition for electronic device 失效
标题翻译：电子器件用电介质瓷组合物的制造方法
公开(公告)号：US06413896B1
公开(公告)日：2002-07-02
申请号：US09701931
申请日：2000-12-06
申请人： Takeshi Shimada , Kazuhiro Nishikawa , Kazuya Toji
发明人： Takeshi Shimada , Kazuhiro Nishikawa , Kazuya Toji
IPC分类号： C04B3500
CPC分类号： H01L21/31691 , C04B35/453 , C04B35/495 , H01B3/12
摘要： A method for producing X(BaZ.Sr1-Z)(Zn⅓.(TaM.Nb1-M)⅔)O3—Y(BaZ′.Sr1-Z′)(Ga½.Ta½)O3 solid solution system, characterized in that sintering is carried out at a temperature of 1400° C. to 1550° C. in an atmosphere of N2 containing oxygen in a concentration of 6% to 40% or sintering is carried out at a temperature of 1400° C. to 1550° C. after presintering at a temperature of 900° C. to 1300° C. This method is suitably used in order to constantly produce a dielectric porcelain composition for an electronic device which has a reduced temperature coefficient of resonance frequency and an excellent specific dielectric constant, and is uniform with respect to the quality distribution in one composition, by suppressing the evaporation of the Zn contained in a conventional porcelain composition of a perovskite type compound and adjusting the oxygen concentration in an atmosphere for sintering to a specific value without controlling a composition.
摘要翻译：制备X（BaZ.Sr1-Z）（Zn 1/3。（TaM.Nb1-M）⅔）O3-Y（BaZ'.Sr1-Z'）（Ga½.Ta½）O3固溶体系的方法，其特征在于烧结在含氧浓度为6〜40％的N 2的气氛中，在1400〜1550℃的温度下进行烧结，或在1400〜1550℃的温度下进行烧结。在900℃至1300℃的预烧结后，适当地使用该方法，以便不断地制造具有降低的共振频率的温度系数和优异的比介电常数的用于电子器件的电介质瓷组合物，以及通过抑制钙钛矿型化合物的常规陶瓷组合物中所含的Zn的蒸发，并且将烧结气氛中的氧浓度调节至特定值而不控制组成，相对于一种组合物中的质量分布是均匀的。

8. 发明申请

US20100323877A1 SEMICONDUCTOR PORCELAIN COMPOSITION 有权
公开(公告)号：US20100323877A1
公开(公告)日：2010-12-23
申请号：US12855182
申请日：2010-08-12
申请人： Takeshi SHIMADA , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
发明人： Takeshi SHIMADA , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C04B35/6262 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6585 , H01G4/1227
摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
摘要翻译：本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制，室温下的电阻率可以显着降低。因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

9. 发明授权

US06331498B1 Dielectric porcelain composition for electronic devices 失效
标题翻译：电瓷器用介质瓷组合物
公开(公告)号：US06331498B1
公开(公告)日：2001-12-18
申请号：US09581569
申请日：2000-06-23
申请人： Takeshi Shimada , Kazuhiro Nishikawa , Kazuya Toji
发明人： Takeshi Shimada , Kazuhiro Nishikawa , Kazuya Toji
IPC分类号： C04B35495
CPC分类号： C04B35/495
摘要： A dielectric ceramic composition for electronic devices, which exhibits &tgr;f and ∈r characteristics equivalent or superior to those of the dielectric ceramic composition of the prior art, can inhibit the evaporation of Zn from the composition to thereby facilitate the control of makeup of the composition, can give homogeneous ceramics through short-time sintering more stably, is improved particularly in permittivity (Qf) and controllability of temperature characteristics, and permits downsizing of the dielectric elements. This composition is a solid solution of XBa(Zn⅓.Ta⅔)O3—Y(BaZ.Sr1−Z)(Ga½.Ta½)O3 which contains a specific trivalent metal ion and has a Zn content adjusted to a predetermined level, wherein part of Ta contained in the XBa(Zn⅓.Ta⅔)O3 moiety has been replaced by Nb. The composition is improved not only in permittivity by virtue of the above replacement but also in the degree of sintering by virtue of the above trivalent metal, i.e., Ga contained in the Y(BaZ.Sr1−Z)(Ga½.Ta½)O3 moiety, thus attaining the effects of improvement in permittivity and control of temperature characteristics simultaneously.
摘要翻译：具有与现有技术的介电陶瓷组合物相当或优于现有技术的电介质陶瓷组合物的电子器件的电介质陶瓷组合物可以抑制Zn从组合物的蒸发，从而有助于控制组合物的组成组合物可以通过短时间烧结得到均匀的陶瓷，特别是在介电常数（Qf）和温度特性的可控性方面得到改善，并且允许电介质元件的小型化。该组合物是含有特定的三价金属离子并且Zn含量调节至预定水平的XBa（Zn1/3.Ta⅔）O 3-Y（BaZ.Sr 1 -Z）（Ga 1/2.T a 1/2）O 3的固溶体，其中部分包含在XBa（Zn 1/3 Ta）O 3部分中的Ta已被Nb替代。通过上述替代，组合物不仅在介电常数方面得到改善，而且由于上述三价金属，即包含在Y（BaZ.Sr 1 -Z）（Ga 1/2 .Ta 1/2）O 3部分中的Ga ，从而达到提高介电常数和同时控制温度特性的效果。

10. 发明申请

US20080170977A1 Semiconductor Porcelain Composition and Method of Producing the Same 失效
标题翻译：半导体陶瓷组合物及其制备方法
公开(公告)号：US20080170977A1
公开(公告)日：2008-07-17
申请号：US11912799
申请日：2006-04-28
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： C01F17/00 , C01G23/04
CPC分类号： C04B35/4682 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/62635 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/96 , H01C7/025 , H01C17/06533 , H01G4/1227
摘要： To provide a semiconductor porcelain composition in which a portion of Ba of BaTiO3 is substituted by Bi-Na, which is capable of inhibiting evaporation of Bi in a calcining step, inhibiting the formation of secondary phases by preventing a compositional shift of Bi-Na, further reducing a resistivity at room temperature, and inhibiting a scattering in a Curie temperature, and a method of producing the same. By separately preparing a composition of (BaQ)TiO3 (Q is a semiconductive dopant) and a composition of (BiNa)TiO3, and calcining the composition of (BaQ)TiO3 at a comparatively high temperature and calcining the composition of (BiNa)TiO3 at a comparatively low temperature to thereby calcine the compositions at their respective optimum temperatures, evaporation of Bi in the composition of (BiNa)TiO3 can be inhibited, formation of secondary phases can be inhibited by preventing a compositional shift of Bi-Na; and by mixing, forming and sintering the calcined powders, a semiconductor porcelain composition having a small resistivity at room temperature and being inhibited from a scattering in the Curie temperature can be provided.
摘要翻译：为了提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na所取代，Bi-Na能够在煅烧步骤中抑制Bi的蒸发，通过防止二次相的形成来抑制 Bi-Na的组成位移，进一步降低室温下的电阻率，抑制居里温度的散射及其制造方法。通过分别制备（BaQ）TiO 3（Q是半导体掺杂剂）和（BiNa）TiO 3组合物的组合物，并煅烧组合物（BaQ）在比较高的温度下煅烧TiO 2，并在比较低的温度下煅烧（BiNa）TiO 3的组成，从而在各自的最适温度下焙烧组合物，蒸发Bi 可以抑制（BiNa）TiO 3 3的组成，可以通过防止Bi-Na的组成偏移来抑制二次相的形成。并且通过混合，形成和烧结煅烧粉末，可以提供在室温下具有小的电阻率并被抑制居里温度的散射的半导体瓷组合物。

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