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1. 发明授权

US08437166B1 Word line driver cell layout for SRAM and other semiconductor devices 有权
标题翻译：用于SRAM和其他半导体器件的字线驱动器单元布局
公开(公告)号：US08437166B1
公开(公告)日：2013-05-07
申请号：US13297296
申请日：2011-11-16
申请人： Shu Cheng Huang , Hsin-Hsin Ko , Jung-Hsuan Chen , Chiting Cheng
发明人： Shu Cheng Huang , Hsin-Hsin Ko , Jung-Hsuan Chen , Chiting Cheng
IPC分类号： G11C5/06
CPC分类号： G11C11/413
摘要： A word line driver cell suitable for RAM devices such as SRAM, static random access memory devices, is provided. The word line driver cell is compatible with double pattern processing techniques and enables the formation of all word lines from a single metal layer which, in turn, enables overlying and underlying metal levels to be used for other features such as signal lines for word line decoders. A power mesh is formed using multiple metal layers and the formation of all the word lines from a single metal layer enables VDD and VSS power lines that are formed from an overlying layer to extend orthogonal to the cell direction and include wider widths reducing metal line resistance and increasing the deliverable power.
摘要翻译：提供了适用于诸如SRAM，静态随机存取存储器件等RAM装置的字线驱动单元。字线驱动器单元与双模式处理技术兼容，并且能够从单个金属层形成所有字线，这又可以使覆盖和下层金属电平用于其他特征，例如用于字线解码器的信号线。使用多个金属层形成功率网，并且从单个金属层形成所有字线使得由上层形成的VDD和VSS电源线能够垂直于电池方向延伸并且包括较宽的宽度，从而减小金属线路电阻并增加可交付的能力。

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