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1. 发明授权

US07696546B2 Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same 失效
标题翻译：具有包括硅化物层的叠层以便降低布线电阻的布线层的固态成像装置及其制造方法
公开(公告)号：US07696546B2
公开(公告)日：2010-04-13
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

2. 发明授权

US07485939B2 Solid-state imaging device having a defect control layer and an inversion layer between a trench and a charge accumulating area 有权
标题翻译：具有缺陷控制层和沟槽与电荷累积区之间的反型层的固态成像装置
公开(公告)号：US07485939B2
公开(公告)日：2009-02-03
申请号：US11435098
申请日：2006-05-17
申请人： Shouzi Tanaka , Ryohei Miyagawa
发明人： Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an impurity concentration in the inversion layer is at least twice as high as an impurity concentration in the photo diode.
摘要翻译：在（a）沿着沟槽表面形成的用于隔离像素调用的缺陷控制层和（b）光电二极管之间的边界部分中形成反转层。缺陷控制层为P型，光电二极管和反型层为N型。这里，反转层中的杂质浓度至少是光电二极管中杂质浓度的两倍。

3. 发明申请

US20090278181A1 SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US20090278181A1
公开(公告)日：2009-11-12
申请号：US12434474
申请日：2009-05-01
申请人： Shouzi TANAKA , Ryohei Miyagawa
发明人： Shouzi TANAKA , Ryohei Miyagawa
IPC分类号： H01L31/112 , H01L21/265
CPC分类号： H01L27/14603 , H01L21/26586 , H01L27/1463 , H01L27/14689
摘要： A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region; a gate electrode formed over the element formation region located between the photodiode region and the floating diffusion region, and formed so that both ends of the gate electrode respectively overlap a part of the photodiode region and a part of the floating diffusion region; and an inactive layer formed in a region located in a bottom portion and sidewall portions of the trench isolation region. An impurity concentration in a region located under the gate electrode in the inactive layer is lower than that in a region other than the region located under the gate electrode in the inactive layer.
摘要翻译：固态图像传感器包括：沟槽隔离区域; 用于将入射光转换为信号电荷并在其中累积信号电荷的光电二极管区域; 用于累积光电二极管区域的信号电荷的浮动扩散区域; 栅电极，形成在位于光电二极管区域和浮动扩散区域之间的元件形成区域上，并且形成为使得栅电极的两端分别与光电二极管区域的一部分和浮动扩散区域的一部分重叠; 以及形成在位于沟槽隔离区域的底部和侧壁部分中的区域中的非活性层。在非活性层中位于栅电极下方的区域中的杂质浓度低于非活性层中位于栅电极下方的区域以外的区域中的杂质浓度。

4. 发明授权

US07936036B2 Solid-state image sensor with two different trench isolation implants 有权
标题翻译：具有两个不同沟槽隔离植入物的固态图像传感器
公开(公告)号：US07936036B2
公开(公告)日：2011-05-03
申请号：US12434474
申请日：2009-05-01
申请人： Shouzi Tanaka , Ryohei Miyagawa
发明人： Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L21/26586 , H01L27/1463 , H01L27/14689
摘要： A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region; a gate electrode formed over the element formation region located between the photodiode region and the floating diffusion region, and formed so that both ends of the gate electrode respectively overlap a part of the photodiode region and a part of the floating diffusion region; and an inactive layer formed in a region located in a bottom portion and sidewall portions of the trench isolation region. An impurity concentration in a region located under the gate electrode in the inactive layer is lower than that in a region other than the region located under the gate electrode in the inactive layer.
摘要翻译：固态图像传感器包括：沟槽隔离区域; 用于将入射光转换为信号电荷并在其中累积信号电荷的光电二极管区域; 用于累积光电二极管区域的信号电荷的浮动扩散区域; 栅电极，形成在位于光电二极管区域和浮动扩散区域之间的元件形成区域上，并且形成为使得栅电极的两端分别与光电二极管区域的一部分和浮动扩散区域的一部分重叠; 以及形成在位于沟槽隔离区域的底部和侧壁部分中的区域中的非活性层。在非活性层中位于栅电极下方的区域中的杂质浓度低于非活性层中位于栅电极下方的区域以外的区域中的杂质浓度。

5. 发明授权

US07745859B2 Solid-state image sensing apparatus and fabrication method thereof 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07745859B2
公开(公告)日：2010-06-29
申请号：US11651022
申请日：2007-01-09
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a substrate, a surface shield layer of the first conductivity type provided in a surface portion of the substrate which is located above the signal storage portion, a gate electrode provided over the substrate in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the substrate which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the substrate which is located under the gate electrode in adjacent relation to one end of the surface shield layer.
摘要翻译：固体摄像装置具有设置在基板内的第二导电型信号存储部，设置在位于信号存储部上方的基板的表面部的第一导电类型的表面屏蔽层，栅极电极，其设置在基板上，与信号存储部分的至少一端相邻;以及第二导电类型的漏极区，设置在基板的表面部分中，该表面部分在与表面屏蔽层相反的一侧，当从栅电极。第一导电类型的读取控制层进一步设置在基板的表面部分中，该表面部分位于栅极电极下面，与表面屏蔽层的一端相邻。

6. 发明申请

US20060261386A1 Solid-state imaging device and manufacturing method of the same 有权
标题翻译：固态成像装置及其制造方法相同
公开(公告)号：US20060261386A1
公开(公告)日：2006-11-23
申请号：US11435098
申请日：2006-05-17
申请人： Shouzi Tanaka , Ryohei Miyagawa
发明人： Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/113
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (a) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an impurity concentration in the inversion layer is at least twice as high as an impurity concentration in the photo diode.
摘要翻译：在（a）沿着沟槽表面形成的用于隔离像素调用的缺陷控制层和（a）光电二极管之间的边界部分中形成反转层。缺陷控制层为P型，光电二极管和反型层为N型。这里，反转层中的杂质浓度至少是光电二极管中杂质浓度的两倍。

7. 发明申请

US20080173911A1 SOLID-STATE IMAGING DEVICE HAVING WIRING LAYER WHICH INCLUDES LAMINATION OF SILICIDE LAYER IN ORDER TO REDUCE WIRING RESISTANCE, AND MANUFACTURING METHOD FOR THE SAME 失效
标题翻译：具有包括层状硅酸盐层的层状结构的固态成像装置，以降低接线电阻及其制造方法
公开(公告)号：US20080173911A1
公开(公告)日：2008-07-24
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/0224 , H01L21/768
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

8. 发明申请

US20070241374A1 Solid-state image sensing apparatus and fabrication method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US20070241374A1
公开(公告)日：2007-10-18
申请号：US11651022
申请日：2007-01-09
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a semiconductor substrate or a well each of a first conductivity type to store a signal charge obtained through a photoelectric conversion, a surface shield layer of the first conductivity type provided in a surface portion of the semiconductor substrate or the well which is located above the signal storage portion, a gate electrode provided over the semiconductor substrate or the well in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the semiconductor substrate or the well which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the semiconductor substrate or the well which is located under the gate electrode in adjacent relation to one end of the surface shield layer.
摘要翻译：固态摄像装置具有设置在半导体衬底内的第二导电类型的信号存储部分或者是通过光电转换获得的信号电荷的第一导电类型的阱，第一导电性的表面屏蔽层设置在半导体衬底或位于信号存储部分上方的阱的表面部分中的栅极电极，设置在半导体衬底或阱上的栅电极相邻于信号存储部分的至少一端，漏极所述第二导电类型的区域设置在所述半导体衬底或所述阱的表面部分中，所述第二导电类型的区域在从所述栅电极观察时位于与所述表面屏蔽层相反的一侧。第一导电类型的读取控制层进一步设置在半导体衬底的表面部分中，或位于栅电极下方的与邻近表面屏蔽层的一端相邻的阱中。

9. 发明申请

US20070109432A1 Solid state imaging device, method for driving the same, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US20070109432A1
公开(公告)日：2007-05-17
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译：固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

10. 发明授权

US4895107A Photo chemical reaction apparatus 失效
标题翻译：照相化学反应装置
公开(公告)号：US4895107A
公开(公告)日：1990-01-23
申请号：US215175
申请日：1988-07-05
申请人： Kensaku Yano , Akihiko Furukawa , Ryohei Miyagawa , Yoshinori Iida
发明人： Kensaku Yano , Akihiko Furukawa , Ryohei Miyagawa , Yoshinori Iida
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23C16/54 , H01L21/263 , H01L21/31
CPC分类号： C23C16/4409 , C23C16/482 , C23C16/488 , C23C16/54
摘要： A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.
摘要翻译：光化学反应装置包括使用分隔板分隔成反应室的真空容器和载体室。隔板具有开口，承载托盘可以可拆卸地插入该开口中，以使得反作用气室被密封。托盘具有与透光窗相对的基板保持架。反应气体在该窗口和待加工的基板之间流动，安装在基板保持器上。

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