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1. 发明申请

US20130091926A1 Systems and Methods for Measuring, Monitoring and Controlling Ozone Concentration 有权
标题翻译：测量，监测和控制臭氧浓度的系统和方法
公开(公告)号：US20130091926A1
公开(公告)日：2013-04-18
申请号：US13271471
申请日：2011-10-12
申请人： ShouQian Shao , Jay DeDontney , Jason Wright
发明人： ShouQian Shao , Jay DeDontney , Jason Wright
IPC分类号： G01N25/00
CPC分类号： G01F1/74 , G01N25/18 , G01N33/0039 , Y02A50/247
摘要： Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of the total gas mixture properties, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to vacuum processing chamber, using either novel ozone sensor or existing mass flow meter or controller.
摘要翻译：基于总气体混合物性质的测量，确定臭氧和氧气混合物中的臭氧浓度的系统和方法可以使得能够在低压设置下测量臭氧浓度。使用新型臭氧传感器或现有的质量流量计或控制器，可以将臭氧浓度测定应用于真空处理室。

2. 发明申请

US20130092084A1 Systems and Methods for Measuring, Monitoring and Controlling Ozone Concentration 有权
标题翻译：测量，监测和控制臭氧浓度的系统和方法
公开(公告)号：US20130092084A1
公开(公告)日：2013-04-18
申请号：US13271449
申请日：2011-10-12
申请人： ShouQian Shao , Jay DeDontney , Jason Wright
发明人： ShouQian Shao , Jay DeDontney , Jason Wright
IPC分类号： G01N7/00 , C23C16/52 , B23P11/00 , C23C16/455
CPC分类号： C23C16/52 , C23C16/45512 , C23C16/45557 , G01N7/00 , Y10T137/0402
摘要： Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of a total mass flow and a corresponding change in a chamber pressure accepting the mixture flow, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to a vacuum processing chamber, enabling precision semiconductor processing.
摘要翻译：基于总质量流量的测量和接受混合物流动的室压力的相应变化来确定臭氧和氧气的混合物中的臭氧浓度的系统和方法可以使得能够在低压设置下测量臭氧浓度。可以将臭氧浓度测定应用于真空处理室，从而实现精密的半导体处理。

3. 发明授权

US08925481B2 Systems and methods for measuring, monitoring and controlling ozone concentration 有权
标题翻译：用于测量，监测和控制臭氧浓度的系统和方法
公开(公告)号：US08925481B2
公开(公告)日：2015-01-06
申请号：US13271449
申请日：2011-10-12
申请人： ShouQian Shao , Jay DeDontney , Jason Wright
发明人： ShouQian Shao , Jay DeDontney , Jason Wright
IPC分类号： B05C11/10 , G01N7/00 , C23C16/52 , C23C16/455
CPC分类号： C23C16/52 , C23C16/45512 , C23C16/45557 , G01N7/00 , Y10T137/0402
摘要： Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of a total mass flow and a corresponding change in a chamber pressure accepting the mixture flow, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to a vacuum processing chamber, enabling precision semiconductor processing.
摘要翻译：基于总质量流量的测量和接受混合物流动的室压力的相应变化来确定臭氧和氧气的混合物中的臭氧浓度的系统和方法可以使得能够在低压设置下测量臭氧浓度。可以将臭氧浓度测定应用于真空处理室，从而实现精密的半导体处理。

4. 发明授权

US08851010B2 Systems and methods for measuring, monitoring and controlling ozone concentration 有权
标题翻译：用于测量，监测和控制臭氧浓度的系统和方法
公开(公告)号：US08851010B2
公开(公告)日：2014-10-07
申请号：US13271471
申请日：2011-10-12
申请人： ShouQian Shao , Jay DeDontney , Jason Wright
发明人： ShouQian Shao , Jay DeDontney , Jason Wright
IPC分类号： G01F1/76 , G01N25/20 , G01N33/00 , G01F1/74 , G01N25/18 , B05C11/06
CPC分类号： G01F1/74 , G01N25/18 , G01N33/0039 , Y02A50/247
摘要： Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of the total gas mixture properties, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to vacuum processing chamber, using either novel ozone sensor or existing mass flow meter or controller.
摘要翻译：基于总气体混合物性质的测量，确定臭氧和氧气混合物中的臭氧浓度的系统和方法可以使得能够在低压设置下测量臭氧浓度。使用新型臭氧传感器或现有的质量流量计或控制器，可以将臭氧浓度测定应用于真空处理室。

5. 发明申请

US20130149469A1 COMBINATORIAL RF BIAS METHOD FOR PVD 有权
标题翻译： PVD的组合RF偏置方法
公开(公告)号：US20130149469A1
公开(公告)日：2013-06-13
申请号：US13316882
申请日：2011-12-12
申请人： ShouQian Shao , Kent Riley Child , James Tsung , Hong Sheng Yang
发明人： ShouQian Shao , Kent Riley Child , James Tsung , Hong Sheng Yang
IPC分类号： C23C16/04
CPC分类号： C23C14/044 , C23C14/34 , C23C14/505 , H01J37/32651 , H01J37/34
摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.
摘要翻译：在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。屏蔽还可以通过低通滤波器连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。陶瓷插入件可用于选择孔径的尺寸。陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

6. 发明授权

US08613863B2 Methods for selective etching of a multi-layer substrate 有权
标题翻译：选择性蚀刻多层基板的方法
公开(公告)号：US08613863B2
公开(公告)日：2013-12-24
申请号：US13305949
申请日：2011-11-29
申请人： Jinhong Tong , Frederick Fulgenico , ShouQian Shao
发明人： Jinhong Tong , Frederick Fulgenico , ShouQian Shao
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32134 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum or tungsten layer on a TiN layer on an HfO2 or ZrO2 layer on a silicon substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a first wet etch using a mixture of NH4OH and H2O2 to selectively etch the TiN layer, and a second wet etch using a dilute mixture of HF and HCl to selectively etch the HfO2 or ZrO2 layer.
摘要翻译：公开了一种用于在硅衬底上的HfO 2或ZrO 2层上的TiN层上选择性蚀刻包括铂或钨层的多层金属氧化物堆叠的方法。在一些实施例中，该方法包括用于选择性蚀刻铂层的物理溅射工艺，接着使用NH 4 OH和H 2 O 2的混合物进行第一次湿式蚀刻以选择性地蚀刻TiN层，以及使用HF和 HCl以选择性地蚀刻HfO 2或ZrO 2层。

7. 发明申请

US20130270103A1 Method Of Enabling And Controlling Ozone Concentration And Flow 审中-公开
标题翻译：启动和控制臭氧浓度和流量的方法
公开(公告)号：US20130270103A1
公开(公告)日：2013-10-17
申请号：US13339734
申请日：2012-04-17
申请人： ShouQian Shao , Vincent Li , Jason R. Wright
发明人： ShouQian Shao , Vincent Li , Jason R. Wright
IPC分类号： C01B13/11 , B01J7/00
CPC分类号： C01B13/11 , B01J4/008
摘要： Systems and methods to delivery various ozone concentration and various flow rates are disclosed. A low flow, low concentration ozone delivery apparatus comprises an ozone generator configured to deliver a predetermined high flow, low concentration ozone output, an orifice having a predetermined size coupled to the high flow, low concentration ozone output configured to remove a particular amount of the high flow, low concentration ozone, and a mass flow controller coupled to the ozone generator and the orifice, the mass flow controller configured to monitor and control the flow of ozone based on the particular amount bled from the high flow, low concentration ozone to provide a low flow, low concentration ozone.
摘要翻译：公开了递送各种臭氧浓度和各种流速的系统和方法。低流量低浓度臭氧输送装置包括臭氧发生器，其被配置为输送预定的高流量，低浓度臭氧输出，具有预定尺寸的孔口，该孔口与高流量，低浓度臭氧输出相结合，以便去除特定量的高流量，低浓度臭氧和耦合到臭氧发生器和孔口的质量流量控制器，质量流量控制器被配置为基于从高流量，低浓度臭氧引起的特定量来监测和控制臭氧流，以提供低流量，低浓度臭氧。

8. 发明授权

US07914603B2 Particle trap for a plasma source 失效
标题翻译：用于等离子体源的粒子阱
公开(公告)号：US07914603B2
公开(公告)日：2011-03-29
申请号：US12147078
申请日：2008-06-26
申请人： Ali Shajii , Xing Chen , Andrew Cowe , David Burtner , William Robert Entley , ShouQian Shao
发明人： Ali Shajii , Xing Chen , Andrew Cowe , David Burtner , William Robert Entley , ShouQian Shao
IPC分类号： B01D46/46
CPC分类号： H01J37/32357 , H01J37/32871 , Y10S55/15 , Y10T29/4935
摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.
摘要翻译：用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。冷却剂构件可以与气体通道热连通。

9. 发明授权

US08974649B2 Combinatorial RF bias method for PVD 有权
标题翻译： PVD的组合RF偏置方法
公开(公告)号：US08974649B2
公开(公告)日：2015-03-10
申请号：US13316882
申请日：2011-12-12
申请人： ShouQian Shao , Kent Riley Child , James Tsung , Hong Sheng Yang
发明人： ShouQian Shao , Kent Riley Child , James Tsung , Hong Sheng Yang
IPC分类号： C23C14/00 , C25B11/00 , C25B13/00
CPC分类号： C23C14/044 , C23C14/34 , C23C14/505 , H01J37/32651 , H01J37/34
摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.
摘要翻译：在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。屏蔽可以通过低通滤波器进一步连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。陶瓷插入件可用于选择孔径的尺寸。陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

10. 发明授权

US09175382B2 High metal ionization sputter gun 有权
标题翻译：高金属电离溅射枪
公开(公告)号：US09175382B2
公开(公告)日：2015-11-03
申请号：US13281316
申请日：2011-10-25
申请人： Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
发明人： Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
IPC分类号： C23C14/34 , H01J37/34 , C23C14/35
CPC分类号： C23C14/345 , C23C14/3485 , C23C14/352 , H01J37/3402 , H01J37/3405 , H01J37/3458 , H01J37/3467
摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.
摘要翻译：在本发明的一个方面，提供一种处理室。该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。多个溅射枪中的每一个耦合到第一电源。第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。脉冲电源的占空比小于30％。包括设置在距离多个溅射枪一定距离的衬底支撑件。衬底支撑件耦合到第二电源。第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。还包括执行沉积工艺的方法。

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