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    • 4. 发明授权
    • Showerhead for processing chamber
    • 处理室用喷头
    • US08733280B2
    • 2014-05-27
    • US12973845
    • 2010-12-20
    • Lipyeow YapJay DeDontneyShouqian ShaoJason Wright
    • Lipyeow YapJay DeDontneyShouqian ShaoJason Wright
    • C23C16/455C23C16/505H01L21/3065
    • C23C16/45565C23C16/4557C23C16/45572C23C16/45574C23C16/5096
    • A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension.
    • 提供了具有背板和毂的用于处理室的顶部组件。 背板具有第一部分和第二部分。 第一部分通过背板的中心区域连接到第二部分,其中在中心区域外部的第一和第二部分的相对表面之间限定间隙。 第一部分包括嵌入式加热元件。 轮毂在中心区域上固定在背板的第二部分的顶表面上。 毂具有顶表面,其具有限定在毂的中心区域内的多个通道开口,底面具有中心延伸部,多个通道限定在其中。 底表面包括与中心延伸部间隔开的环形延伸部。
    • 9. 发明授权
    • High productivity vapor processing system
    • 高效蒸汽处理系统
    • US08900364B2
    • 2014-12-02
    • US13306508
    • 2011-11-29
    • Jason Wright
    • Jason Wright
    • C23C16/455C23F1/00H01L21/306C23C16/06C23C16/22
    • C23C16/4412C23C16/45565
    • A processing chamber is provided. The processing chamber includes a lid having a plurality of valves affixed thereto, the plurality of valves operable to enable process gases to flow into the chamber. The chamber includes a bottom portion, where the bottom portion includes a base and side walls extending from the base. A surface of the base is configured to support a substrate. A showerhead is affixed to a bottom surface of the lid. A bottom surface of the showerhead is configured to include a central port for providing process gases into the chamber. The central port is surrounded by an annular pump channel. The annular pump channel is surrounded by an annular purge channel, where a first ridge separates the delivery region and the annular pump channel and a second ridge separates the annular pump channel and the annular purge channel.
    • 提供处理室。 处理室包括具有固定到其上的多个阀的盖,多个阀可操作以使处理气体能够流入室中。 该腔室包括底部,底部包括底座和从基座延伸的侧壁。 基底的表面构造成支撑基底。 淋浴头固定在盖的底面上。 喷头的底表面构造成包括用于将工艺气体提供到室中的中心端口。 中央港口环绕着一个环形的泵通道。 环形泵通道被环形吹扫通道包围,其中第一脊分开输送区域和环形泵通道,第二脊分隔环形泵通道和环形清洗通道。
    • 10. 发明申请
    • METHODS FOR IMPROVING WAFER TEMPERATURE UNIFORMITY
    • 改善温度均匀性的方法
    • US20130164948A1
    • 2013-06-27
    • US13335261
    • 2011-12-22
    • Martin RomeroJason Wright
    • Martin RomeroJason Wright
    • H01L21/26
    • C23C16/45565C23C16/46C23C16/52H01L21/67115
    • A method of improving temperature uniformity across a wafer or substrate is provided. The inventors have discovered that thermal radiation reflected from the showerhead injector affects the temperature uniformity across the wafer. Temperature uniformity across the wafer, particularly from the center to edge of the wafer, is improved by controlling the reflected energy from the showerhead. Control of the reflected energy from the showerhead is achieved by a variety of means, including changing the emissivity of the showerhead, creating different zones of emissivity of the showerhead, selectively heating the showerhead, varying the distance between the showerhead and the wafer, and increasing reflectivity of the showerhead in selected regions by employing an ring configured to emit thermal radiation to the showerhead which is then reflected back to the wafer.
    • 提供了一种改善晶片或衬底温度均匀性的方法。 发明人已经发现,从喷头喷射器反射的热辐射影响晶片上的温度均匀性。 通过控制来自喷头的反射能量来改善晶片上的温度均匀性,特别是从晶片的中心到边缘的温度均匀性。 通过各种手段来控制来自喷头的反射能量,包括改变喷头的发射率,产生喷头的不同发射率区域,选择性地加热喷头,改变喷头和晶片之间的距离,并增加 通过使用被配置为向喷头喷射热辐射的环,所述喷头在所选择的区域中的反射率,其然后被反射回到晶片。