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1. 发明授权

US5622769A Ceramic circuit board having a thermal conductivity substrate 失效
标题翻译：具有导热性基板的陶瓷电路基板
公开(公告)号：US5622769A
公开(公告)日：1997-04-22
申请号：US194495
申请日：1994-02-10
申请人： Shoji Kozuka , Masaru Hayashi , Katsuyoshi Oh-Ishi , Takaaki Yasumoto , Nobuo Iwase , Hiroshi Endo , Koji Yamakawa , Kaoru Koiwa , Kiyoshi Iyogi
发明人： Shoji Kozuka , Masaru Hayashi , Katsuyoshi Oh-Ishi , Takaaki Yasumoto , Nobuo Iwase , Hiroshi Endo , Koji Yamakawa , Kaoru Koiwa , Kiyoshi Iyogi
IPC分类号： H01L23/15 , H05K1/03 , H05K3/38 , B32B3/00
CPC分类号： H05K3/38 , H01L23/15 , H01L2924/0002 , H05K1/0306 , Y10S428/901 , Y10T428/24917
摘要： According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 .mu.m or less, and which has excellent humidity resistance and chemical resistance.
摘要翻译：根据本发明，公开了一种导热性基材，其包括氮化铝烧结体和形成在磷酸铝体上的表面粗糙度为1μm以下并且具有优异的耐湿性和化学性质的涂层抵抗性。

2. 发明授权

US5254816A Power circuit breaker and power resistor 失效
标题翻译：电源断路器和电源电阻
公开(公告)号：US5254816A
公开(公告)日：1993-10-19
申请号：US859868
申请日：1992-03-30
申请人： Naoki Shutoh , Motomasa Imai , Fumio Ueno , Hideyasu Andoh , Shoji Kozuka , Hiroshi Endo , Iwao Mitsuishi
发明人： Naoki Shutoh , Motomasa Imai , Fumio Ueno , Hideyasu Andoh , Shoji Kozuka , Hiroshi Endo , Iwao Mitsuishi
IPC分类号： H01C7/10 , H01C7/112 , H01H33/16
CPC分类号： H01H33/165 , H01C7/112
摘要： According to this invention, there is disclosed a compact power circuit breaker having a large breaking capacity and stable breaking performance due to a compact closing resistor unit having high performance. The power circuit breaker includes a main switching mechanism having an arc extinguishing function, an auxiliary switching mechanism parallelly connected to the main switching mechanism and having an arc extinguishing function, and a closing resistor unit connected in series with the auxiliary switching mechanism and incorporated with a resistor containing zinc oxide (ZnO) as a main component and titanium figured out as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol% and nickel figured out as nickel oxide (NiO) in an amount of 0.5 to 30 mol. % as sub-components.

3. 发明授权

US4414124A Method of producing barium-ferrite series powder 失效
标题翻译：生产钡铁氧体系粉末的方法
公开(公告)号：US4414124A
公开(公告)日：1983-11-08
申请号：US250555
申请日：1981-04-03
申请人： Hiroshi Endo , Masashi Awa , Shigeo Iiri , Toshihiko Oguchi , Isao Suzuki , Naoyuki Hirate , Masaru Hayashi
发明人： Hiroshi Endo , Masashi Awa , Shigeo Iiri , Toshihiko Oguchi , Isao Suzuki , Naoyuki Hirate , Masaru Hayashi
IPC分类号： C01G49/00 , C01G51/00 , C01G53/00 , C04B35/26 , H01F1/11
CPC分类号： H01F1/11 , C01G49/0036 , C01G49/0063 , C01G49/0072 , C01G49/009 , C01G51/006 , C01G53/006 , C04B35/2683 , C01P2002/52 , C01P2004/03 , C01P2004/22 , C01P2004/51 , C01P2004/54 , C01P2004/62 , C01P2006/42
摘要： Barium-ferrite series powders are prepared from an alkaline aqueous solution containing a prescribed ratio of ions of the metals equal to those contained in the powder. In the first stage, the alkaline aqueous solution is heated at a constant volume at 150.degree. to 300.degree. C. to precipitate a precursor of the barium-ferrite series powder. Then, the precursor is baked at 700.degree. to 1,000.degree. C. to crystallize the precursor.
摘要翻译：钡 - 铁素体系粉末由含有规定比例的金属离子的碱性水溶液制备成等于粉末中所含的金属。在第一阶段中，将碱性水溶液在150〜300℃恒定体积加热，析出钡铁氧体系粉末的前体。然后，将前体在700℃至1000℃下烘烤以使前体结晶。

4. 发明授权

US4762695A Methods for preparing high-purity molybdenum or tungsten powder and high-purity oxides powder of the same 失效
标题翻译：制备高纯度钼或钨粉及其高纯氧化物粉末的方法
公开(公告)号：US4762695A
公开(公告)日：1988-08-09
申请号：US94074
申请日：1987-09-04
申请人： Hiroshi Endo , Shigeo Iiri , Masaru Hayashi , Tsutomu Yamashita , Satoshi Yamaguchi , Motoo Seimiya
发明人： Hiroshi Endo , Shigeo Iiri , Masaru Hayashi , Tsutomu Yamashita , Satoshi Yamaguchi , Motoo Seimiya
IPC分类号： B22F9/22 , C01G39/00 , C01G41/00 , C22B34/34 , C22B34/36 , C01G39/02 , C01G41/02
CPC分类号： C22B34/36 , B22F9/22 , C01G39/003 , C01G41/003 , C22B3/42 , C22B34/34 , Y02P10/234 , Y10S423/14
摘要： High-purity molybdenum or tungsten powder can be produced by a process comprising (a) decomposing a powder or an oxide powder of molybdenum or tungsten with hydrogen peroxide water; (b) bringing the resulting aqueous solution of molybdenum or tungsten into contact with a cation exchange resin; (c) concentrating the aqueous solution; and (d) reducing a concentrated solid material. By omitting reducing step (d), one can obtain high-purity molybdenum or tungsten oxide powders. Because the Mo and W powders and MoO.sub.3 and WO.sub.3 powders prepared by this invention are of an extremely high purity, they are useful as materials for targets of VLSI elements.
摘要翻译：可以通过以下方法制备高纯度的钼或钨粉末：（a）用过氧化氢水分解钼或钨的粉末或氧化物粉末; （b）使所得到的钼或钨水溶液与阳离子交换树脂接触; （c）浓缩水溶液; 和（d）还原浓缩的固体物质。通过省略步骤（d），可以获得高纯度的钼或氧化钨粉末。由于通过本发明制备的Mo和W粉末和MoO 3和WO 3粉末具有非常高的纯度，因此它们可用作VLSI元素靶的材料。

5. 发明授权

US4847221A AlN sintered body having high thermal conductivity and a method of fabricating the same 失效
标题翻译：具有高导热性的AlN烧结体及其制造方法
公开(公告)号：US4847221A
公开(公告)日：1989-07-11
申请号：US142818
申请日：1988-01-11
申请人： Akihiro Horiguchi , Fumio Ueno , Mitsuo Kasori , Yoshiko Sato , Masaru Hayashi , Hiroshi Endo , Kazuo Shinozaki , Akihiko Tsuge
发明人： Akihiro Horiguchi , Fumio Ueno , Mitsuo Kasori , Yoshiko Sato , Masaru Hayashi , Hiroshi Endo , Kazuo Shinozaki , Akihiko Tsuge
IPC分类号： C04B35/581
CPC分类号： C04B35/581
摘要： According to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 .mu.m and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.01 to 20 wt % of oxygen and (rare earth element)--Al--O compounds phases and/or (rare earth element)--O compounds phases, is fired in a reducing atmosphere at a temperature of 1,550 to 2,050.degree. C. for 4 hours or more.
摘要翻译：根据本发明，提供了一种具有高导热性且基本上由含有0.01至8,000ppm的稀土元素和小于2,000ppm的氧的AlN单相组成的氮化铝烧结体。根据本发明，提供一种制造具有高导热性且基本由AlN单相组成的氮化铝烧结体的方法，该AlN单相含有0.01至8,000ppm的稀土元素和小于2,000ppm的氧，其中通过将少于7重量％的氧和平均粒径为0.05〜5μm的氮化铝粉末和基于稀土元素含量为0.01〜15重量％的稀土类化合物混合成型而制备的成型体，或含有0.01〜15重量％的稀土元素和0.01〜20重量％的氧和（稀土元素）-Al-O化合物相和/或（稀土元素）-Oi的氧化物晶界相的烧结AlN体化合物相在1550〜2050℃的温度下在还原气氛中烧成4小时以上。

6. 发明授权

US4540971A Metal oxide varistor made by a co-precipation process and freeze-dried 失效
标题翻译：金属氧化物变阻器通过共沉淀法制成并冷冻干燥
公开(公告)号：US4540971A
公开(公告)日：1985-09-10
申请号：US506768
申请日：1983-06-22
申请人： Hideyuki Kanai , Takashi Takahashi , Motomasa Imai , Osamu Furukawa , Hiroshi Endo , Osamu Hirao , Masaru Hayashi
发明人： Hideyuki Kanai , Takashi Takahashi , Motomasa Imai , Osamu Furukawa , Hiroshi Endo , Osamu Hirao , Masaru Hayashi
IPC分类号： H01C7/10 , H01C7/112 , H01B1/08
CPC分类号： H01C7/112 , Y10T29/49082
摘要： A metal oxide varistor is disclosed which a component of grain bodies comprised of zinc oxide and a component of grain boundary layers comprised of another metallic oxide, containing metal other than zinc wherein at least a portion of these starting materials comprised a fine particle powder prepared by a co-precipitatin method.The metal oxide varistor of the present invention is excellent in varistor characteristics such as non-linearity to voltage, life performances and capability of energy dissipation, is small in a scatter of the above characteristics between manufacture lots or within each lot at the time of manufacture, and has a good quality stability. Unexpected results are obtained when the co-precipitated fine particles are subjected to a refrigeration-dehydration type process.
摘要翻译：公开了一种金属氧化物变阻器，其中由氧化锌组成的晶粒组成部分和由除了锌之外的金属的另一种金属氧化物组成的晶界层的组分，其中这些起始材料的至少一部分包含由共沉淀法。本发明的金属氧化物变阻器具有优异的非线性电压，寿命性能和能量耗散等非线性电阻特性，在制造批次之间或在制造时间内的各批次内的上述特性的散射小，质量稳定。当共沉淀的微粒进行冷冻 - 脱水型处理时，获得了意想不到的结果。

7. 发明申请

US20120056191A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS 审中-公开
标题翻译：半导体器件及其制造方法和电源装置
公开(公告)号：US20120056191A1
公开(公告)日：2012-03-08
申请号：US13152426
申请日：2011-06-03
申请人： Hiroshi Endo , Tadahiro Imada , Kenji Imanishi , Toshihide Kikkawa
发明人： Hiroshi Endo , Tadahiro Imada , Kenji Imanishi , Toshihide Kikkawa
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/7787 , H01L21/30612 , H01L21/30621 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/518 , H01L29/66462
摘要： A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron supply layer; a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer; and a gate electrode provided over the gate recess.
摘要翻译：半导体器件包括设置在衬底上的GaN电子传输层; 设置在所述GaN电子传输层上的第一AlGaN电子供给层; 设置在所述第一AlGaN电子供给层上的AlN电子供给层; 设置在AlN电子供给层上的第二AlGaN电子供给层; 设置在所述第二AlGaN电子供给层和所述AlN电子供给层中的栅极凹部; 以及设置在栅极凹部上方的栅电极。

8. 发明授权

US08035692B2 Image taking apparatus which forms an image of a subject on an imaging device to create image data representative of the subject 有权
标题翻译：图像摄取装置，其在成像装置上形成被摄体的图像，以创建表示被摄体的图像数据
公开(公告)号：US08035692B2
公开(公告)日：2011-10-11
申请号：US12045921
申请日：2008-03-11
申请人： Hiroshi Endo
发明人： Hiroshi Endo
IPC分类号： H04N5/228
CPC分类号： G03B7/097 , G03B2207/005 , G03B2217/005 , H04N5/23245 , H04N5/23248 , H04N5/2327 , H04N5/23277
摘要： There is provided an image taking apparatus capable of preferably correcting both the camera shake and the subject shake in the still picture photography. The image taking apparatus has a system control section that determines whether a subject is a still subject or a dynamic subject. When the system control section determines that the subject is the still subject, the system control section instructs a timing generation section to cause an imaging section to generate a series of images, so that an image piling up section performs piling up of images in accordance with a computed result with a movement vector computing section. Thus, the camera shake is corrected. When the system control section determines that the subject is the dynamic subject, the system control section instructs the timing generation section to perform a single photography at a predetermined shutter time free from the subject shake.
摘要翻译：提供了一种能够在静态图像拍摄中优化校正相机抖动和被摄体抖动的图像拍摄装置。图像摄取装置具有确定被摄体是静止被摄体还是动态被摄体的系统控制部。当系统控制部分确定主体是静止对象时，系统控制部分指示定时生成部分使得成像部分生成一系列图像，使得图像打桩部分根据图像进行堆叠运动矢量计算部分的计算结果。因此，校正相机抖动。当系统控制部分确定被摄体是动态对象时，系统控制部分指示定时生成部分在没有被摄体抖动的预定快门时间进行单次拍摄。

9. 发明申请

US20110153896A1 SEMICONDUCTOR MEMORY CARD, METHOD FOR CONTROLLING THE SAME, AND SEMICONDUCTOR MEMORY SYSTEM 审中-公开
标题翻译：半导体存储卡，其控制方法和半导体存储器系统
公开(公告)号：US20110153896A1
公开(公告)日：2011-06-23
申请号：US13039854
申请日：2011-03-03
申请人： Yoshihito Sugiyama , Tatsuya Kaise , Hiroshi Endo , Hiroko Okabayashi , Masahiko Murohashi
发明人： Yoshihito Sugiyama , Tatsuya Kaise , Hiroshi Endo , Hiroko Okabayashi , Masahiko Murohashi
IPC分类号： G06F13/14
CPC分类号： G06F11/1004 , G06F11/1044 , G06F12/0246 , G06F13/385 , G06F13/4018 , G06F13/4234 , G06F2212/7201
摘要： A semiconductor memory card which can be attached to a host apparatus and can be removed from the host apparatus includes a plurality of data transfer terminals, and an internal circuit transmitting a first signal to at least one first data transfer terminal comprising at least one of the data transfer terminals and transmitting a second signal to at least one second data transfer terminal comprising at least one of the data transfer terminals different from the first data transfer terminals. The second signal is generated by executing a logical operation on the first signal.
摘要翻译：可以附接到主机设备并且可以从主机设备移除的半导体存储卡包括多个数据传输终端，以及向第一数据传输终端发送第一信号的内部电路，所述至少一个第一数据传输终端包括至少一个数据传输终端，并将第二信号发送到至少一个第二数据传输终端，该至少一个第二数据传输终端包括与第一数据传输终端不同的数据传输终端中的至少一个。通过对第一信号执行逻辑运算来产生第二信号。

10. 发明申请

US20110100812A1 ELECTRODE MODULE 失效
标题翻译：电极模块
公开(公告)号：US20110100812A1
公开(公告)日：2011-05-05
申请号：US12988285
申请日：2009-04-02
申请人： Shigeori Takenaka , Yoshiaki Hano , Minoru Yamada , Kimio Morimoto , Hiroshi Endo , Hiroshi Yasutake , Shinobu Sato , Keiichi Otsuka
发明人： Shigeori Takenaka , Yoshiaki Hano , Minoru Yamada , Kimio Morimoto , Hiroshi Endo , Hiroshi Yasutake , Shinobu Sato , Keiichi Otsuka
IPC分类号： G01N27/30
CPC分类号： G01N27/403
摘要： An electrode module includes a working electrode, a counter electrode, a reference electrode and a well (container) for retaining an electrolytic solution and is used in electrochemical measuring instruments. This electrode module is produced by integrating the well with at least one of the working electrode, the counter electrode and the reference electrode. This integrated electrode includes a chip-like electrode having a thin membrane of an electrode material formed on the surface of a chip-like base metal. This chip-like electrode is disposed on and integrated with the bottom of the well in a detachable manner. There is provided the compact, low price electrode module of high repetition use efficiency with no need of maintenance and having easy handling.
摘要翻译：电极模块包括用于保持电解液的工作电极，对电极，参比电极和阱（容器），并用于电化学测量仪器中。该电极模块通过将阱与工作电极，对电极和参考电极中的至少一个集成来制造。该集成电极包括具有形成在芯片状母材表面上的电极材料的薄膜的芯片状电极。这种芯片状电极以可拆卸的方式设置在阱的底部并与其一体化。提供了高重复使用效率的紧凑，价格低廉的电极模块，无需维护和易于处理。

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