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1. 发明授权

US06534380B1 Semiconductor substrate and method of manufacturing the same 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06534380B1
公开(公告)日：2003-03-18
申请号：US09116956
申请日：1998-07-17
申请人： Shoichi Yamauchi , Hisayoshi Ohshima , Masaki Matsui , Kunihiro Onoda , Tadao Ooka , Akitoshi Yamanaka , Toshifumi Izumi
发明人： Shoichi Yamauchi , Hisayoshi Ohshima , Masaki Matsui , Kunihiro Onoda , Tadao Ooka , Akitoshi Yamanaka , Toshifumi Izumi
IPC分类号： H01L2130
CPC分类号： H01L21/76254 , Y10S438/96
摘要： Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatness of the contamination protective film is degraded during the ion implanting step or even when contaminants remain in a segregated state in the vicinity of the surface of the contamination protective film, the state of the bonding between the semiconductor substrate and the base substrate after the bonding step can be made uniform over the entire area of the bonding. As a result, a high-quality semiconductor substrate can be manufactured at low cost.
摘要翻译：在半导体基板和基底基板彼此直接接合之前，在保护膜去除步骤中，去除了在离子注入步骤期间形成在半导体衬底上以防止其污染的污染保护膜。因此，即使当在离子注入步骤期间污染保护膜的平坦度劣化时，或者甚至当污染保护膜表面附近的污染物保持分离状态时，半导体衬底和基底之间的接合状态接合步骤之后的基板可以在结合的整个区域上均匀。结果，可以以低成本制造高质量的半导体衬底。

2. 发明授权

US06191007B1 Method for manufacturing a semiconductor substrate 失效
标题翻译：半导体基板的制造方法
公开(公告)号：US06191007B1
公开(公告)日：2001-02-20
申请号：US09066971
申请日：1998-04-28
申请人： Masaki Matsui , Shoichi Yamauchi , Hisayoshi Ohshima , Kunihiro Onoda , Akiyoshi Asai , Takanari Sasaya , Takeshi Enya , Jun Sakakibara
发明人： Masaki Matsui , Shoichi Yamauchi , Hisayoshi Ohshima , Kunihiro Onoda , Akiyoshi Asai , Takanari Sasaya , Takeshi Enya , Jun Sakakibara
IPC分类号： H01L21331
CPC分类号： H01L21/84 , H01L21/02667 , H01L21/2022 , H01L21/76243 , H01L21/76254 , H01L21/76264 , H01L21/76267 , H01L21/76275 , H01L21/76281 , H01L21/76283 , H01L2221/68363
摘要： Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.
摘要翻译：制造半导体衬底的方法，其中半导体器件用于形成半导体器件的半导体层形成在支撑衬底上，绝缘膜介于其之间，在形成掩埋图案结构的衬底上形成半导体层是可能的大大增加了半导体层的膜厚均匀性和膜厚可控性，特别是当半导体层被形成为极薄膜时。结果，可以实现半导体衬底的改进的质量和特性，并且可以将这种半导体衬底部署到各种用途上。

3. 发明授权

US06251754B1 Semiconductor substrate manufacturing method 失效
标题翻译：半导体衬底制造方法
公开(公告)号：US06251754B1
公开(公告)日：2001-06-26
申请号：US09074384
申请日：1998-05-08
申请人： Hisayoshi Ohshima , Masaki Matsui , Kunihiro Onoda , Shoichi Yamauchi
发明人： Hisayoshi Ohshima , Masaki Matsui , Kunihiro Onoda , Shoichi Yamauchi
IPC分类号： H01L2120
CPC分类号： H01L21/76254
摘要： The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply while reducing impurity contamination of the semiconductor layer to a minimum. One of these methods includes a defective layer forming step of carrying out ion implantation to a predetermined depth from the surface of a base substrate to partition off a monocrystalline thin film layer at the surface of the base substrate by a defective layer formed by implanted ions, a semiconductor film forming step of forming a monocrystalline semiconductor film of a predetermined thickness on the monocrystalline thin film layer, a laminating step of laminating the base substrate by the surface of the monocrystalline semiconductor film to the supporting substrate, and a detaching step of detaching the base substrate laminated to the supporting substrate at the defective layer.
摘要翻译：本发明提供了许多半导体衬底制造方法，在制造具有在支撑衬底上具有绝缘状态的半导体层的半导体衬底的情况下，可以以简单的工艺获得厚半导体层并且在降低杂质污染的同时廉价的半导体层。这些方法之一包括从基底表面进行离子注入到预定深度的缺陷层形成步骤，以通过由注入离子形成的缺陷层在基底基板的表面分隔单晶薄膜层，在单晶薄膜层上形成预定厚度的单晶半导体膜的半导体膜形成步骤，通过单晶半导体膜的表面将基底基板层压到支撑基板上的层压步骤，以及将基板基底基板层叠到不良层的支撑基板。

4. 发明授权

US6060344A Method for producing a semiconductor substrate 有权
标题翻译：半导体基板的制造方法
公开(公告)号：US6060344A
公开(公告)日：2000-05-09
申请号：US136294
申请日：1998-08-19
申请人： Masaki Matsui , Masatake Nagaya , Hisayoshi Ohshima
发明人： Masaki Matsui , Masatake Nagaya , Hisayoshi Ohshima
IPC分类号： H01L21/02 , H01L21/76 , H01L21/762 , H01L27/12 , H02L21/20
CPC分类号： H01L21/76264 , H01L21/76297 , H01L21/76275 , H01L21/76286
摘要： In a method for producing a semiconductor substrate completed through a bonding process for joining a semiconductor wafer to a support substrate by performing heat treatment thereto in a state in which the semiconductor wafer is closely joined to the support substrate, the method according to the present invention includes the following steps, i.e., a depositing process for depositing a poly-crystal semiconductor which covers all areas of a surface to be bonded on the surface of the semiconductor wafer; a heat treatment process for performing the heat treatment to the semiconductor wafer provided after the depositing process, during a predetermined time under a temperature equal to or higher than the heat treatment temperature at the bonding process; and a polishing process for flattening the surface of the poly-crystal semiconductor provided after the heat treatment process. After the above processes were performed in order, the bonding process is performed after the polishing process.
摘要翻译：在半导体基板的制造方法中，通过在将半导体晶片紧密接合到支撑基板的状态下对半导体晶片与支撑基板进行热处理的接合工序而完成，本发明的方法包括以下步骤，即，用于沉积覆盖半导体晶片表面上要接合的表面的所有区域的多晶半导体的沉积工艺; 在接合工序的等于或高于所述热处理温度的温度下的预定时间内对所述沉积工艺之后提供的所述半导体晶片进行热处理的热处理工艺; 以及用于使在热处理工艺之后提供的多晶半导体的表面变平的抛光工艺。在进行上述处理之后，在抛光处理之后进行接合处理。

5. 发明授权

US08877383B2 Magnesium-based battery 有权
标题翻译：镁基电池
公开(公告)号：US08877383B2
公开(公告)日：2014-11-04
申请号：US12819325
申请日：2010-06-21
申请人： Masaki Matsui
发明人： Masaki Matsui
IPC分类号： H01M4/48 , H01M4/46 , H01M10/054
CPC分类号： H01M4/48 , H01M4/466 , H01M10/054 , Y02E60/12
摘要： An electrochemical device, such as a magnesium-ion battery, comprises a first electrode including a first active material, a second electrode, and an electrolyte located between the first electrode and the second electrode. The electrolyte may include a magnesium compound, such as a magnesium salt. In representative examples, an improved active material includes a group 15 chalcogenide, in particular a bismuth chalcogenide, such as bismuth oxide or other chalcogenide. In various examples, the improved active material may be used in a positive or negative electrode of an example battery.
摘要翻译：诸如镁离子电池的电化学装置包括第一电极，其包括位于第一电极和第二电极之间的第一活性材料，第二电极和电解质。电解质可以包括镁化合物，例如镁盐。在代表性实例中，改进的活性材料包括15族硫族化物，特别是硫族铋，如氧化铋或其它硫族化物。在各种实施例中，改进的活性材料可用于示例性电池的正极或负极。

6. 发明授权

US07541492B2 Perfluoroalkanesulfonamide compounds 有权
标题翻译：全氟烷基磺酰胺化合物
公开(公告)号：US07541492B2
公开(公告)日：2009-06-02
申请号：US11258214
申请日：2005-10-26
申请人： Teruo Umemoto , Masaki Matsui
发明人： Teruo Umemoto , Masaki Matsui
IPC分类号： C07C303/00
CPC分类号： C07C303/40 , H01G9/035 , H01G9/038 , H01G11/58 , H01G11/62 , Y02E60/13 , C07C311/03 , C07C311/48 , C07C311/51
摘要： The present invention provides compounds represented by the formula Y+−N(SO2Rf)(CF3). Such a compound can be manufactured through a reaction between M+−N(SO2Rf)(CF3) and Y+−B. The present invention also provides compounds represented by the formula Y+−N(SO2Rf)(CN). Such a compound can be manufactured through a reaction between M+−N(SO2Rf)(CN) and Y+−B. Rf in the above formulae is a perfluoroalkyl group. Y+ is an organic or inorganic cation. −B is an organic or inorganic anion. M+ is an alkali metal cation or a silver cation.
摘要翻译：本发明提供由式Y + -N（SO2Rf）（CF3）表示的化合物。这种化合物可以通过M + -N（SO 2 R f）（CF 3）和Y + -B之间的反应来制备。本发明还提供由式Y + -N（SO2Rf）（CN）表示的化合物。这种化合物可以通过M + -N（SO 2 R f）（CN）和Y + -B之间的反应来制备。上式中的Rf是全氟烷基。 Y +是有机或无机阳离子。 -B是有机或无机阴离子。 M +是碱金属阳离子或银阳离子。

7. 发明申请

US20060024582A1 Battery and method of manufacturing the same 有权
标题翻译：电池及其制造方法
公开(公告)号：US20060024582A1
公开(公告)日：2006-02-02
申请号：US11080617
申请日：2005-03-15
申请人： Wen Li , Yutaka Oyama , Masaki Matsui
发明人： Wen Li , Yutaka Oyama , Masaki Matsui
IPC分类号： H01M4/62 , H01M2/16
CPC分类号： H01M4/66 , H01M4/131 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/661 , H01M4/663 , H01M4/664 , H01M4/667 , H01M10/0525 , H01M10/0563 , H01M2300/0022 , Y10T29/49108
摘要： There is provided a battery containing an electrolyte, according to which oxidative decomposition of the electrolyte is suppressed. The battery contains a positive electrode having an active material and an electron conducting material. The electron conducting material has a barrier layer at least on the surface thereof. This barrier layer is substantially constituted from at least one material selected from (a) oxides of elements in group 2 to 14 and the third or subsequent period of the periodic table, (b) carbides of elements in group 2 to 14 and the third or subsequent period of the periodic table, (c) nitrides of elements in group 2 to 14 and the third or subsequent period of the periodic table, and (d) tungsten.
摘要翻译：提供含有电解质的电池，根据该电解液抑制电解质的氧化分解。该电池包含具有活性材料和电子传导材料的正电极。电子传导材料至少在其表面上具有阻挡层。该阻挡层基本上由选自（a）第2至14族元素的氧化物和周期表的第3或其后的周期中的至少一种材料构成，（b）组2至14中的元素的碳化物和第3或元素周期表的后续周期，（c）元素周期表第2〜14个元素和第3个或其后的元素的氮化物，（d）钨。

8. 发明授权

US08673493B2 Indium-tin binary anodes for rechargeable magnesium-ion batteries 有权
标题翻译：用于可充电镁离子电池的铟锡二元阳极
公开(公告)号：US08673493B2
公开(公告)日：2014-03-18
申请号：US13482643
申请日：2012-05-29
申请人： Nikhilendra Singh , Masaki Matsui
发明人： Nikhilendra Singh , Masaki Matsui
IPC分类号： H01M4/38 , H01M10/40
CPC分类号： H01M10/0568 , H01M4/134 , H01M4/38 , H01M4/387 , H01M10/054
摘要： A rechargeable magnesium-ion battery includes a first electrode, a second electrode, and an electrolyte layer between the first electrode and the second electrode. The electrolyte includes a source of magnesium ions, such as a magnesium salt. The first electrode includes an active material, the active material including indium and tin, for example as a solid solution or intermetallic compound of indium and tin.
摘要翻译：可充电镁离子电池包括在第一电极和第二电极之间的第一电极，第二电极和电解质层。电解质包括镁离子源，例如镁盐。第一电极包括活性材料，活性材料包括铟和锡，例如铟或锡的固溶体或金属间化合物。

9. 发明授权

US08585044B2 Sheet processing device and image forming apparatus 有权
标题翻译：片材处理装置和成像装置
公开(公告)号：US08585044B2
公开(公告)日：2013-11-19
申请号：US13565989
申请日：2012-08-03
申请人： Masaki Matsui
发明人： Masaki Matsui
IPC分类号： B65H43/00 , B65H31/00
CPC分类号： B65H31/02 , B65H31/3027 , B65H31/3072 , B65H2301/4213 , B65H2301/42146 , B65H2301/4475 , B65H2301/4478 , B65H2405/22 , B65H2511/10 , B65H2511/30 , B65H2513/10 , B65H2515/10 , B65H2515/112 , B65H2701/182 , B65H2801/27 , G03G15/6552 , G03G15/6573 , B65H2220/03 , B65H2220/02 , B65H2220/11 , B65H2220/01
摘要： A sheet processing device includes: a first reservoir unit which reserves sheets; a sheet processing unit which implements predetermined processing for the sheets reserved in the first reservoir unit; a discharge unit which includes a stepping motor, and discharges the sheets from the first reservoir unit, the sheets being subjected to the predetermined processing by the sheet processing unit; an obtaining unit which obtains a value regarding weight of the sheets subjected to the predetermined processing; and a control unit which controls the discharge unit to lower a rotation speed of the stepping motor in a case where the value obtained by the obtaining unit is more than a predetermined value in comparison with a case where the value is less than the predetermined value.
摘要翻译：片材处理装置包括：第一储存单元，其储存纸张; 对在第一储存单元中预定的纸张进行预定处理的纸张处理单元; 排出单元，其包括步进电机，并且从所述第一储存单元排出所述纸张，所述纸张经过所述纸张处理单元进行预定处理; 获取单元，其获得经过预定处理的纸张的重量的值; 以及控制单元，其在与所述值小于所述预定值的情况相比较时，在所述获得单元获得的值大于预定值的情况下，控制所述排出单元降低所述步进电动机的转速。

10. 发明申请

US20130029227A1 POLYANION ACTIVE MATERIALS AND METHOD OF FORMING THE SAME 审中-公开
标题翻译： POLYANION活性材料及其形成方法
公开(公告)号：US20130029227A1
公开(公告)日：2013-01-31
申请号：US13191028
申请日：2011-07-26
申请人： Wei Song , Masaki Matsui , Toshihiko Tani
发明人： Wei Song , Masaki Matsui , Toshihiko Tani
IPC分类号： H01M4/02 , H01M4/04
CPC分类号： C01B33/22 , H01M4/366 , H01M4/5825 , H01M10/0525 , H01M10/054
摘要： A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material. Also disclosed is a polyanion active material that includes the in situ reaction product of a carbon source, mobile ion source, active metal material, network material, and a flux material wherein the polyanion active material includes a carbon coating formed thereon.
摘要翻译：一种形成聚阴离子活性材料的方法，其包括提供碳源，提供可移动离子源，提供活性金属材料，提供网状材料，提供助焊剂材料和混合各种材料。在一个方面，混合步骤可以包括将材料研磨或粉碎成均匀的细混合物。在一个方面，可以使用球磨机来混合组分。在混合材料之后，将混合物在非氧化性气氛中加热至预定温度以形成反应产物。在一个方面，将混合物加热至高于助熔剂材料的熔融温度的温度。以这种方式，助焊剂材料提供了各种反应物可以反应形成所需反应产物的介质。在混合物加热之后，将反应产物洗涤，形成碳涂覆的聚阴离子活性材料。还公开了一种聚阴离子活性材料，其包括碳源，可移动离子源，活性金属材料，网络材料和助焊剂材料的原位反应产物，其中聚阴离子活性材料包括其上形成的碳涂层。

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