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1. 发明授权

US5318761A Process for preparing silicon carbide powder for use in semiconductor equipment 失效
标题翻译：制备用于半导体设备的碳化硅粉末的方法
公开(公告)号：US5318761A
公开(公告)日：1994-06-07
申请号：US913951
申请日：1992-07-17
申请人： Shoichi Kojima , Kazuhiro Minagawa , Tasuku Saito , Tasuo Kurachi , Haruyuki Kano
发明人： Shoichi Kojima , Kazuhiro Minagawa , Tasuku Saito , Tasuo Kurachi , Haruyuki Kano
IPC分类号： C01B31/36 , C04B35/565 , H01L21/67 , C04B35/54
CPC分类号： C01B31/36 , C01P2004/61 , C01P2004/62 , C01P2006/80
摘要： A process for the preparation of a beta-silicon carbide powder of high purity which is suitable for use in the manufacture of semiconductor equipment and which has a content of 1 ppm or less of each atom harmful to the manufacture of semiconductor devices. The process comprises preparing a carbon- and silicon-containing starting mixture comprising (a) at least one siliceous material selected from liquid silicon compounds and solid siliceous substances derived from a hydrolyzable silicon compound, and (b) at least one carbonaceous material selected from polymerizable or cross-linkable organic compounds prepared in the presence of a catalyst which is substantially free from atoms harmful to the manufacture of semiconductor devices. The starting mixture comprises at least one liquid substance used as component (a) or (b). The starting mixture is then solidified by heating and/or by use of a catalyst or a curing agent. The resulting solid body is optionally heat treated in a non-oxidizing atmosphere at a temperature in the range of from 500.degree. C. to 1300.degree. C. for a period sufficient to remove volatiles. The cured and optionally heat-treated body is calcined in a non-oxidizing atmosphere under conditions sufficient to give beta-silicon carbide powder.
摘要翻译：一种制备高纯度的β-碳化硅粉末的方法，其适用于制造半导体设备，并且其含量为每个对半导体器件的制造有害的原子的1ppm以下。该方法包括制备含碳和含硅的起始混合物，其包含（a）至少一种选自液体硅化合物的硅质材料和源自可水解硅化合物的固体硅质物质，和（b）至少一种选自可聚合的或可在不存在对半导体器件制造有害的原子的催化剂存在下制备的可交联的有机化合物。起始混合物包含至少一种用作组分（a）或（b）的液体物质。然后将起始混合物通过加热和/或通过使用催化剂或固化剂固化。所得固体任选在非氧化性气氛中在500℃至1300℃的温度范围内热处理足以除去挥发物的时间。固化和任选的热处理体在足以产生β-碳化硅粉末的条件下在非氧化性气氛中煅烧。

2. 发明授权

US5589116A Process for preparing a silicon carbide sintered body for use in semiconductor equipment 失效
标题翻译：制备用于半导体设备的碳化硅烧结体的方法
公开(公告)号：US5589116A
公开(公告)日：1996-12-31
申请号：US181945
申请日：1994-01-18
申请人： Shoichi Kojima , Kazuhiro Minagawa , Haruyuki Kano , Tadaaki Miyazaki , Hiroaki Wada
发明人： Shoichi Kojima , Kazuhiro Minagawa , Haruyuki Kano , Tadaaki Miyazaki , Hiroaki Wada
IPC分类号： C01B31/36 , C04B35/54 , C04B35/56
CPC分类号： C01B31/36 , C01P2004/61 , C01P2004/62 , C01P2006/80
摘要： A process for the preparation of a silicon carbide sintered body of high purity which has a content of 1 ppm or less of each atom harmful to the manufacture of semiconductor equipment including the step of shaping a silicon carbide powder, calcining the shaped body in a non-oxidizing atmosphere to form a porous body, and subjecting the porous body to reaction sintering while being impregnated with molten metallic silicon. The starting silicon carbide powder also has a content of 1 ppm or less of each harmful atom and it has a free carbon content of not greater than 20% by weight and an average particle diameter of 0.5-20 .mu.m. Such silicon carbide powder can be prepared from a carbon- and silicon-containing starting mixture including at least one liquid hydrolyzable silicon compound and at least one carbonaceous material selected from polymerizable or cross-linkable organic compounds prepared in the presence of a catalyst which is substantially free from harmful atoms by solidifying the starting mixture and heating it so as to react and form silicon carbide.
摘要翻译：一种用于制备高纯度碳化硅烧结体的方法，其含有对于制造半导体设备有害的每个原子的1ppm以下，包括成形碳化硅粉末的步骤，氧化气氛以形成多孔体，并且在浸渍熔融金属硅的同时使多孔体进行反应烧结。起始碳化硅粉末的每个有害原子的含量为1ppm以下，游离碳含量为20重量％以下，平均粒径为0.5〜20μm。这种碳化硅粉末可以由含碳和含硅的起始混合物制备，所述起始混合物包括至少一种液体可水解的硅化合物和至少一种选自在催化剂存在下制备的可聚合或可交联的有机化合物的碳质材料，通过使起始混合物固化并加热以便反应并形成碳化硅，从而避免了有害原子。

3. 发明申请

US20050174664A1 Dielectric multi layer thin film optical filter having predetermined wavelength optical characteristics, a method of manufacturing the same, a program for designing the same, and an optical add-drop system using the dielectric multi layer thin film optical filter 审中-公开
标题翻译：具有预定波长光学特性的介质多层薄膜滤光器，其制造方法，用于设计该光学特性的程序，以及使用介电多层薄膜滤光器的光学分插系统
公开(公告)号：US20050174664A1
公开(公告)日：2005-08-11
申请号：US10969956
申请日：2004-10-22
申请人： Takahiro Ito , Kazuhiro Minagawa
发明人： Takahiro Ito , Kazuhiro Minagawa
IPC分类号： G02B1/11 , G02B5/08 , G02B5/28 , G02B6/293 , G02B7/182 , G02B27/00
CPC分类号： G02B5/281 , G02B27/0012
摘要： A dielectric multi layer thin film type band-pass filter provided with the function of transmitting a predetermined wavelength band, the function of reflecting a predetermined wavelength band or both functions, where a film structure of the dielectric multi layer thin film optical filter is configured of, with respect to the center wavelength λ as a reference of the optical film thickness, (1) mirror layers each comprised of alternately layered layers (H) of high refractive index material and layers (L) of low refractive index material each with an optical film thickness of λ/4, and (2) spacer layers each of which is configured in a combination of a layer (nH: n is an integer) of high refractive index material and a layer (nL: n is an integer) of low refractive index material each with an optical film thickness of λ/4 and has a total optical film thickness of an integral multiple of λ/2.
摘要翻译：一种介质多层薄膜型带通滤波器，其具有发送预定波长带的功能，反射预定波长带的功能或两者功能，其中介电多层薄膜滤光器的膜结构由相对于作为光学膜厚度的参照的中心波长λ1，（1）由高折射率材料的交替层叠的层（H）和低折射率材料的层（L）构成的镜面层，各自具有光学 λ/ 4的膜厚度和（2）间隔层，其各自被构造为高折射率材料的层（nH：n是整数）和低折射率层（nL：n是整数）的组合折射率材料各自具有λ/ 4的光学膜厚度，并且具有λ/ 2的整数倍的总光学膜厚度。

4. 发明授权

US5380511A Process for producing silicon carbide-base complex 失效
标题翻译：碳化硅基复合体的制造方法
公开(公告)号：US5380511A
公开(公告)日：1995-01-10
申请号：US89615
申请日：1993-07-12
申请人： Tadahisa Arahori , Shigetoshi Hayashi , Kazuhiro Minagawa
发明人： Tadahisa Arahori , Shigetoshi Hayashi , Kazuhiro Minagawa
IPC分类号： C04B35/573 , C01B31/36
CPC分类号： C04B35/573
摘要： A process for producing silicon carbide-base complex is disclosed. In the process of this invention, a silicon carbide-base complex is produced by means of depositing carbon produced by means of pyrolysis of a gas comprising a hydrocarbon or a hydrocarbon halide on a porous synthesized silica glass body. As a result, the process of manufacture according to the present invention is capable of producing a high purity and a high strength silicon carbide-base material, which is useful as a jig for producing semiconductors, for example, a heat resistance jig material such as a process tube for wafer boats used for heat doping operation.
摘要翻译：公开了一种生产碳化硅 - 基复合物的方法。在本发明的方法中，通过在多孔合成的石英玻璃体上沉积通过包含烃或烃卤化物的气体的热分解产生的碳来生产碳化硅 - 基配合物。结果，根据本发明的制造方法能够制造高纯度和高强度的碳化硅基材料，其可用作制造半导体的夹具，例如耐热夹具材料，例如用于热掺杂操作的晶片舟的加工管。

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