专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08842710B2 Process for producing semiconductor device and semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08842710B2
公开(公告)日：2014-09-23
申请号：US13058561
申请日：2010-07-27
申请人： Yasuhiro Nagatomo , Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima
发明人： Yasuhiro Nagatomo , Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima
IPC分类号： H01S3/08 , H01L21/02 , H01S5/20 , H01S5/12 , H01S5/323 , H01S5/10
CPC分类号： H01S5/1228 , H01L21/02389 , H01L21/02538 , H01L21/0254 , H01L21/02579 , H01L21/02667 , H01S5/1017 , H01S5/1231 , H01S5/2059 , H01S5/2095 , H01S5/32341
摘要： There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.
摘要翻译：提供了一种用于制造半导体器件和半导体器件的方法，其允许在不使难以进行离子注入的半导体的材料体系中即使在不使折射率分布的情况下形成导电性分布。制造半导体器件的方法包括以下步骤：形成含有掺杂剂的半导体层; 通过部分去除半导体层在半导体层上形成凹凸结构; 并且在形成半导体层的材料导致大量运输和填充的温度下对形成有凹凸结构的半导体层进行热处理，形成反映半导体层中的凹凸结构的导电率分布所述凹凸结构的凹部的孔与所述材料形成所述半导体层。

2. 发明申请

US20110237077A1 METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD 有权
标题翻译：生产氮化物半导体微结构的方法和根据方法制备的光子晶体
公开(公告)号：US20110237077A1
公开(公告)日：2011-09-29
申请号：US13002627
申请日：2010-07-27
申请人： Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
发明人： Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
IPC分类号： H01L21/263
CPC分类号： H01L29/2003 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L21/02667 , H01L29/045 , H01S5/105 , H01S5/2095 , H01S5/32341
摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
摘要翻译：制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。

3. 发明授权

US08885683B2 Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof 有权
标题翻译：用于形成氮化物半导体的微结构的工艺，使用二维光子晶体的表面发射激光及其制造方法
公开(公告)号：US08885683B2
公开(公告)日：2014-11-11
申请号：US13606419
申请日：2012-09-07
申请人： Katsuyuki Hoshino , Yasuhiro Nagatomo , Shoichi Kawashima , Takeshi Kawashima
发明人： Katsuyuki Hoshino , Yasuhiro Nagatomo , Shoichi Kawashima , Takeshi Kawashima
IPC分类号： H01S5/00
CPC分类号： G02B6/1225 , B82Y20/00 , G02B2006/12107 , G02B2006/12169 , G02B2006/12176 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/32 , H01L2933/0083 , H01S5/105 , H01S5/32341
摘要： A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.
摘要翻译：一种用于形成氮化物半导体的微结构的方法，包括（1）制备半导体结构，所述半导体结构具有由在由III族形成的第一半导体层的主平面上形成的至少包含Al的III族氮化物半导体形成的第二半导体层不含Al的氮化物半导体，其具有穿过第二半导体层并形成在第一半导体层中的孔; （2）在步骤（1）之后对包含氮元素的气体气氛进行半导体结构的热处理，以在孔的侧壁的至少一部分上形成不含Al的III族氮化物半导体的晶面 ; 以及（3）在步骤（2）之后，在所述第二半导体层上形成由III族氮化物半导体形成的第三半导体层以覆盖所述孔的上部。

4. 发明授权

US08791025B2 Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method 有权
标题翻译：根据该方法制备氮化物半导体和光子晶体微结构的方法
公开(公告)号：US08791025B2
公开(公告)日：2014-07-29
申请号：US13002627
申请日：2010-07-27
申请人： Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
发明人： Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
IPC分类号： H01L21/302
CPC分类号： H01L29/2003 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L21/02667 , H01L29/045 , H01S5/105 , H01S5/2095 , H01S5/32341
摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
摘要翻译：制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。

5. 发明申请

US20130163628A1 PROCESS FOR FORMING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR, SURFACE EMITTING LASER USING TWO-DIMENSIONAL PHOTONIC CRYSTAL AND PRODUCTION PROCESS THEREOF 有权
标题翻译：使用二维光子晶体形成氮化物半导体的微结构，表面发射激光的方法及其制备方法
公开(公告)号：US20130163628A1
公开(公告)日：2013-06-27
申请号：US13606419
申请日：2012-09-07
申请人： Katsuyuki Hoshino , Yasuhiro Nagatomo , Shoichi Kawashima , Takeshi Kawashima
发明人： Katsuyuki Hoshino , Yasuhiro Nagatomo , Shoichi Kawashima , Takeshi Kawashima
IPC分类号： H01L21/20 , H01S5/02 , H01L33/02
CPC分类号： G02B6/1225 , B82Y20/00 , G02B2006/12107 , G02B2006/12169 , G02B2006/12176 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/32 , H01L2933/0083 , H01S5/105 , H01S5/32341
摘要： A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.
摘要翻译：一种用于形成氮化物半导体的微结构的方法，包括（1）制备半导体结构，所述半导体结构具有由在由III族形成的第一半导体层的主平面上形成的至少包含Al的III族氮化物半导体形成的第二半导体层不含Al的氮化物半导体，其具有穿过第二半导体层并形成在第一半导体层中的孔; （2）在步骤（1）之后对包含氮元素的气体气氛进行半导体结构的热处理，以在孔的侧壁的至少一部分上形成不含Al的III族氮化物半导体的晶面 ; 以及（3）在步骤（2）之后，在所述第二半导体层上形成由III族氮化物半导体形成的第三半导体层以覆盖所述孔的上部。

6. 发明授权

US08129210B2 Manufacturing method of microstructure 有权
标题翻译：微观结构的制造方法
公开(公告)号：US08129210B2
公开(公告)日：2012-03-06
申请号：US12914939
申请日：2010-10-28
申请人： Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima , Yasuhiro Nagatomo
发明人： Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima , Yasuhiro Nagatomo
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02667 , H01S5/105 , H01S5/183 , H01S2304/04
摘要： A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.
摘要翻译：提供了能够高精度地生产GaN半导体中的深而窄的微结构的微结构的制造方法。用于在半导体中形成微结构的显微组织的制造方法具有在基板上形成第一GaN半导体层的第一步骤的结构，通过在形成的第一GaN半导体层上的蚀刻来形成第一孔的第二步骤以及在包括氮气的气体气氛下在850℃至950℃的温度下进行热处理的第一窄度和第三步骤，以形成第二狭缝，其中第一孔的直径 h形成为比基板的面内方向上的第一孔的直径窄。

7. 发明申请

US20110039364A1 MANUFACTURING METHOD OF MICROSTRUCTURE 有权
标题翻译：微结构的制造方法
公开(公告)号：US20110039364A1
公开(公告)日：2011-02-17
申请号：US12914939
申请日：2010-10-28
申请人： Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima , Yasuhiro Nagatomo
发明人： Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima , Yasuhiro Nagatomo
IPC分类号： H01L21/302 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02667 , H01S5/105 , H01S5/183 , H01S2304/04
摘要： A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.
摘要翻译：提供了能够高精度地生产GaN半导体中的深而窄的微结构的微结构的制造方法。用于在半导体中形成微结构的显微组织的制造方法具有在基板上形成第一GaN半导体层的第一步骤的结构，通过在形成的第一GaN半导体层上的蚀刻来形成第一孔的第二步骤以及在包括氮气的气体气氛下在850℃至950℃的温度下进行热处理的第一窄度和第三步骤，以形成第二狭缝，其中第一孔的直径 h形成为比基板的面内方向上的第一孔的直径窄。

8. 发明申请

US20110134956A1 PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于生产半导体器件和半导体器件的方法
公开(公告)号：US20110134956A1
公开(公告)日：2011-06-09
申请号：US13058561
申请日：2010-07-27
申请人： Yasuhiro Nagatomo , Takeshi Kawashima , Kalsuyuki Hoshino , Shoichi Kawashima
发明人： Yasuhiro Nagatomo , Takeshi Kawashima , Kalsuyuki Hoshino , Shoichi Kawashima
IPC分类号： H01S5/125 , H01L21/18
CPC分类号： H01S5/1228 , H01L21/02389 , H01L21/02538 , H01L21/0254 , H01L21/02579 , H01L21/02667 , H01S5/1017 , H01S5/1231 , H01S5/2059 , H01S5/2095 , H01S5/32341
摘要： There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.
摘要翻译：提供了一种用于制造半导体器件和半导体器件的方法，其允许在不使难以进行离子注入的半导体的材料体系中即使在不使折射率分布的情况下形成导电性分布。制造半导体器件的方法包括以下步骤：形成含有掺杂剂的半导体层; 通过部分去除半导体层在半导体层上形成凹凸结构; 并且在形成半导体层的材料导致大量运输和填充的温度下对形成有凹凸结构的半导体层进行热处理，形成反映半导体层中的凹凸结构的导电率分布所述凹凸结构的凹部的孔与所述材料形成所述半导体层。

9. 发明授权

US08855158B2 Two-dimensional photonic crystal surface emitting laser 有权
标题翻译：二维光子晶体表面发射激光器
公开(公告)号：US08855158B2
公开(公告)日：2014-10-07
申请号：US13820436
申请日：2011-09-14
申请人： Yasuhiro Nagatomo , Shoichi Kawashima
发明人： Yasuhiro Nagatomo , Shoichi Kawashima
IPC分类号： H01S5/00 , H01S5/10 , H01S5/34 , B82Y20/00 , H01S5/343 , H01S5/18 , H01S5/20
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/18 , H01S5/187 , H01S5/2009 , H01S5/34 , H01S5/34333 , H01S2301/185
摘要： Provided is a two-dimensional photonic crystal surface emitting laser that enables easy laser oscillation with two-dimensionally symmetric intensity distribution, using a photonic crystal of a lattice structure having different lengths of primitive translation vectors in plane, realized in a two-dimensional photonic crystal surface emitting laser including an active layer, and a two-dimensional photonic crystal having a two-dimensionally periodic refractive index profile disposed in a vicinity of the active layer. The two-dimensional photonic crystal has a lattice structure where two primitive translation vectors in plane have different lengths, a shape of a member forming lattice points included in a unit cell of the lattice structure has anisotropy with respect to directions of the two primitive translation vectors, and the anisotropy of the shape of the member permits a difference of a coupling coefficient to be smaller than a case where the shape of the member is isotropic.
摘要翻译：提供一种二维光子晶体表面发射激光器，其使用在平面中具有不同长度的原始平移矢量的晶格结构的光子晶体，能够容易地进行具有二维对称强度分布的激光振荡，在二维光子晶体包括有源层的表面发射激光器和具有设置在有源层附近的具有二维周期性折射率分布的二维光子晶体。二维光子晶体具有晶格结构，其中平面中的两个原始平移向量具有不同的长度，形成格子结构的单位单元中的晶格点的成员的形状相对于两个原始翻译矢量的方向具有各向异性，并且构件的形状的各向异性允许耦合系数的差异小于构件的形状各向同性的情况。

10. 发明授权

US08379685B2 Surface emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：US08379685B2
公开(公告)日：2013-02-19
申请号：US13284069
申请日：2011-10-28
申请人： Shoichi Kawashima , Yasuhiro Nagatomo
发明人： Shoichi Kawashima , Yasuhiro Nagatomo
IPC分类号： H01S3/098 , H01S5/00
CPC分类号： H01S5/105 , H01S5/125 , H01S5/18 , H01S5/32341 , H01S2301/14 , H01S2301/166
摘要： A surface emitting laser emitting a laser beam in a single transverse mode irrespective of an emission area while one-dimensionally aligning polarization of the output beam, including a two-dimensional photonic crystal, having resonance modes in directions of the primitive translation vector a1 and a2, lengths |a1| and |a2| of the primitive translation vectors a1 and a2 satisfied |a1|=p×(λ1/2neff1), |a2|=λ2/2neff2 described by a resonance wavelengths λ1 and λ2 in the resonance modes in the a1 and a2 directions, effective refractive indexes neff1 and neff2 determined by the resonance modes in the a1 and a2 directions, an integer p of 2 or more, the resonance wavelengths λ1 and λ2 satisfy λ2≦2×(neff2/(nout+neff2))×λ1 described by the effective refractive index neff2 and a refractive index nout of an external medium located out of the surface emitting laser.
摘要翻译：在与原始平移矢量a1和a2的方向上具有谐振模式的包括二维光子晶体的输出光束的一维排列极化的同时，以单一横向模式发射激光束的表面发射激光器，而不管发射区域，长度| a1 | 和| a2 | 在a1和a2方向的共振模式中，通过共振波长λ1和λ2描述的原始转换矢量a1和a2满足| a1 | = p×（λ1/ 2neff1），| a2 | =λ2/ 2neff2，有效折射率 neff1和neff2由a1和a2方向的谐振模式确定，整数p为2或更大，谐振波长λ1和λ2满足λ2＆nlE; 2×（neff2 /（nout + neff2））×λ1，由有效折射率指数neff2和位于表面发射激光器外部的外部介质的折射率nout。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式