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    • 3. 发明授权
    • Dry development method for a resist film and an apparatus therefor
    • 抗蚀剂膜的干式显影方法及其设备
    • US4806456A
    • 1989-02-21
    • US147590
    • 1988-01-21
    • Shinya Katoh
    • Shinya Katoh
    • B63B9/04B63B25/08B63B35/44G03F7/36G03C5/16
    • G03F7/36B63B9/04Y10S430/143
    • A negative type electron beam sensitive resist film of CMS (chloro-methyl poly-styrene) is developed in a dry environment without using a vacuum system. The resist film is selectively exposed to an electron beam to form a latent image of a desired pattern therein and, then, subjected to irradiation by deep UV having a spectral component of 2537 .ANG. or shorter in an oxidizing gas such as atmospheric air. The average thickness decrease speeds during the dry development are 12 .ANG./min and 300 .ANG./min respectively for the portions exposed and unexposed to the electron beam, revealing a contrast ratio of 100 to 4 in terms of the remaining resist film thickness. A film of PGMA (poly-glycidyl metha-acrylate), and other negative type electron beam sensitive resists, may also be developed by the same method.
    • CMS(氯甲基聚苯乙烯)的负型电子束敏感膜在不使用真空系统的干燥环境下显影。 抗蚀剂膜选择性地暴露于电子束以在其中形成期望图案的潜像,然后在诸如大气中的氧化气体中经受具有2537或更短的光谱分量的深UV的照射。 干式显影时的平均厚度减少速度分别为曝光和未暴露于电子束的部分分别为12安培/分钟和300安培/分钟,显示了剩余抗蚀剂膜厚度的对比度为100至4。 也可以通过相同的方法开发PGMA(聚缩水甘油基甲基丙烯酸酯)和其它负型电子束敏感抗蚀剂的膜。
    • 10. 发明授权
    • Display and method for repairing defects thereof
    • 修复缺陷的显示方法和方法
    • US07187423B2
    • 2007-03-06
    • US10968292
    • 2004-10-19
    • Kiyoshi OzakiTsuyoshi KamadaKunio MatsubaraShinya KatohYoshihisa TaguchiKatsushige AsadaShogo Hayashi
    • Kiyoshi OzakiTsuyoshi KamadaKunio MatsubaraShinya KatohYoshihisa TaguchiKatsushige AsadaShogo Hayashi
    • G02F1/13G02F1/1333G02F1/1345G09G3/36
    • G02F1/136259G02F2001/136263
    • It is an object of the invention to provide a display and a method for repairing defects of the same in which defects such as inter-layer short-circuits and short-circuits in a single that have occurred at steps for manufacturing the display can be easily repaired to provide a good product with a probability higher than that in the related art. Laser irradiation is carried out as a first cycle of laser irradiation by forming a slit S1 in a region where a drain bus line 220 completely covers a gate bus line 218 to form a cut portion longer than the width of the gate bus line 218 adjacent to an inter-layer short-circuit 290 such that it splits an intersecting portion of the drain bus line 220 into two parts as shown in FIG. 5b. Next, as shown in FIG. 5c, slits S2 and S3 are respectively used for second and third cycles of laser irradiation to cut the drain bus line 220 at both ends of the cut portion (indicated by S1), thereby isolating the inter-layer short-circuit 290 of the drain bus line 220.
    • 本发明的一个目的是提供一种用于修复缺陷的显示器和方法,其中可以容易地在制造显示器的步骤中发生的单层短路和短路等缺陷 修复以提供比现有技术更高的概率的良好产品。 通过在漏极总线220完全覆盖栅极总线218的区域中形成狭缝S1以形成比相邻的栅极总线218的宽度更长的切割部分,在激光照射的第一周期中进行激光照射 到层间短路290,使得其将漏极总线220的交叉部分分成两部分,如图3所示。 5 b。 接下来,如图1所示。 如图5c所示,狭缝S 2和S 3分别用于激光照射的第二和第三循环,以在切割部分的两端(由S 1表示)切断排出母线220,从而隔离层间短路 290的漏极总线220。