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1. 发明申请

US20050205886A1 Gallium-containing light-emitting semiconductor device and method of fabrication 审中-公开
标题翻译：含镓的发光半导体器件及其制造方法
公开(公告)号：US20050205886A1
公开(公告)日：2005-09-22
申请号：US11135236
申请日：2005-05-23
申请人： Hitoshi Murofushi , Shiro Takeda
发明人： Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01L21/18 , H01L21/22 , H01L29/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/40
CPC分类号： H01L33/387 , H01L21/182 , H01L21/2215 , H01L33/0079 , H01L33/20 , H01L33/405
摘要： An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive base-plate of doped silicon is then bonded to the reflective layer.
摘要翻译：一种LED，其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列，其中露出n型AlGaInP半导体材料的约束层之一。金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中，从而产生合金或混合的金和镓的欧姆接触区域阵列，其比光吸收更少它们的常规对应物，厚度为20至1000埃。在从发光半导体区域的表面除去过渡金属区域和金色区域之后，形成铝的反射层，以覆盖AlGaInP约束层的欧姆接触区域和露出的表面部分。然后将掺杂硅的导电基板接合到反射层。

2. 发明授权

US07087933B2 Light-emitting semiconductor device and method of fabrication 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US07087933B2
公开(公告)日：2006-08-08
申请号：US10987770
申请日：2004-11-12
申请人： Shiro Takeda , Hitoshi Murofushi
发明人： Shiro Takeda , Hitoshi Murofushi
IPC分类号： H01L29/22
CPC分类号： H01L33/0079 , H01L21/42 , H01L33/46
摘要： A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.
摘要翻译：发光二极管具有用于产生光的半导体区域。半导体区域是从半导体的第一主表面依次层叠两个互补层，n型半导体层，有源层，p型半导体层，另一互补层和欧姆接触层光从其发射的层朝向第二层。反射金属层经由透明层覆盖半导体区域的第二主表面，用于反射从半导体区域穿过透明层的光。透明层用于防止半导体区域和反射层在制造LED期间通过热处理而合金化。

3. 发明申请

US20060076565A1 Semiconductor light emitting element and fabrication method thereof 失效
公开(公告)号：US20060076565A1
公开(公告)日：2006-04-13
申请号：US11231071
申请日：2005-09-20
申请人： Hitoshi Murofushi , Shiro Takeda
发明人： Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/30 , H01L33/387 , H01L2933/0016
摘要： In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.

4. 发明授权

US07566576B2 Gallium-containing light-emitting semiconductor device and method of fabrication 失效
标题翻译：含镓的发光半导体器件及其制造方法
公开(公告)号：US07566576B2
公开(公告)日：2009-07-28
申请号：US12049614
申请日：2008-03-17
申请人： Hitoshi Murofushi , Shiro Takeda
发明人： Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01L21/00
CPC分类号： H01L33/387 , H01L21/182 , H01L21/2215 , H01L33/0079 , H01L33/20 , H01L33/405
摘要： An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive baseplate of doped silicon is then bonded to the reflective layer.
摘要翻译：一种LED，其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列，其中露出n型AlGaInP半导体材料的约束层之一。金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中，从而产生合金或混合的金和镓的欧姆接触区域阵列，其比光吸收更少它们的常规对应物，厚度为20至1000埃。在从发光半导体区域的表面除去过渡金属区域和金色区域之后，形成铝的反射层，以覆盖AlGaInP约束层的欧姆接触区域和暴露表面部分。然后将掺杂硅的导电基板接合到反射层。

5. 发明申请

US20080166828A1 GALLIUM-CONTAINING LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION 失效
标题翻译：含镓的发光半导体器件及其制造方法
公开(公告)号：US20080166828A1
公开(公告)日：2008-07-10
申请号：US12049614
申请日：2008-03-17
申请人： Hitoshi Murofushi , Shiro Takeda
发明人： Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L21/182 , H01L21/2215 , H01L33/0079 , H01L33/20 , H01L33/405
摘要： An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive baseplate of doped silicon is then bonded to the reflective layer.
摘要翻译：一种LED，其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列，其中露出n型AlGaInP半导体材料的约束层之一。金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中，从而产生合金或混合的金和镓的欧姆接触区域阵列，其比光吸收更少它们的常规对应物，厚度为20至1000埃。在从发光半导体区域的表面除去过渡金属区域和金色区域之后，形成铝的反射层，以覆盖AlGaInP约束层的欧姆接触区域和露出的表面部分。然后将掺杂硅的导电基板接合到反射层。

6. 发明申请

US20060113544A1 Semiconductor light-emitting device, method for manufacturing same, and linear light source 审中-公开
标题翻译：半导体发光元件及其制造方法以及线性光源
公开(公告)号：US20060113544A1
公开(公告)日：2006-06-01
申请号：US10538387
申请日：2003-11-28
申请人： Koji Otsuka , Hitoshi Murofushi , Shiro Takeda
发明人： Koji Otsuka , Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01S5/00 , H01L29/15
CPC分类号： G02B6/0096 , F21K9/61 , F21Y2115/10 , G02B6/001 , G02F1/133603 , G02F1/133605 , H01L33/483 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A semiconductor light-emitting device comprises an elongated light transmitter 2; a pair of metallic heat sinks 4 disposed at both ends 2a of light transmitter 2 in a perpendicular relation to light transmitter 2. A linear light source comprises an elongated light transmitter 2 having an irradiation surface 2e; semiconductor light-emitting elements 3 for respectively emitting light into light transmitter 2 from both ends 2a thereof; and half-mirrors 20 mounted in light transmitter 2 for reflecting light emitted from light-emitting elements 3 toward the outside of light transmitter 2 through irradiation surface 2e. With these semiconductor light-emitting device and linear light source, light from the semiconductor light-emitting element as a point light source can be transformed into a linear light with the generally uniform luminance.
摘要翻译：半导体发光器件包括细长的光发射器2; 一对金属散热器4，其设置在与光发射器2垂直的方向上的光发射器2的两端部2a处。线性光源包括具有照射表面2e的细长光发射器2; 半导体发光元件3，用于从其两端2a分别将光发射到光发射器2中; 以及安装在发光器2中的半反射镜20，用于通过照射表面2e将从发光元件3发射的光朝向光发射器2的外部反射。利用这些半导体发光器件和线性光源，来自作为点光源的半导体发光元件的光可以变换成具有大致均匀亮度的线性光。

7. 发明申请

US20060001032A1 Light-emitting semiconductor device and method of fabrication 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20060001032A1
公开(公告)日：2006-01-05
申请号：US11222369
申请日：2005-09-08
申请人： Hitoshi Murofushi , Hidekazu Aoyagi , Shiro Takeda , Yoshihiko Uchida
发明人： Hitoshi Murofushi , Hidekazu Aoyagi , Shiro Takeda , Yoshihiko Uchida
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/405 , H01L33/44
摘要： An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.
摘要翻译： LED包括包括用于产生光的有源层的半导体区域。阳极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。足够薄以允许光通过其中，欧姆接触层以开放图案形成，以留下半导体区域的第二主表面的暴露部分。在发光半导体区域和反射金属层之间插入透明的开放式抗合金层，覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射，而不是不存在抗合金化层。

8. 发明授权

US07560737B2 Semiconductor light emitting element and fabrication method thereof 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US07560737B2
公开(公告)日：2009-07-14
申请号：US11231071
申请日：2005-09-20
申请人： Hitoshi Murofushi , Shiro Takeda
发明人： Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/30 , H01L33/387 , H01L2933/0016
摘要： In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.
摘要翻译：在半导体发光元件中，在窗口层的上表面上形成具有圆柱形并分散的岛状的多个凸起部。接触电极形成在凸台的上表面上。在凹部中形成透明电介质膜。在透明电介质膜和接触电极上形成透明导体膜。

9. 发明授权

US07498609B2 Light-emitting semiconductor device of improved efficiency 有权
标题翻译：发光半导体器件效率提高
公开(公告)号：US07498609B2
公开(公告)日：2009-03-03
申请号：US11222369
申请日：2005-09-08
申请人： Hitoshi Murofushi , Hidekazu Aoyagi , Shiro Takeda , Yoshihiko Uchida
发明人： Hitoshi Murofushi , Hidekazu Aoyagi , Shiro Takeda , Yoshihiko Uchida
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/44
摘要： An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.
摘要翻译： LED包括包括用于产生光的有源层的半导体区域。阳极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。足够薄以允许光通过其中，欧姆接触层以开放图案形成，以留下半导体区域的第二主表面的暴露部分。在发光半导体区域和反射金属层之间插入透明的开放式抗合金层，覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射，而不是不存在抗合金化层。

10. 发明申请

US20050139842A1 Semiconductor light emitting element and fabrication method thereof 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20050139842A1
公开(公告)日：2005-06-30
申请号：US11023947
申请日：2004-12-27
申请人： Hitoshi Murofushi , Shiro Takeda
发明人： Hitoshi Murofushi , Shiro Takeda
IPC分类号： H01L27/15 , H01L33/14 , H01L33/30 , H01L33/40 , H01S5/00
CPC分类号： H01L33/44 , H01L33/56
摘要： Provided between a window layer and a protection layer is a light transmissive layer having a refraction index which is between the refraction indexes of the window layer and protection layer. The refraction index n2 of the light transmissive layer is, for example, within ±20% of the geometric average of the refraction indexes of the window layer and protection layer. The thickness T of the light transmissive layer satisfies {(λ/4n2)×(2m+1)−(λ/8n2)≦T≦(λ/4n2)×(2m+1)+(λ/8n2)} where λ represents the wavelength of emitted light and m represents a positive integer not smaller than 0.
摘要翻译：提供在窗口层和保护层之间的是具有在窗口层和保护层的折射率之间的折射率的透光层。透光层的折射率n 2 <2>例如在窗口层和保护层的折射率的几何平均值的±20％以内。透光层的厚度T满足{（λ/ 4n×2×）×（2m + 1） - （λ/ 8n2）= T（λ 其中λ表示发射光的波长，m表示不小于0的正整数，其中λ表示发射光的波长，m表示不小于0的正整数。

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