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    • 10. 发明授权
    • Method and apparatus for growing a single crystal in various shapes
    • 用于生长各种形状的单晶的方法和装置
    • US06428617B1
    • 2002-08-06
    • US09665304
    • 2000-09-19
    • Shiro SakuragiYutaka Taguchi
    • Shiro SakuragiYutaka Taguchi
    • C30B1316
    • C30B15/305C30B11/00C30B11/007C30B29/08C30B29/12
    • The apparatus is provided with a vessel 1 for accommodating a melt 3 of material sought to be crystallized, and heaters 2 disposed symmetrically on both sides of the vessel. The vessel 1 has an interior space whose front cross section is symmetrical in shape along a vertical center line. The heaters 2 heat the vessel to create a temperature distribution in the melt in which the upper part of the vessel 1 is at a higher temperature, and the lower part thereof is at a lower temperature. The temperature distribution causes symmetrical convection flows of the melt in such a manner that two flows each move up along the side walls of the interior space of the vessel 1 and meet with each other at the top of the interior space where the vertical center line runs, and move together down along the vertical center line toward the bottom of the interior space. A single crystal is formed as the temperature at the lower end of the vessel 1 is gradually lowered below the melting point of the material.
    • 该设备设置有用于容纳寻求结晶的材料的熔体3的容器1和对称地设置在容器两侧的加热器2。 容器1具有内部空间,其前横截面沿垂直中心线对称地形状。 加热器2加热容器以在熔体中产生温度分布,其中容器1的上部处于较高温度,并且其下部处于较低温度。 温度分布导致熔体的对称对流,使得两个流动沿着容器1的内部空间的侧壁向上移动并且在垂直中心线延伸的内部空间的顶部彼此相遇 ,沿着垂直中心线向内移动到内部空间的底部。 当容器1的下端的温度逐渐降低到材料的熔点以下时,形成单晶。