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    • 1. 发明授权
    • Printing apparatus
    • 印刷装置
    • US4946298A
    • 1990-08-07
    • US433432
    • 1989-11-08
    • Shinya OkaShigeru Mori
    • Shinya OkaShigeru Mori
    • B41J3/37B41J11/48B41J19/00
    • B41J11/48B41J19/00B41J3/37
    • A printing apparatus including a printing section defined between a platen and a printing head mounted for movement in parallel with the platen to convert information into printed form on a printing medium placed in the printing section. At least one pair of feed rollers is provided for feeding the printing medium to the printing section and at least one pair of discharge rollers is provided for discharging the printing medium from the printing section. The nip of the feed rollers are substantially flush with the printing section and the nip of the discharge rollers is substantially flush with the printing section. The printing apparatus includes two printing medium guide paths. The first guide path is curved for guiding the printing medium to the nip of the feed rollers. The second guide path extends straight toward the nip of the feed rollers. The second guide path is effective to feed a thick or inflexible printing medium to the printing section.
    • 一种打印装置,包括限定在压板和打印头之间的打印部分,打印头被安装成与压板平行移动,以将信息转换成打印形式的打印介质。 提供至少一对进给辊用于将打印介质供给到打印部分,并且提供至少一对排出辊以从打印部分排出打印介质。 进料辊的辊隙基本上与印刷部分齐平,并且排出辊的辊隙基本上与印刷部分齐平。 打印设备包括两个打印介质引导路径。 第一引导路径是弯曲的,用于将打印介质引导到进给辊的辊隙。 第二引导路径直接朝向进给辊的辊隙延伸。 第二引导路径有效地将厚或不灵活的打印介质供给到打印部分。
    • 2. 发明授权
    • Semiconductor device and method for manufacturing same
    • 半导体装置及其制造方法
    • US07981811B2
    • 2011-07-19
    • US12508888
    • 2009-07-24
    • Shigeru MoriTakahiro KorenariTadahiro MatsuzakiHiroshi Tanabe
    • Shigeru MoriTakahiro KorenariTadahiro MatsuzakiHiroshi Tanabe
    • H01L21/31
    • H01L29/78621H01L29/66757
    • A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
    • 在绝缘基板上形成基底层,以局部方式形成半导体层。 然后形成栅极绝缘膜以覆盖半导体层,并且栅极电极形成在栅极绝缘膜的一部分上。 然后通过栅极绝缘膜将杂质注入到半导体层中,形成源极区,漏极区和LDD区。 用稀氢氟酸蚀刻栅极绝缘膜。 然后形成电极保护绝缘膜以覆盖栅电极,并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。 因此,引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。