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    • 1. 发明申请
    • NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
    • 非电解电解质二次电池
    • US20130004827A1
    • 2013-01-03
    • US13535982
    • 2012-06-28
    • Shinya MiyazakiKazunori DonoueHitoshi Maeda
    • Shinya MiyazakiKazunori DonoueHitoshi Maeda
    • H01M10/05H01M2/16
    • H01M10/0525H01M2/0217H01M2/1653H01M2/166H01M2/1686H01M10/0585
    • Provided is a nonaqueous electrolyte secondary battery. The stacked electrode assembly contains positive electrode plates in which no positive electrode active material layer is formed on at least one side of the positive electrode substrate and negative electrode plates in which no negative electrode active material layer is formed on at least one side of the negative electrode substrate. Such positive electrode surfaces where no positive electrode active material layer is formed are opposed, with a separator interposed, to such negative electrode surfaces where no negative electrode active material layer is formed. The separator interposed between the positive electrode active material layers and negative electrode active material layers has a layer containing ceramic. The separator interposed between the surfaces where no positive electrode active material layer is formed and the surfaces where no negative electrode active material layer is formed has no layer containing ceramic.
    • 提供一种非水电解质二次电池。 叠层电极组件包括在正极基板的至少一侧上没有形成正极活性物质层的正极板和在负极板的至少一侧上不形成负极活性物质层的负极板 电极基板。 在其中没有形成正极活性物质层的这种正电极表面与隔膜插入到不形成负极活性物质层的这些负极表面上。 介于正极活性物质层和负极活性物质层之间的隔膜具有含陶瓷层。 插入在不形成正极活性物质层的表面之间的隔膜与不形成负极活性物质层的表面不具有含陶瓷。
    • 5. 发明授权
    • Semiconductor device and a process of manufacturing the same
    • 半导体装置及其制造方法
    • US5780870A
    • 1998-07-14
    • US723366
    • 1996-09-30
    • Hitoshi MaedaYukinori HiroseYuichi Yokoyama
    • Hitoshi MaedaYukinori HiroseYuichi Yokoyama
    • H01L21/302H01L21/306H01L21/3065H01L21/66H01L21/768H01L23/544H01L23/48H01L29/04
    • H01L22/20H01L22/34
    • A semiconductor device is provided for convenient checking of etching states of semiconductor layers, along with a process for its preparation, wherein a test layer is formed on the same wafer where a semiconductor product is manufactured, and concurrently with and under the same formation conditions as formation a target layer forming a part of the semiconductor product, wherein the test layer is formed on a first layer and on a second layer interposed between a portion of the test layer and the first layer, with one of the first and second layers having the same etching properties as the target layer and the other of the first and second layers having different etching characteristics from the target layer. After etching the test layer and target layer concurrently to form holes in each the amount of the etching of the holes can be measured by an electron microscope, and the amount of etching in the target layer of the semiconductor product is controlled from the state of the etching reaching to the lower layer, either the first or second layer, below the test layer.
    • 提供一种半导体器件,用于方便地检查半导体层的蚀刻状态,以及其制备方法,其中测试层形成在制造半导体产品的同一晶片上,并且与相同的形成条件 形成形成所述半导体产品的一部分的目标层,其中所述测试层形成在第一层上,并且在插入在所述测试层的一部分与所述第一层之间的第二层上,所述第一层和所述第二层中的一个具有 与目标层相同的蚀刻性能和与目标层具有不同蚀刻特性的第一和第二层中的另一个相同。 在通过电子显微镜测量每个蚀刻孔数的同时蚀刻测试层和目标层之后形成孔,并且半导体产品的目标层中的蚀刻量由 蚀刻到达测试层下方的第一层或第二层的下层。
    • 6. 发明授权
    • Stack type battery
    • 堆叠式电池
    • US08119277B2
    • 2012-02-21
    • US12232916
    • 2008-09-25
    • Yoshitaka ShinyashikiAtsuhiro FunahashiHitoshi MaedaMasayuki Fujiwara
    • Yoshitaka ShinyashikiAtsuhiro FunahashiHitoshi MaedaMasayuki Fujiwara
    • H01M2/26
    • H01M10/0413H01M2/18H01M2/22H01M2/266
    • A stack type battery has positive electrode current collector tabs (11) overlapped with each other and welded to a positive electrode current collector terminal (15), and negative electrode current collector tabs (12) overlapped with each other and welded to a negative electrode current collector terminal (16). The positive electrode current collector tabs (11) existing between the positive electrode plates (1) and an end part (15a) of the positive electrode current collector terminal (15) that is on the positive electrode plate (1) side are welded to each other and/or the negative electrode current collector tabs (12) existing between the negative electrode plates (2) and an end part (16a) of the negative electrode current collector terminal (16) that is on a negative electrode plate (2) side are welded to each other.
    • 堆叠型电池具有彼此重叠并焊接到正极集电器端子(15)的正极集电片(11),负极集电片(12)彼此重叠并焊接到负极电流 集电极端子(16)。 存在于正极板(1)和正极板(1)侧的正极集电体端子(15)的端部(15a)之间的正极集电体接头(11)焊接在每个 存在于负极板(2)和位于负极板(2)侧的负极集电体端子(16)的端部(16a)之间的负极集电体(12)和/ 彼此焊接。
    • 8. 发明授权
    • Method of producing a polyurethane foam molded article
    • 聚氨酯发泡成型体的制造方法
    • US07540985B2
    • 2009-06-02
    • US11302838
    • 2005-12-14
    • Masafumi NakamuraMasaru SuzukiHitoshi Maeda
    • Masafumi NakamuraMasaru SuzukiHitoshi Maeda
    • B29C44/06
    • B29C44/0461C08G18/7664C08G18/797C08G2101/0033Y10T428/249961
    • A method of producing a polyurethane molded article is provided, in which one molding machine which can provide distinctly polyisocyanate component(s) and two kinds of polyol components is used, and prior to completion of the feed of a first polyurethane mixture liquid containing a polyisocyanate and a polyol component without a blowing agent into a mold, a second polyurethane mixture liquid containing a polyisocyanate and a second polyol component with a blowing agent is fed into the mold. The method produces, in a single stage, a polyurethane foam molded article having the skin or high density portion selectively formed on portions of the molded article actually requiring them, where the proportions of the skin and the high density portion and the foamed core can be varied freely.
    • 提供了一种制备聚氨酯模塑制品的方法,其中使用可提供明显多异氰酸酯组分和两种多元醇组分的一个成型机,并且在完成含有多异氰酸酯的第一聚氨酯混合物液体之前, 将没有发泡剂的多元醇成分加入到模具中,将含有多异氰酸酯的第二聚氨酯混合液和具有发泡剂的第二多元醇成分进料到模具中。 该方法在单个阶段中产生具有选择性地形成在实际需要的模制品的部分上的皮肤或高密度部分的聚氨酯泡沫模制品,其中皮肤和高密度部分和发泡芯的比例可以是 随意变化
    • 9. 发明授权
    • Method for evaluating a semiconductor device
    • 用于评估半导体器件的方法
    • US6027949A
    • 2000-02-22
    • US850003
    • 1997-05-01
    • Hitoshi Maeda
    • Hitoshi Maeda
    • H01L21/66
    • H01L22/24Y10S438/977
    • A P-type silicon substrate (4) and an N-type diffusion layer region (6) are connected to aluminum electrodes (5 and 7), respectively. Respective sections of the P-type silicon substrate (4) and the N-type diffusion layer region (6) are exposed. The aluminum electrode (5) connected to the P-type silicon substrate (4) and a platinum electrode (1) are connected in common to a cathode of a DC power supply (3a) and the aluminum electrode (7) connected to the N-type diffusion layer region (6) is connected to an anode of the DC power supply (3a). A sample for evaluation is thus provided. Of this sample, the exposed sections of the P-type silicon substrate (4) and the N-type diffusion layer region (6) are dipped into a mixture (2) of hydrofluoric acid and alcohol, and a voltage not lower than a critical voltage is applied thereto by the DC power supply (3a). Thus, an evaluation of a form of a diffusion layer region in a semiconductor device is achieved with excellent reproducibility.
    • P型硅衬底(4)和N型扩散层区域(6)分别连接到铝电极(5和7)。 露出P型硅衬底(4)和N型扩散层区域(6)的各个部分。 连接到P型硅衬底(4)的铝电极(5)和铂电极(1)共同连接到直流电源(3a)的阴极和与N型电极连接的铝电极(7) 型扩散层区域(6)连接到直流电源(3a)的阳极。 因此提供了用于评估的样本。 在该样品中,将P型硅衬底(4)和N型扩散层区域(6)的暴露部分浸入氢氟酸和醇的混合物(2)中,并且电压不低于临界值 由直流电源(3a)施加电压。 因此,以优异的再现性实现对半导体器件中的扩散层区域的形式的评估。